The present disclosure addresses the problem of providing an electron gun that can directly monitor an intensity of an electron beam emitted from a photocathode using only the configuration provided to the electron gun, an electron beam applicator equipped with an electron gun, and a method for controlling an electron gun.

The aforementioned problem can be solved by an electron gun comprising a light source, a photocathode that emits an electron beam in response to receiving light from the light source, an anode, an electron-beam-shielding member with which it is possible to shield part of the electron beam, and a measurement unit that measures the intensity of the electron beam emitted from the photocathode using a measurement electron beam shielded by the electron-beam-shielding member.

A photocathode including a substrate, a photoelectric conversion layer provided on the substrate and generating photoelectrons in response to incidence of light, and an underlayer provided between the substrate and the photoelectric conversion layer and containing beryllium, in which the underlayer has a first underlayer containing a nitride of beryllium.

A photocathode including a substrate, a photoelectric conversion layer provided on the substrate and generating photoelectrons in response to incidence of light, and an underlayer provided between the substrate and the photoelectric conversion layer and containing beryllium, in which the underlayer has a first underlayer containing a nitride of beryllium.

The present invention addresses the problem of providing a device with which it is possible to adjust the focal point of an electron beam both toward a shorter focal point and toward a longer focal point after an electronic gun was fitted on a counterpart device. The aforementioned problem can be solved by an electron gun including a photocathode, and an anode, the electron gun furthermore comprising an intermediate electrode disposed between the photocathode and the anode, the intermediate electrode comprising an electron-beam passage hole through which an electron beam released from the photocathode passes, and the electron-beam passage hole having formed therein a drift space in which, when an electrical field is formed between the photocathode and the anode due to application of a voltage, the effect of the electrical field can be disregarded.

The present invention addresses the problem of providing a device with which it is possible to adjust the focal point of an electron beam both toward a shorter focal point and toward a longer focal point after an electronic gun was fitted on a counterpart device.

The aforementioned problem can be solved by an electron gun including a photocathode, and an anode, the electron gun furthermore comprising an intermediate electrode disposed between the photocathode and the anode, the intermediate electrode comprising an electron-beam passage hole through which an electron beam released from the photocathode passes, and the electron-beam passage hole having formed therein a drift space in which, when an electrical field is formed between the photocathode and the anode due to application of a voltage, the effect of the electrical field can be disregarded.

A system for generating an electron beam array, comprising a light source, a first substrate having a plurality of plasmonic lenses mounted thereon, the plasmonic lenses configured to received light from the light source and produce an electron emission, and a plurality of electrostatic microlenses configured to focus the electron emissions into a beam for focusing on a wafer substrate. A light source modulator and digital micro mirror may be included which captures light from the light source and projects light beamlets on the plasmonic lenses.

A system for generating an electron beam array, comprising a light source, a first substrate having a plurality of plasmonic lenses mounted thereon, the plasmonic lenses configured to received light from the light source and produce an electron emission, and a plurality of electrostatic microlenses configured to focus the electron emissions into a beam for focusing on a wafer substrate. A light source modulator and digital micro mirror may be included which captures light from the light source and projects light beamlets on the plasmonic lenses.

A system for generating an electron beam array, comprising a light source, a first substrate having a plurality of plasmonic lenses mounted thereon, the plasmonic lenses configured to received light from the light source and produce an electron emission, and a plurality of electrostatic microlenses configured to focus the electron emissions into a beam for focusing on a wafer substrate. A light source modulator and digital micro mirror may be included which captures light from the light source and projects light beamlets on the plasmonic lenses.

This electron beam applicator includes: a light source; a photocathode; an anode; a detector; and a control unit. The photocathode receives two or more pulsed excitation light beams, and are emitted so that the excitation light beams are received by the photocathode at different timings, the control unit sets two or more irradiation regions and causes two or more pulsed electron beams formed in response to receiving the two or more pulsed excitation light beams of the different timings to be emitted to different irradiation regions, respectively, the detector generates detection signals by detecting, at different timings, pulsed emitted substances emitted from the different irradiation regions and outputs the generated detection signals in association with position information on the different irradiation regions, and the number of detectors is less than the number of electron beams emitted to the irradiation targets.