There is provided an ion milling apparatus that can enhance reproducibility of ion distribution.

The ion milling apparatus includes an ion source 101, a sample stage 102 on which a sample processed by radiating a non-convergent ion beam from the ion source 101 is placed, a drive unit 107 that moves a measurement member holding section 106 holding an ion beam current measurement member 105 along a track located between the ion source and the sample stage, and an electrode 112 that is disposed near the track, in which a predetermined positive voltage is applied to the electrode 112, the ion beam current measurement member 105 is moved within a radiation range of the ion beam by the drive unit 107, in a state in which the ion beam is output from the ion source 101 under a first radiation condition, and an ion beam current that flows when the ion beam is radiated to the ion beam current measurement member 105 is measured.

A method for evaluating a specimen, the method can include positioning an energy dispersive X-ray (EDX) detector at a first position; scanning a flat surface of the specimen by a charged particle beam that exits from a charged particle beam optics tip and propagates through an aperture of an EDX detector tip; detecting, by the EDX detector, x-ray photons emitted from the flat surface as a result of the scanning of the flat surface with the charged particle beam; after a completion of the scanning of the flat surface, positioning the EDX detector at a second position in which a distance between the EDX detector tip and a plane of the flat surface exceeds a distance between the plane of the flat surface and the charged particle beam optics tip; and wherein a projection of the EDX detector on the plane of the flat surface virtually falls on the flat surface when the EDX detector is positioned at the first position and when the EDX detector is positioned at the second position.

An ion beam extraction apparatus (100), being configured for creating an ion beam (1), in particular adapted for a neutral beam injection apparatus of a fusion plasma plant, comprises an ion source device (10) being arranged for creating ions, and a grid device (20) comprising at least two grids (21, 22) being arranged adjacent to the ion source device (10) and having a mutual grid distance d along a beam axis z, wherein the grids (21, 22) are electrically insulated relative to each other, the grids (21, 22) are arranged for applying different electrical potentials for creating an ion extraction and acceleration field (3) along the beam axis z, and he ion source device (10) and the grid device (20) are arranged in an evacuable ion beam space (30) extending along the beam axis z, wherein at least one of the grids is a movable grid (21), which can be shifted along the beam axis z, and the grid device (20) is coupled with a grid drive device (40) having a drive motor (41), which is arranged for moving the movable grid (21) along the beam axis z and setting the grid distance d between the movable grid (21) and another one of the grids (21, 22). Furthermore, applications of the ion beam extraction apparatus and a method of creating an ion beam along a beam axis z are disclosed.

A deposition apparatus including: a processing chamber; a rotary table provided in the processing chamber; a first processing region provided at a predetermined position in a circumferential direction of the rotary table; a second processing region provided downstream of the first processing region in the circumferential direction of the rotary table; a third processing region provided downstream of the second processing region in the circumferential direction of the rotary table; a first heater provided above the rotary table in the second processing region; and a plasma generator. The plasma generator includes: a protrusion having a longitudinally elongated shape in a planar view extending along a radius of the rotary table in a portion of an upper surface of the processing chamber, and protruding upward from the upper surface; and a coil wound along a side surface of the protrusion and has a longitudinally elongated shape in a planar view.

The disclosure relates to an electron-optical module of an electron-optical apparatus. The electron-optical module comprises a vacuum chamber, a high voltage shielding arrangement located within the vacuum chamber, and an aperture array configured to form a plurality of beamlets from an electron beam and located within the high voltage shielding arrangement. Wherein the electron-optical module can be configured to be removable from the electron-optical apparatus.

A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter. The wafer is heated to a temperature of more than 200° C. The wafer is a semiconductor wafer including SiC, and the ion beam includes aluminum ions.

There is provided a scanning electron microscope which has a sample chamber capable of being evacuated to a low vacuum. The scanning electron microscope includes an electron gun for emitting an electron beam, an objective lens for focusing the emitted beam onto a sample, and a sample chamber in which the sample is housed. The objective lens includes an inner polepiece, an outer polepiece disposed outside the inner polepiece and facing the sample chamber, at least one through-hole extending through the inner and outer polepieces, and at least one cover member that closes off the through-hole. An opening is formed between the inner polepiece and the outer polepiece. The objective lens causes leakage of magnetic field from the opening toward the sample. The sample chamber has a degree of vacuum lower than that in an inner space that forms an electron beam path inside the inner polepiece.

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.

Disclosed herein are techniques directed toward a protective shutter for a charged particle microscope. An example apparatus at least includes a charged particle column and a focused ion beam (FIB) column, a gas injection nozzle coupled to a translation device, the translation device configured to insert the gas injection nozzle in close proximity to a stage, and a shutter coupled to the gas injection nozzle and arranged to be disposed between the sample and the SEM column when the gas injection nozzle is inserted in close proximity to the stage.

The present disclosure generally relates to an isolation device for use in processing systems. The isolation device includes a body having a flow aperture formed therethrough. In one embodiment, the isolation device is disposed between a remote plasma source and a process chamber. A closure mechanism is pivotally disposed within the body. The closure mechanism can be actuated to enable or disable fluid communication between the remote plasma source and the process chamber. In one embodiment, the closure mechanism includes a shaft and a seal plate coupled to the shaft. A cross-arm is coupled to the shaft opposite the seal plate. The cross-arm is configured to selectively rotate the shaft and the seal plate of the closure mechanism.