A method for manufacturing a microelectronic semiconductor device comprising the steps of: forming a trench in a body, the trench having side walls, a opening, and a bottom; forming a sacrificial layer in the trench; forming a recess in the sacrificial layer; forming a restriction structure between the sacrificial layer and the opening of the trench, defining a through hole for access to the sacrificial layer; completely removing the sacrificial layer through said through hole; and depositing a metal layer over the body, thus closing the opening of the trench and forming an electron-emission cathode tip.

A method for manufacturing a microelectronic semiconductor device comprising the steps of: forming a trench in a body, the trench having side walls, a opening, and a bottom; forming a sacrificial layer in the trench; forming a recess in the sacrificial layer; forming a restriction structure between the sacrificial layer and the opening of the trench, defining a through hole for access to the sacrificial layer; completely removing the sacrificial layer through said through hole; and depositing a metal layer over the body, thus closing the opening of the trench and forming an electron-emission cathode tip.

A lead-in electrode, of an orthogonal acceleration time-of-flight mass spectrometer, includes: a main body having an ion passing part and a first member including a main-body accommodating part that is a through-hole. One surface of the first member includes an extension part to define a position of one surface of the main body. A second member is attached to the first member. A through-hole is provided at a position of the second member. One surface of the second member includes a first area in contact with a surface opposite to the one surface of the first member and a second area located inside with respect to the first area. The second area is formed lower than a surface, of the first area, in contact with the surface opposite to the one surface. A lead-in electrode elastic member is disposed, in the second area, between the first member and second members.

A lead-in electrode, of an orthogonal acceleration time-of-flight mass spectrometer, includes: a main body having an ion passing part and a first member including a main-body accommodating part that is a through-hole. One surface of the first member includes an extension part to define a position of one surface of the main body. A second member is attached to the first member. A through-hole is provided at a position of the second member. One surface of the second member includes a first area in contact with a surface opposite to the one surface of the first member and a second area located inside with respect to the first area. The second area is formed lower than a surface, of the first area, in contact with the surface opposite to the one surface. A lead-in electrode elastic member is disposed, in the second area, between the first member and second members.

A nano-vacuum tube (NVT) transistor comprising a source having a knife edge, a drain, and a channel formed between the source and the drain, the channel having a width to provide a pseudo-vacuum in a normal atmosphere. The NVT transistor utilizing a space charge plasma formed at the knife edge within the channel.

A device for controlling electron flow is provided. The device comprises a cathode, an elongate electrical conductor embedded in a diamond substrate, an anode, and a control electrode provided on the substrate surface for modifying the electric field in the region of the end of the conductor. A method of manufacturing the device is also provided.

A device for controlling electron flow is provided. The device comprises a cathode, an elongate electrical conductor embedded in a diamond substrate, an anode, and a control electrode provided on the substrate surface for modifying the electric field in the region of the end of the conductor. A method of manufacturing the device is also provided.

A device for controlling electron flow is provided. The device comprises a cathode, an elongate electrical conductor embedded in a diamond substrate, an anode, and a control electrode provided on the substrate surface for modifying the electric field in the region of the end of the conductor. A method of manufacturing the device is also provided.

A device for controlling electron flow is provided. The device comprises a cathode, an elongate electrical conductor embedded in a diamond substrate, an anode, and a control electrode provided on the substrate surface for modifying the electric field in the region of the end of the conductor. A method of manufacturing the device is also provided.

A device for controlling electron flow is provided. The device comprises a cathode, an elongate electrical conductor embedded in a diamond substrate, an anode, and a control electrode provided on the substrate surface for modifying the electric field in the region of the end of the conductor. A method of manufacturing the device is also provided.