A plasma processing apparatus includes a microwave output unit, a wave guide tube, a tuner, a demodulation unit, and a calculation unit. The microwave output unit outputs a microwave having power corresponding to setting power while frequency-modulating the microwave in a setting frequency range. The wave guide tube guides the microwave to an antenna of a chamber main body. The tuner is provided in the wave guide tube and adjusts a position of a movable plate. The demodulation unit is provided in the wave guide tube, and acquires travelling wave power and reflected wave power for each frequency. The calculation unit calculates a frequency at which a reflection coefficient, which is calculated on the basis of the travelling wave power and the reflected wave power, for each frequency becomes a minimum point as an absorption frequency.

An ion implantation system includes an ion implanter containing an ion source unit and a dopant source gas supply system. The system includes a dopant source gas storage tank inside a gas box container located remotely to the ion implanter and a dopant source gas supply pipe configured to supply a dopant source gas from the dopant source gas storage tank to the ion source unit. The dopant source gas supply pipe includes an inner pipe, an outer pipe enclosing the inner pipe, a first pipe adaptor coupled to first end of respective inner and outer pipes, and a second pipe adaptor coupled to seconds end of respective inner and outer pipes opposite the first end. The first pipe adaptor connects the inner pipe to the dopant source gas storage tank and the second pipe adaptor connects the inner pipe to the ion source unit.

A plasma processing apparatus includes a chamber having a sidewall and a plasma processing space surrounded by the sidewall, and a first side gas inlet line and a second side gas inlet line configured to introduce at least one gas from the sidewall into the plasma processing space. The first side gas inlet line includes a plurality of first side gas injectors symmetrically arranged along a circumferential direction on the sidewall and configured to introduce the gas in a first direction into the plasma processing space. Further, the second side gas inlet line includes a plurality of second side gas injectors symmetrically arranged along the circumferential direction on the sidewall and configured to introduce the gas in a second direction different from the first direction into the plasma processing space.

An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.

The system described herein relates to a gas feed device having a first precursor reservoir that receives a first precursor and having a second precursor reservoir that receives a second precursor, a feed unit that feeds a gaseous state of the first precursor and/or a gaseous state of the second precursor onto a surface of an object. A first line device is arranged between the first precursor reservoir and the feed unit. A second line device is arranged between the second precursor reservoir and the feed unit. A first valve is arranged between the first line device and the feed unit. A second valve is arranged between the second line device and the feed unit. A control valve for the feed of the gaseous state of the first precursor and/or the gaseous state of the second precursor is connected to the first valve, the second valve and the feed unit.

Disclosed herein are apparatuses and systems for reentrant fluid delivery techniques. An example system includes at least a fluid delivery conduit extending between first and second electrical potentials, wherein the fluid delivery conduit is formed into a tilted helical so that a fluid flowing through the fluid delivery conduit experiences an electric field reversal through each winding of the fluid delivery conduit.

Disclosed herein are techniques directed toward a protective shutter for a charged particle microscope. An example apparatus at least includes a charged particle column and a focused ion beam (FIB) column, a gas injection nozzle coupled to a translation device, the translation device configured to insert the gas injection nozzle in close proximity to a stage, and a shutter coupled to the gas injection nozzle and arranged to be disposed between the sample and the SEM column when the gas injection nozzle is inserted in close proximity to the stage.

Described are various embodiments of an ion beam chamber fluid delivery system and method for delivering a fluid onto a substrate in an ion beam system during operation. In one embodiment, the system comprises: a chamber comprising an ion beam gun oriented so as to cause ions to impinge the substrate, said chamber having a fluid delivery conduit therein for delivering the fluid into the chamber; a transferable substrate stage for holding the substrate, the transferable stage further configured to move between an operating position and a payload position during non-operation, said payload position for receiving and removing said substrate; and a fluid delivery nozzle being in a fixed location relative to the transferable stage, at least during operation, with an outlet position that is configured to deliver a fluid to a predetermined location on said transferable stage.

A member for a plasma processing device of the present disclosure is a member for a plasma processing device made of ceramics and having a shape of a cylindrical body with a through hole in an axial direction. The ceramics is mainly composed of aluminum oxide, and has a plurality of crystal grains and a grain boundary phase that is present between the crystal grains. An inner peripheral surface of the cylindrical body has an arithmetic average roughness Ra of 1 μm or more and 3 μm or less, and an arithmetic height Rmax of 30 μm or more and 130 μm or less.

The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.