It is a CNT device (1) (carbon-metal structure) equipped with a carbon nanotube layer (2) (CNT layer 2; same hereafter) on a metal pedestal (4). The metal pedestal (4) is brazed to the CNT layer (2) with a brazing material layer (3) interposed therebetween. When manufacturing the CNT device (1), firstly, the CNT layer (2) is formed on a heat-resistant textured substrate (6). Next, the metal pedestal (4) is brazed to the CNT layer (2) that is on the heat-resistant textured substrate (6) with the brazing material layer (3) interposed therebetween. Then, the metal pedestal (4) (and the CNT layer 2) is peeled off the heat-resistant textured substrate (6) to transfer the CNT layer (2) from the heat-resistant textured substrate (6) to the metal pedestal (4).

It is a CNT device (1) (carbon-metal structure) equipped with a carbon nanotube layer (2) (CNT layer 2; same hereafter) on a metal pedestal (4). The metal pedestal (4) is brazed to the CNT layer (2) with a brazing material layer (3) interposed therebetween. When manufacturing the CNT device (1), firstly, the CNT layer (2) is formed on a heat-resistant textured substrate (6). Next, the metal pedestal (4) is brazed to the CNT layer (2) that is on the heat-resistant textured substrate (6) with the brazing material layer (3) interposed therebetween. Then, the metal pedestal (4) (and the CNT layer 2) is peeled off the heat-resistant textured substrate (6) to transfer the CNT layer (2) from the heat-resistant textured substrate (6) to the metal pedestal (4).

The emitter of the present invention includes a nanowire. The nanowire is formed from a hafnium carbide (HfC) single crystal, and at least an end portion of the hafnium carbide single crystal, from which electrons are to be emitted, is covered with hafnium oxide (HfO.sub.2). In the emitter, the thickness of the hafnium oxide may be 1 nm to 20 nm.

The emitter of the present invention includes a nanowire. The nanowire is formed from a hafnium carbide (HfC) single crystal, and at least an end portion of the hafnium carbide single crystal, from which electrons are to be emitted, is covered with hafnium oxide (HfO.sub.2). In the emitter, the thickness of the hafnium oxide may be 1 nm to 20 nm.

Disclosed is a method for manufacturing a field emitter, comprising: forming a primary epitaxial layer on a substrate; forming a plurality of secondary epitaxial structures on the primary epitaxial layer; forming an emitter electrode layer and a dielectric layer between the emitter electrode layer and the plurality of secondary epitaxial structures on the primary epitaxial layer; sequentially forming a protective layer, an insulating layer, a gate electrode layer and a planarization layer which are laminated on the dielectric layer and the plurality of secondary epitaxial structures; etching the planarization layer to expose part of the gate electrode layer on the dielectric layer and part of the secondary epitaxial structure; etching and removing the protective layer, the insulating layer and the exposed part of the gate electrode layer on part of the secondary epitaxial structure so as to expose part of the secondary epitaxial structure; forming a gate connection electrode layer on the exposed gate electrode layer on the dielectric layer; forming an anode opposite to the exposed part of the secondary epitaxial structure, the anode and the exposed part of the secondary epitaxial structure having a predetermined distance from each other. Further disclosed is a field emitter.