Systems and methods for reducing the buildup of charge during the investigation of samples using charged particle beams, according to the present disclosure include irradiating a first portion of a sample during a first time period, wherein the irradiating the first portion of the sample causes a gradual accumulation of net charge in the first portion of the sample, generating imaging data based on emissions resultant from irradiating the first portion of the sample, and then irradiating a second portion of a sample holder for a second time period. The methods may further includes iteratively repeating the irradiation of the first portion and the second portion during imaging of the sample region. When more than one region of interest on the sample is to be investigated, the method may also include continuing to image additional portions of the sample by iteratively irradiating a region of interest on the sample and a corresponding portion of the sample holder.

Systems and methods for reducing the buildup of charge during the investigation of samples using charged particle beams, according to the present disclosure include irradiating a first portion of a sample during a first time period, wherein the irradiating the first portion of the sample causes a gradual accumulation of net charge in the first portion of the sample, generating imaging data based on emissions resultant from irradiating the first portion of the sample, and then irradiating a second portion of a sample holder for a second time period. The methods may further includes iteratively repeating the irradiation of the first portion and the second portion during imaging of the sample region. When more than one region of interest on the sample is to be investigated, the method may also include continuing to image additional portions of the sample by iteratively irradiating a region of interest on the sample and a corresponding portion of the sample holder.

Surface imaging apparatuses, surface analysis apparatuses, methods based on detection of secondary electrons or secondary ions that include a spatially scanned and DC or pulsed primary excitation source resulting in secondary electrons or secondary ions which are detected and provide the modulated signal for imaging of the sample; and dual polarity flood beams to effect neutralization of surface charge and surface potential variation.

Surface imaging apparatuses, surface analysis apparatuses, methods based on detection of secondary electrons or secondary ions that include a spatially scanned and DC or pulsed primary excitation source resulting in secondary electrons or secondary ions which are detected and provide the modulated signal for imaging of the sample; and dual polarity flood beams to effect neutralization of surface charge and surface potential variation.

An ion beam neutralization system, often referred to as a plasma bridge neutralizer (PBN), as part of an ion beam (etch) system. The system utilizes an improved filament thermo-electron emitter PBN design, that when utilized in a particular method of operation, greatly extends filament life and minimizes variation in neutralizer operating parameters for long periods of operation. The PBN includes a solenoidal electromagnetic that produces an axial magnetic field within the PBN and a magnetic concentrator that facilitates the alignment of the magnetic field and inhibits stray fields. The PBN can readily provide a filament lifetime of at least 500 hours.

An ion implanter includes a plasma shower device configured to supply electrons to an ion beam with which a wafer is irradiated. The plasma shower device includes a plasma generating chamber provided with an extraction opening, a first electrode which is provided with an opening communicating with the extraction opening and to which a first voltage is applied with respect to an electric potential of the plasma generating chamber, a second electrode which is disposed at a position facing the first electrode such that the ion beam is interposed between the first and second electrodes and to which a second voltage is applied with respect to the electric potential of the plasma generating chamber, and a controller configured to independently control the first voltage and the second voltage to switch operation modes of the plasma shower device.

An ion implanter includes a plasma shower device configured to supply electrons to an ion beam with which a wafer is irradiated. The plasma shower device includes a plasma generating chamber provided with an extraction opening, a first electrode which is provided with an opening communicating with the extraction opening and to which a first voltage is applied with respect to an electric potential of the plasma generating chamber, a second electrode which is disposed at a position facing the first electrode such that the ion beam is interposed between the first and second electrodes and to which a second voltage is applied with respect to the electric potential of the plasma generating chamber, and a controller configured to independently control the first voltage and the second voltage to switch operation modes of the plasma shower device.

A plasma flood gun includes a filament to emit first electrons based on a first filament current induced in the filament to heat the filament to a first temperature at a first time. The first electrons interact with an inert gas in an arc plasma chamber to generate a first plasma. A filament resistance meter measures a first filament resistance of the filament, in-situ, during generation of the first plasma. A filament current source adjusts, based on the first filament resistance, the first filament current induced in the filament at the first time to a second filament current induced in the filament at a second time to generate a second plasma in the arc plasma chamber at the second time.

A plasma flood gun includes a filament to emit first electrons based on a first filament current induced in the filament to heat the filament to a first temperature at a first time. The first electrons interact with an inert gas in an arc plasma chamber to generate a first plasma. A filament resistance meter measures a first filament resistance of the filament, in-situ, during generation of the first plasma. A filament current source adjusts, based on the first filament resistance, the first filament current induced in the filament at the first time to a second filament current induced in the filament at a second time to generate a second plasma in the arc plasma chamber at the second time.