An apparatus, system and method is provided for producing stacked wafers containing an array of image intensifiers that can be evacuated on a wafer scale. The wafer scale fabrication techniques, including bonding, evacuation, and compression sealing concurrently forms a plurality of EBCMOS imager anodes with design elements that enable high voltage operation with optional enhancement of additional gain via TMSE amplification. The TMSE amplification is preferably one or more multiplication semiconductor wafers of an array of EBD die placed between a photocathode within a photocathode wafer and an imager anode that is preferably an EBCMOS imager anode bonded to or integrated within an interconnect die within an interconnect wafer.

A night vision system along with an image intensifier tube having a microchannel plate and method of forming the microchannel plate are provided. The microchannel plate comprises a plurality of spaced channels extending through the microchannel plate, wherein each channel sidewall surface near the input face of the microchannel plate comprises a series of layers formed thereon. The input face of the microchannel plate, as well as the sidewall surfaces of each channel near the input surfaces, are configured with an electron backscatter layer arranged between a contact metal layer and a secondary electron booster layer. When formed partially into the channel openings near the input face, the electron backscatter layer and overlying secondary electron booster layer are configured circumferentially around the sidewall surfaces and extend radially inward toward a central axis of each channel.

An apparatus, system and method is provided for producing stacked wafers containing an array of image intensifiers that can be evacuated on a wafer scale. The wafer scale fabrication techniques, including bonding, evacuation, and compression sealing concurrently forms a plurality of EBCMOS imager anodes with design elements that enable high voltage operation with optional enhancement of additional gain via TMSE amplification. The TMSE amplification is preferably one or more multiplication semiconductor wafers of an array of EBD die placed between a photocathode within a photocathode wafer and an imager anode that is preferably an EBCMOS imager anode bonded to or integrated within an interconnect die within an interconnect wafer.

A methodology, for night vision equipment, includes enabling an automatic brightness control (ABC) procedure for a light intensifier having a photocathode that automatically selects a voltage to be applied to the photocathode, sensing current being drawn by the anode, when the current being drawn by the anode exceeds a predetermined threshold, shutting down the photocathode, disabling the ABC procedure, and storing, as a stored voltage value, a value of a voltage that had been selected by the ABC procedure when the current exceeded the predetermined threshold. After a first predetermined period of time, applying a voltage to the photocathode in accordance with the stored voltage value, and after a second predetermined period of time re-enabling the ABC procedure and selecting the stored voltage value as the voltage to be applied to the photocathode.

A methodology, for night vision equipment, includes enabling an automatic brightness control (ABC) procedure for a light intensifier having a photocathode that automatically selects a voltage to be applied to the photocathode, sensing current being drawn by the anode, when the current being drawn by the anode exceeds a predetermined threshold, shutting down the photocathode, disabling the ABC procedure, and storing, as a stored voltage value, a value of a voltage that had been selected by the ABC procedure when the current exceeded the predetermined threshold. After a first predetermined period of time, applying a voltage to the photocathode in accordance with the stored voltage value, and after a second predetermined period of time re-enabling the ABC procedure and selecting the stored voltage value as the voltage to be applied to the photocathode.

Image intensifiers may include a photocathode that emits photoelectrons in proportion to the rate photons impact the photocathode. The photoelectrons are multiplied using a microchannel plate that includes a plurality of microchannels. Photoelectrons are scattered by the microchannel plate when the photoelectrons strike the surface of the microchannel plate rather than enter one of the microchannels. Electron scatter within an image intensifier results in a halo or bloom around bright or luminous objects. Halo or bloom may be minimized by reducing the electron scatter within the image intensifier. Deposition of an anti-scattering layer on the surface of the microchannel plate within the image intensifier can absorb photoelectrons that fail to enter a microchannel and may thus reduce the incidence of halo or bloom.

A night vision system along with an image intensifier tube having a microchannel plate and method of forming the microchannel plate are provided. The microchannel plate comprises a plurality of spaced channels extending through the microchannel plate, wherein each channel sidewall surface near the input face of the microchannel plate comprises a series of layers formed thereon. The input face of the microchannel plate, as well as the sidewall surfaces of each channel near the input surfaces, are configured with an electron backscatter layer arranged between a contact metal layer and a secondary electron booster layer. When formed partially into the channel openings near the input face, the electron backscatter layer and overlying secondary electron booster layer are configured circumferentially around the sidewall surfaces and extend radially inward toward a central axis of each channel.

A night vision system along with an image intensifier tube having a microchannel plate and method of forming the microchannel plate are provided. The microchannel plate comprises a plurality of spaced channels extending through the microchannel plate, wherein each channel sidewall surface near the input face of the microchannel plate comprises a series of layers formed thereon. The input face of the microchannel plate, as well as the sidewall surfaces of each channel near the input surfaces, are configured with an electron backscatter layer arranged between a contact metal layer and a secondary electron booster layer. When formed partially into the channel openings near the input face, the electron backscatter layer and overlying secondary electron booster layer are configured circumferentially around the sidewall surfaces and extend radially inward toward a central axis of each channel.

Image intensifiers may include a photocathode that emits photoelectrons in proportion to the rate photons impact the photocathode. The photoelectrons are multiplied using a microchannel plate that includes a plurality of microchannels. Photoelectrons are scattered by the microchannel plate when the photoelectrons strike the surface of the microchannel plate rather than enter one of the microchannels. Electron scatter within an image intensifier results in a halo or bloom around bright or luminous objects. Halo or bloom may be minimized by reducing the electron scatter within the image intensifier. Deposition of an anti-scattering layer on the surface of the microchannel plate within the image intensifier can absorb photoelectrons that fail to enter a microchannel and may thus reduce the incidence of halo or bloom.

A night vision system along with an image intensifier tube having a microchannel plate and method of forming the microchannel plate are provided. The microchannel plate comprises a plurality of spaced channels extending through the microchannel plate, wherein each channel sidewall surface near the input face of the microchannel plate comprises a series of layers formed thereon. The input face of the microchannel plate, as well as the sidewall surfaces of each channel near the input surfaces, are configured with an electron backscatter layer arranged between a contact metal layer and a secondary electron booster layer. When formed partially into the channel openings near the input face, the electron backscatter layer and overlying secondary electron booster layer are configured circumferentially around the sidewall surfaces and extend radially inward toward a central axis of each channel.