A method of forming a vertical metal-air transistor device is provided. The method includes forming a precursor stack with a stack template on the precursor stack on a substrate. The method further includes forming a bottom spacer on the substrate around the precursor stack, and depositing a liner casing on the precursor stack. The method further includes depositing a conductive gate layer on the bottom spacer and liner casing. The method further includes reducing the size of the stack template to form a template post on the precursor stack, and forming a stack cap on the template post and precursor stack.

A method of forming a vertical metal-air transistor device is provided. The method includes forming a precursor stack with a stack template on the precursor stack on a substrate. The method further includes forming a bottom spacer on the substrate around the precursor stack, and depositing a liner casing on the precursor stack. The method further includes depositing a conductive gate layer on the bottom spacer and liner casing. The method further includes reducing the size of the stack template to form a template post on the precursor stack, and forming a stack cap on the template post and precursor stack.

An X-ray generation device which can be efficiently used is provided. The X-ray generation device has an electron gun, a target unit, a tubular portion, a reflected electron detector, and a coil unit. The target unit includes a plurality of targets and a plurality of mark portions having a predetermined relationship with the targets, wherein each mark portion having a surface area larger than a surface area of the target when said target unit is viewed from a direction which is normal to principal faces of the target unit.

An X-ray generation device which can be efficiently used is provided. The X-ray generation device has an electron gun, a target unit, a tubular portion, a reflected electron detector, and a coil unit. The target unit includes a plurality of targets and a plurality of mark portions having a predetermined relationship with the targets, wherein each mark portion having a surface area larger than a surface area of the target when said target unit is viewed from a direction which is normal to principal faces of the target unit.