A vacuum field-emission-transistor device, a drain comprised of either a metal or a semimetal material, a gate arranged adjacent to, but separated from, the drain, a source comprised of either a metal or a semimetal material adjacent to, but separated from the metal gate, and a void through the metal drain and the metal gate to expose the drain, wherein the distance between the drain and the source is shorter than a mean free path distance of electrons in air.

A vacuum field-emission-transistor device, a drain comprised of either a metal or a semimetal material, a gate arranged adjacent to, but separated from, the drain, a source comprised of either a metal or a semimetal material adjacent to, but separated from the metal gate, and a void through the metal drain and the metal gate to expose the drain, wherein the distance between the drain and the source is shorter than a mean free path distance of electrons in air.

The invention provides a power supply module and a charged particle beam device that are capable of reducing ripple noise. A high-voltage generation circuit 101 includes booster circuits CPa and CPb of two systems that are configured to be symmetrical to each other, and performs a boosting operation by using a capacitive element and a diode in the booster circuits CPa and CPb of the two systems. The high-voltage generation circuit is housed in a housing and a reference power supply voltage is applied thereto. A left electrode 102a is fixedly provided in the vicinity of one of the booster circuits CPa and CPb of the two systems in the housing, and a right electrode 102b is fixedly provided in the vicinity of the other of the booster circuits CPa and CPb of the two systems in the housing. A stray capacitance adjustment circuit 100a adjusts capacitance values of stray capacitances of the booster circuits CPa and CPb of the two systems by electrically controlling an electrical connection characteristic between the left electrode 102a and the reference power supply voltage 104 and an electrical connection characteristic between the right electrode 102b and the reference power supply voltage 104.

The invention provides a power supply module and a charged particle beam device that are capable of reducing ripple noise. A high-voltage generation circuit 101 includes booster circuits CPa and CPb of two systems that are configured to be symmetrical to each other, and performs a boosting operation by using a capacitive element and a diode in the booster circuits CPa and CPb of the two systems. The high-voltage generation circuit is housed in a housing and a reference power supply voltage is applied thereto. A left electrode 102a is fixedly provided in the vicinity of one of the booster circuits CPa and CPb of the two systems in the housing, and a right electrode 102b is fixedly provided in the vicinity of the other of the booster circuits CPa and CPb of the two systems in the housing. A stray capacitance adjustment circuit 100a adjusts capacitance values of stray capacitances of the booster circuits CPa and CPb of the two systems by electrically controlling an electrical connection characteristic between the left electrode 102a and the reference power supply voltage 104 and an electrical connection characteristic between the right electrode 102b and the reference power supply voltage 104.

A vacuum tube for amplifier circuit includes: a light incidence window that transmits signal light; a photoelectric conversion unit that converts the signal light transmitted through the light incidence window into photoelectrons; an output unit that has an anode, on which the photoelectrons are incident, and outputs a signal corresponding to the incident photoelectrons; and a grid electrode that is disposed in a path of the photoelectrons from the photoelectric conversion unit to the anode and controls the amount of photoelectrons incident on the anode.

A vacuum tube for amplifier circuit includes: a light incidence window that transmits signal light; a photoelectric conversion unit that converts the signal light transmitted through the light incidence window into photoelectrons; an output unit that has an anode, on which the photoelectrons are incident, and outputs a signal corresponding to the incident photoelectrons; and a grid electrode that is disposed in a path of the photoelectrons from the photoelectric conversion unit to the anode and controls the amount of photoelectrons incident on the anode.

A vacuum integrated electronic device has an anode region of conductive material; an insulating region on top of the anode region; a cavity extending through the insulating region and having a sidewall; and a cathode region. The cathode region has a tip portion extending peripherally within the cavity, adjacent to the sidewall of the cavity. The cathode region is formed by tilted deposition, carried out at an angle of 30-60 with respect to a perpendicular to the surface of device.

A vacuum integrated electronic device has an anode region of conductive material; an insulating region on top of the anode region; a cavity extending through the insulating region and having a sidewall; and a cathode region. The cathode region has a tip portion extending peripherally within the cavity, adjacent to the sidewall of the cavity. The cathode region is formed by tilted deposition, carried out at an angle of 30-60 with respect to a perpendicular to the surface of device.

A vacuum integrated electronic device has an anode region of conductive material; an insulating region on top of the anode region; a cavity extending through the insulating region and having a sidewall; and a cathode region. The cathode region has a tip portion extending peripherally within the cavity, adjacent to the sidewall of the cavity. The cathode region is formed by tilted deposition, carried out at an angle of 30-60 with respect to a perpendicular to the surface of device.

A vacuum integrated electronic device has an anode region of conductive material; an insulating region on top of the anode region; a cavity extending through the insulating region and having a sidewall; and a cathode region. The cathode region has a tip portion extending peripherally within the cavity, adjacent to the sidewall of the cavity. The cathode region is formed by tilted deposition, carried out at an angle of 30-60 with respect to a perpendicular to the surface of device.