An apparatus, system and method is provided for producing stacked wafers containing an array of image intensifiers that can be evacuated on a wafer scale. The wafer scale fabrication techniques, including bonding, evacuation, and compression sealing concurrently forms a plurality of EBCMOS imager anodes with design elements that enable high voltage operation with optional enhancement of additional gain via TMSE amplification. The TMSE amplification is preferably one or more multiplication semiconductor wafers of an array of EBD die placed between a photocathode within a photocathode wafer and an imager anode that is preferably an EBCMOS imager anode bonded to or integrated within an interconnect die within an interconnect wafer.

A charged particle gun for a charged particle beam device is described. The charged particle gun includes a gun housing; an emitter provided in the gun housing, the emitter being configured to emit a charged particle beam along an axis; an emitter power supply connected to the emitter; a trapping electrode provided in the gun housing, the trapping electrode at least partially surrounding the axis; a trapping power supply connected to the trapping electrode; and a shielding element shielding an electrostatic field of the trapping electrode from the axis during operation of the gun housing.

An apparatus, system and method is provided for producing stacked wafers containing an array of image intensifiers that can be evacuated on a wafer scale. The wafer scale fabrication techniques, including bonding, evacuation, and compression sealing concurrently forms a plurality of EBCMOS imager anodes with design elements that enable high voltage operation with optional enhancement of additional gain via TMSE amplification. The TMSE amplification is preferably one or more multiplication semiconductor wafers of an array of EBD die placed between a photocathode within a photocathode wafer and an imager anode that is preferably an EBCMOS imager anode bonded to or integrated within an interconnect die within an interconnect wafer.

A charged particle gun for a charged particle beam device is described. The charged particle gun includes a gun housing; an emitter provided in the gun housing, the emitter being configured to emit a charged particle beam along an axis; an emitter power supply connected to the emitter; a trapping electrode provided in the gun housing, the trapping electrode at least partially surrounding the axis; a trapping power supply connected to the trapping electrode; and a shielding element shielding an electrostatic field of the trapping electrode from the axis during operation of the gun housing.

A method of operating a charged particle gun is described. The method includes providing an emitter at a first emitter potential within the charged particle gun and providing a trapping electrode at a first electrode potential within the charged particle gun, wherein the first emitter potential and the first electrode potential is provided to have an electrical field of essentially zero at the emitter and at the trapping electrode; switching the trapping electrode from the first electrode potential to a second electrode potential different from the first electrode potential to generate an electrostatic trapping field at the trapping electrode; and after switching the trapping electrode from the first electrode potential to the second electrode potential, switching on an electrostatic emission field at the emitter.

A cathode for an X-ray tube, an X-ray tube, a system for X-ray imaging, and a method for an assembly of a cathode for an X-ray tube include a filament, a support structure, a body structure, and a filament frame structure. The filament is provided to emit electrons towards an anode in an electron emitting direction, and the filament at least partially includes a helical structure. Further, the filament is held by the support structure which is fixedly connected to the body structure. The filament frame structure is provided for electron-optical focusing of the emitted electrons, and the filament frame structure is provided adjacent to the outer boundaries of the filament. The filament frame structure includes frame surface portions arranged transverse to the emitting direction, and the filament frame structure is held by the support structure.