A magnet system comprising: a supplied magnetic field producer configured for creating a supplied magnetic field (SMF) or a supplied radial electric field producer configured for creating a supplied radial electric field (SREF); and an electron gun positioned so as to fire electrons into the SMF or the SREF such that the electrons fired from the electron gun form an electron coil, wherein the electron coil creates a self-generated magnetic field (SGMF), wherein the electron coil is formed in a vacuum.

A magnet system comprising: a supplied magnetic field producer configured for creating a supplied magnetic field (SMF) or a supplied radial electric field producer configured for creating a supplied radial electric field (SREF); and an electron gun positioned so as to fire electrons into the SMF or the SREF such that the electrons fired from the electron gun form an electron coil, wherein the electron coil creates a self-generated magnetic field (SGMF), wherein the electron coil is formed in a vacuum.

A magnet system comprising: a supplied magnetic field producer configured for creating a supplied magnetic field (SMF) or a supplied radial electric field producer configured for creating a supplied radial electric field (SREF); and an electron gun positioned so as to fire electrons into the SMF or the SREF such that the electrons fired from the electron gun form an electron coil, wherein the electron coil creates a self-generated magnetic field (SGMF), wherein the electron coil is formed in a vacuum.

A magnet system comprising: a supplied magnetic field producer configured for creating a supplied magnetic field (SMF) or a supplied radial electric field producer configured for creating a supplied radial electric field (SREF); and an electron gun positioned so as to fire electrons into the SMF or the SREF such that the electrons fired from the electron gun form an electron coil, wherein the electron coil creates a self-generated magnetic field (SGMF), wherein the electron coil is formed in a vacuum.

A semiconductor device may include the following elements: a semiconductor substrate, an insulator positioned on the substrate, a source electrode positioned on the insulator, a drain electrode positioned on the insulator, a gate electrode positioned between the source electrode and the drain electrode, a hollow channel surrounded by the gate electrode and positioned between the source electrode and the drain electrode, a dielectric member positioned between the hollow channel and the gate electrode, a first insulating member positioned between the gate electrode and the source electrode, and a second insulating member positioned between the gate electrode and the drain electrode.

A semiconductor device may include the following elements: a semiconductor substrate, an insulator positioned on the substrate, a source electrode positioned on the insulator, a drain electrode positioned on the insulator, a gate electrode positioned between the source electrode and the drain electrode, a hollow channel surrounded by the gate electrode and positioned between the source electrode and the drain electrode, a dielectric member positioned between the hollow channel and the gate electrode, a first insulating member positioned between the gate electrode and the source electrode, and a second insulating member positioned between the gate electrode and the drain electrode.

A semiconductor device may include the following elements: a semiconductor substrate, an insulator positioned on the substrate, a source electrode positioned on the insulator, a drain electrode positioned on the insulator, a gate electrode positioned between the source electrode and the drain electrode, a hallow channel surrounded by the gate electrode and positioned between the source electrode and the drain electrode, a dielectric member positioned between the hollow channel and the gate electrode, a first insulating member positioned between the gate electrode and the source electrode, and a second insulating member positioned between the gate electrode and the drain electrode.

A semiconductor device may include the following elements: a semiconductor substrate, an insulator positioned on the substrate, a source electrode positioned on the insulator, a drain electrode positioned on the insulator, a gate electrode positioned between the source electrode and the drain electrode, a hallow channel surrounded by the gate electrode and positioned between the source electrode and the drain electrode, a dielectric member positioned between the hollow channel and the gate electrode, a first insulating member positioned between the gate electrode and the source electrode, and a second insulating member positioned between the gate electrode and the drain electrode.

A semiconductor device may include the following elements: a semiconductor substrate, an insulator positioned on the substrate, a source electrode positioned on the insulator, a drain electrode positioned on the insulator, a gate electrode positioned between the source electrode and the drain electrode, a hollow channel surrounded by the gate electrode and positioned between the source electrode and the drain electrode, a dielectric member positioned between the hollow channel and the gate electrode, a first insulating member positioned between the gate electrode and the source electrode, and a second insulating member positioned between the gate electrode and the drain electrode.