The invention relates to an electron source comprising a conductive substrate, a conductor disposed facing the substrate, the electron source emitting an electron beam when the conductor is positively biased with respect to the substrate, and an electrically insulating crystal arranged on the substrate, facing the conductor, the substrate defining with the crystal a void including at least one peak located at a distance from the crystal, the crystal having, in a plane parallel to the substrate, dimensions of less than 100 nm and a thickness of less than 50 nm.

Provided in the present disclosure is an electron emitting element 10 including a laminated structure in which a first electrode 1, an electron accelerating layer 6 made of an insulation film, a second electrode 3, and a cover film 7 are laminated in that order, in which the second electrode is an electrode which transmits electrons and emits electrons from a surface thereof, and the cover film is a film which transmits electrons, is a protective film made of a material different from that of the second electrode, and constitutes an electron emission surface 5.

The present disclosure relates to methods of fabricating electronic devices or components thereof. The electronic devices can be vacuum electronic devices. The methods can include disposing a first material on or in a substrate. The methods can further include removing a portion of the first material to form one or more structure protruding from the substrate. The methods can further include disposing a second material onto the one or more structure of the first material, and then removing a portion of the second material to form one or more sidewall structures. A second portion of the one or more structures of the first material can also be removed to form a fabricated structure including the substrate and one or more sidewall structures protruding therefrom.

An electron emission element of the present invention includes a lower electrode, a surface electrode, and a silicone resin layer disposed between the lower electrode and the surface electrode, wherein the surface electrode includes a silver layer, and the silver layer is in contact with the silicone resin layer.

Traveling-wave tube amplifiers for high-frequency signals, including terahertz signals, and methods for making a slow-wave structure for the traveling-wave tube amplifiers are provided. The slow-wave structures include helical conductors that are self-assembled via the release and relaxation of strained films from a sacrificial growth substrate.

In some embodiments, a self-aligned electrospray device can include a silicon wafer, a fluid reservoir, and a circuit. The silicon wafer can have a layer of electrically insulating material deposited on a top surface and a deposited layer of electrically conducting material. The silicon wafer and the deposited layers can have through holes. The electrically insulating layer may be undercut. The fluid reservoir can be mounted to a bottom surface of the silicon wafer for containing fluid. The circuit can provide an electric potential difference and be coupled between the layer of electrically conducting material and the fluid reservoir.

A method for making field emission devices so that they have emitter tips in the form of a needle-like point with a width and length configured such that ratio of the width to the length ranges from about 0.001 to about 0.05, and associated methods for making the tips by 3-D printing.

A method for making field emission devices so that they have emitter tips in the form of a needle-like point with a width and length configured such that ratio of the width to the length ranges from about 0.001 to about 0.05, and associated methods for making the tips by 3-D printing.

Processes for synthesizing the hexagonal polymorph of boron nitride (h-BN) produce h-BN of a grade that is highly suitable for ultraviolet (UV) field-emission lights and other UV applications.

Traveling-wave tube amplifiers for high-frequency signals, including terahertz signals, and methods for making a slow-wave structure for the traveling-wave tube amplifiers are provided. The slow-wave structures include helical conductors that are self-assembled via the release and relaxation of strained films from a sacrificial growth substrate.