Provided is a particle beam apparatus capable of performing appropriate switching selectively between charged particle beam and neutral particle beam. A particle beam column (19) includes an ion source (41), a condenser lens (52), a charge exchange grid (55), and an objective lens (56). The ion source (41) generates ions. The condenser lens (52) changes focusing of the ion beam so that switching is performed between ion beam and neutral beam as particle beam with which a sample (S) is irradiated. The charge exchange grid (55) converts at least a part of ion beam into neutral particle beam through neutralization. The objective lens (56) is placed downstream of the charge exchange grid (55). The objective lens (56) reduces the ion beam toward the sample (S) when the sample (S) is irradiated with the neutral particle beam as the particle beam.

A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.

Provided is a particle beam apparatus capable of performing appropriate switching selectively between charged particle beam and neutral particle beam. A particle beam column (19) includes an ion source (41), a condenser lens (52), a charge exchange grid (55), and an objective lens (56). The ion source (41) generates ions. The condenser lens (52) changes focusing of the ion beam so that switching is performed between ion beam and neutral beam as particle beam with which a sample (S) is irradiated. The charge exchange grid (55) converts at least a part of ion beam into neutral particle beam through neutralization. The objective lens (56) is placed downstream of the charge exchange grid (55). The objective lens (56) reduces the ion beam toward the sample (S) when the sample (S) is irradiated with the neutral particle beam as the particle beam.

An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage including a component to deflect the ion beam, where the deceleration stage is disposed between the ion source and substrate stage. The ion implantation system may further include a hydrogen source to provide hydrogen gas to the deceleration stage, wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.

An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage including a component to deflect the ion beam, where the deceleration stage is disposed between the ion source and substrate stage. The ion implantation system may further include a hydrogen source to provide hydrogen gas to the deceleration stage, wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.

An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage including a component to deflect the ion beam, where the deceleration stage is disposed between the ion source and substrate stage. The ion implantation system may further include a hydrogen source to provide hydrogen gas to the deceleration stage, wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.

A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.

An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage including a component to deflect the ion beam, where the deceleration stage is disposed between the ion source and substrate stage. The ion implantation system may further include a hydrogen source to provide hydrogen gas to the deceleration stage, wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.