A method of manufacturing a multi-layer image intensifier wafer includes fabricating first and second glass wafers, each having an array of cavities that extend between respective openings in first and second surfaces of the respective glass wafer; doping a semiconductor wafer to generate a plurality of electrons for each electron that impinges a first surface of the semiconductor wafer and to direct the plurality of electrons to a second surface of the semiconductor wafer, bonding a photo-cathode wafer to the first glass wafer; bonding the semiconductor wafer between the first and second glass wafers, and bonding the second glass wafer between the semiconductor wafer and an anode wafer (e.g., a phosphor screen or other electron detector). A section of the multi-layer image intensifier wafer may be sliced and evacuated to provide a multi-layer image intensifier.

A novel photocathode employing a conduction band barrier is described. Incorporation of a barrier optimizes a trade-off between photoelectron transport efficiency and photoelectron escape probability. The barrier energy is designed to achieve a net increase in photocathode sensitivity over a specific operational temperature range.

A novel photocathode employing a conduction band barrier is described. Incorporation of a barrier optimizes a trade-off between photoelectron transport efficiency and photoelectron escape probability. The barrier energy is designed to achieve a net increase in photocathode sensitivity over a specific operational temperature range.

A device (1), such as a detector or imaging device, for detecting ultraviolet light, is described. The device comprises a housing (4) for a chamber. Disposed within the housing is a charge carrier multiplier structure (9) comprising a dielectric sheet (10) having first and second opposite faces (11, 12) and having an array of holes (16) traversing the dielectric sheet between the first and second faces. The device includes a photocathode (13) supported on the first face of the dielectric sheet, having a work function of less than 6 eV. The device includes an anode (14) supported on the second face of the dielectric sheet.