This device consists of a housing (1) made of electrically insulating material, in which a fuse (6) is provided with at least one main fuse wire (7) located in its cavity. The main fuse wire (7) is electrically conductively connected at one end to at least one connecting pin (2) which is led out of the housing (1) and at the other end it is electrically conductively connected to at least one terminal (3) located in at least one cavity (4) formed in the housing (1). The shape of the connecting pin (2) is adapted for connection to the protected device.

An electronic installation device for controlling a load in an electrical circuit, which comprises a single or multi-layer printed circuit board arrangement with electrical components and conductor tracks and which comprises a load circuit and a control circuit. According to the invention, in order to provide an electronic installation device with protective devices against short-circuit and against overload and which are specific to devices, the load circuit and the control circuit are at least functionally coupled to one another, and the electronic installation device comprises a first overcurrent protection device for protection against short-circuit currents and a second overcurrent protection device for protection against overload currents.

In examples, a package comprises a semiconductor die having a device side and a bond pad on the device side, a conductive terminal exposed to an exterior of the package, and an electrical fuse. The electrical fuse comprises a conductive ball coupled to the bond pad, and a bond wire coupled to the conductive terminal. The bond wire is stitch-bonded to the conductive ball.

This description relates generally to semiconductor devices. A semiconductor device can include first and second conductive layers that can be positioned over a substrate, and at least one dielectric layer between the first and second conductive layers. The at least one dielectric layer can be positioned over at least a portion of the second conductive layer, and the first conductive layer can be positioned over a portion of the least one dielectric layer. The semiconductor device can further include a third conductive layer that can be positioned over the substrate and can be conductively connected to the second conductive layer and the substrate. The third conductive layer includes a fusible link.

A solid-state fuse device includes a switch a gate driver connected to the switch and configured to transition the switch from a closed state to an open state when at least one of an overcurrent measurement exceeds a predetermined overcurrent threshold or a voltage drop across the switch exceeds a predetermined saturation voltage threshold.

A power component includes two electric terminals, a component housing, a main component at least partially surrounded by the component housing, connected with the two terminals, and configured to carry a power current flowing between the two electric terminals, and a sensor and emitter unit which is configured to measure a value of a physical quantity (T, V, ΔV) characterizing an operating state of the main component, and to emit an electromagnetic signal, in which the measured value of the physical quantity is encoded. The sensor and emitter unit includes an antenna for emitting the electromagnetic signal which is spaced apart from the main component and arranged in, on and/or at the component housing.

An electronic device includes: a control terminal, which extends on a first face of a substrate; a first conduction terminal, which extends in the substrate at the first face of the substrate; a first insulating layer interposed between the control terminal and the first conduction terminal; a conductive path, which can be biased at a biasing voltage; and a protection element, coupled to the control terminal and to the conductive path, which forms an electrical connection between the control terminal and the conductive path and is designed to melt, and thus interrupt electrical connection, in the presence of a leakage current higher than a critical threshold between the control terminal and the first conduction terminal through the first insulating layer.

A sliding power contact and method includes a mobile load device connector and a socket. The mobile load device connector includes a non-current power pin having a first length, a current power pin having a second length less than the first length, a neutral pin, and a ground pin. The socket includes a non-current power contact configured to electrically couple with the non-current power pin, a current power contact configured to electrically couple with the current power pin, a neutral contact configured to electrically couple with the neutral pin, and a ground pin configured to electrically couple with the ground pin. An arc suppressor is directly coupled to at least one of the non-current power pin and the non-current power contact, wherein the arc suppressor, the non-current power pin and the non-current power contact form a current path between the current power pin and the current power contact.

Provided is a semiconductor device capable of detecting an abnormal state in which two fuses are both short-circuited or cut. The semiconductor device includes: a trimming circuit having a first fuse and a second fuse connected in series; a current source circuit configured to supply current to the trimming circuit; and a determination circuit configured to determine whether a connection state or disconnect state of the first fuse and the second fuse are abnormal or not based upon signals derived from an output signal of the trimming circuit.

A protection device comprises a first substrate, a second substrate, a fusible element and a heating element. The first substrate comprises a first surface, and the second substrate comprises a second surface facing the first surface. The fusible element is disposed on the first surface of the first substrate, and the heating element is disposed on the second surface of the second substrate and is disposed above the fusible element. When over-voltage or over-temperature occurs, the heating element heats up to blow the fusible element and thereby providing over-voltage and over-temperature protection.