An ion implantation system includes an ion implanter containing an ion source unit and a dopant source gas supply system. The system includes a dopant source gas storage tank inside a gas box container located remotely to the ion implanter and a dopant source gas supply pipe configured to supply a dopant source gas from the dopant source gas storage tank to the ion source unit. The dopant source gas supply pipe includes an inner pipe, an outer pipe enclosing the inner pipe, a first pipe adaptor coupled to first end of respective inner and outer pipes, and a second pipe adaptor coupled to seconds end of respective inner and outer pipes opposite the first end. The first pipe adaptor connects the inner pipe to the dopant source gas storage tank and the second pipe adaptor connects the inner pipe to the ion source unit.

A plasma processing apparatus 100, which has an impact on global warming and allows for high-throughput plasma processing, includes a chamber 1 in which plasma is generated, a mounting table 2 disposed in the chamber, wherein a substrate S is mounted on the mounting table 2, and a gas supply source 3 (3a to 3d) for supplying gas for generating plasma in the chamber, wherein the substrate is subjected to deep etching by executing alternately and repeatedly an etching process S2 of etching the substrate by using plasma and a protective film deposition process S3 of depositing a protective film in a recess formed through the etching process by using plasma. It is characterized in that, in the protective film deposition process S3, a mixed gas of C.sub.4F.sub.8 and 2,3,3,3-tetrafluoropropene is supplied from the gas supply sources 3b, 3c into the chamber as gas supplied for generating plasma.

A drawing apparatus according to the embodiment includes a chamber configured to house a processing target; a drawing part configured to draw a predetermined pattern on the processing target with a charged particle beam; a resistance measuring part configured to measure a resistance value of the processing target via a grounding member grounding the processing target in the chamber; a receiver configured to receive earthquake information; a controller configured to stop a drawing process in the chamber when the receiver receives the earthquake information; and an arithmetic processor configured to determine whether the processing target is grounded on a basis of the resistance value from the resistance measuring part, wherein the controller resumes the drawing process when the arithmetic processor determines that the processing target is grounded after the drawing process is stopped.

Disclosed herein are techniques directed toward a protective shutter for a charged particle microscope. An example apparatus at least includes a charged particle column and a focused ion beam (FIB) column, a gas injection nozzle coupled to a translation device, the translation device configured to insert the gas injection nozzle in close proximity to a stage, and a shutter coupled to the gas injection nozzle and arranged to be disposed between the sample and the SEM column when the gas injection nozzle is inserted in close proximity to the stage.

A focus ring placement table includes an annular ceramic heater on which a focus ring is placed, a metal base, an adhesive element bonding the metal base and the ceramic heater, an inner-peripheral-side protective element disposed between the metal base and the ceramic heater and bonded to an inner peripheral portion of the adhesive element, and an outer-peripheral-side protective element disposed between the metal base and the ceramic heater and bonded to an outer peripheral portion of the adhesive element. A coefficient of thermal expansion of the adhesive element is equal to or smaller than a coefficient of thermal expansion of the inner-peripheral-side protective element and is equal to or greater than a coefficient of thermal expansion of the outer-peripheral-side protective element.

An ion implantation system including an ion implanter, a dopant source gas supply system and a monitoring system is provided. The ion implanter is inside a housing and includes an ion source unit. The dopant source gas supply system includes a first and a second dopant source gas storage cylinder in a gas cabinet outside of the housing and configured to supply a dopant source gas to the ion source unit, and a first and a second dopant source gas supply pipe coupled to respective first and second dopant source gas storage cylinders. Each of the first and second dopant source gas supply pipes includes an inner pipe and an outer pipe enclosing the inner pipe. The monitoring system is coupled to the outer pipe of each of the first and the second dopant source gas supply pipes.

A method for positioning a movable object in a sample chamber of a particle beam microscope is carried out with the aid of a flexible particle beam barrier. The particle beam microscope comprises at least one particle beam column for producing a beam of charged particles, and a sample chamber, a detector for detecting interaction signals and a control and evaluation unit. In the method, initially an object is provided in the sample chamber. Next, a barrier region is defined, which is subsequently scanned with the beam of charged particles. The interaction signals produced during the scan are detected. The object is moved towards the barrier region, wherein the detected interaction signals are monitored and signal changes are registered, with the result that it is possible to detect when the object moves into the barrier region or leaves the barrier region.

A lamella 10 including an analysis portion 11 and a cutout portion 12 separated from the analysis portion 11 is produced. When a plurality of the lamellae 10 are transported to a lamella grid 20, the plurality of lamellae 10 are supported by a support portion 22 protruding from a surface of a substrate 21, and are mounted adjacent to each other in a Z direction. At this time, the cutout portion 12 prevents the analysis portion 11 from damage.

A core insertion type spiral tube includes: a spiral metal tube having an empty space therein and an elastic core member positioned inside said spiral metal tube.

A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a portion that extends beyond the workpiece, referred to as a halo. The halo may be independently heated to compensate for etch rate non-uniformities. In some embodiments, the halo may be independently biased such that its potential is different from the potential applied to the workpiece. In certain embodiments, the halo may be divided into a plurality of thermal zones that can be separately controlled. In this way, various etch rate non-uniformities may be addressed by controlling the potential and/or temperature of the various thermal zones of the halo.