To provide a charged particle beam device including a booster electrode and an object lens that generates a magnetic field in a vicinity of a sample, and capable of preventing ion discharge, an insulator is disposed between a magnetic field lens and the booster electrode. A tip of the insulator protrudes to a tip side of an upper magnetic path from a tip of a lower magnetic path of the magnetic field lens. The tip on a lower side of the insulator is above the lower magnetic path, and a non-magnetic metal electrode is embedded between the upper magnetic path and the lower magnetic path.

A particle beam device has a particle source, an extraction stop, an anode stop and a beam tube. A driver system of the particle beam device is configured to apply an electrical excitation stop potential to the extraction stop, to apply an electrical anode stop potential, able to be set in a variable manner, to the anode stop and to apply an electrical beam tube potential to the beam tube. A controller of the particle beam device is configured to control the driver system such that a voltage between the extraction stop and the anode stop is able to be set in a variable manner, as a result of which a current strength of the particle beam passing through the aperture of the anode stop is able to be set in a variable manner.

Disclosed herein are electron microscopes with improved imaging. An example electron microscope at least includes an illumination system, for directing a beam of electrons to irradiate a specimen, an elongate beam conduit, through which the beam of electrons is directed; a multipole lens assembly configured as an aberration corrector, and a detector for detecting radiation emanating from the specimen in response to said irradiation, wherein at least a portion of said elongate beam conduit extends at least through said aberration corrector and has a composite structure comprising intermixed electrically insulating material and electrically conductive material, wherein the elongate beam conduit has an electrical conductivity σ and a thickness t, with σt<0.1 Ω.sup.−1.

An electron beam system for wafer inspection and review of 3D devices provides a depth of focus up to 20 microns. To inspect and review wafer surfaces or sub-micron-below surface defects with low landing energies in hundreds to thousands of electron Volts, a Wien-filter-free beam splitting optics with three magnetic deflectors can be used with an energy-boosting upper Wehnelt electrode to reduce spherical and chromatic aberration coefficients of the objective lens.

Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive porous material. In some embodiments, an ion implanter may include a plurality of beam line components for directing an ion beam to a target, and a porous material along a surface of at least one of the plurality of beamline components.

A plasma processing apparatus comprising: a plasma processing chamber; a substrate support; and a baffle structure to surround the substrate support. The baffle structure includes an upper baffle plate having a plurality of first openings, each of the plurality of first openings having a first width, and a lower baffle plate having a plurality of second openings, each of the plurality of second openings having an upper opening portion and a lower opening portion. A liner structure surrounds a plasma processing space disposed above the substrate support, and includes an inner cylindrical liner and an outer cylindrical liner. The inner cylindrical liner has a plurality of third openings, each of the plurality of third openings having a fourth width. The outer cylindrical liner has a plurality of fourth openings, each of the plurality of fourth openings having an inner opening portion and an outer opening portion.

The embodiments disclosed herein are directed to systems, methods, and devices for processing a material using a microwave plasma apparatus with an interior liner. In some embodiments, the liner comprises a reduction resistant material layer in direct contact with a hydrogen-containing plasma of a plasma processing apparatus. In some embodiments, the liner may comprise a sleeve disposed between a plasma and one or more concentric tubes of a plasma processing apparatus. In some embodiments, the liner may comprise a coating of material applied to the one or more concentric tubes. In some embodiments, the liner may comprise a flexible ceramic material, such as a ceramic ribbon that is coiled or wrapped in a helix shape spiraling around the interior of the one or more concentric tubes.

An ion implantation system, including an ion source, and a buncher to receive a continuous ion beam from the ion source, and output a bunched ion beam. The buncher may include a drift tube assembly, having an alternating sequence of grounded drift tubes and AC drift tubes. The drift tube assembly may include a first grounded drift tube, arranged to accept a continuous ion beam, at least two AC drift tubes downstream to the first grounded drift tube, a second grounded drift tube, downstream to the at least two AC drift tubes. The ion implantation system may include an AC voltage assembly, coupled to the at least two AC drift tubes, and comprising at least two AC voltage sources, separately coupled to the at least two AC drift tubes. The ion implantation system may include a linear accelerator, comprising a plurality of acceleration stages, disposed downstream of the buncher.

An electron beam system for wafer inspection and review of 3D devices provides a depth of focus up to 20 microns. To inspect and review wafer surfaces or sub-micron-below surface defects with low landing energies in hundreds to thousands of electron Volts, a Wien-filter-free beam splitting optics with three magnetic deflectors can be used with an energy-boosting upper Wehnelt electrode to reduce spherical and chromatic aberration coefficients of the objective lens.

A multi-beam exposure device reducing variations of electron beam optical systems for electron beams, and preventing vacuum leakage. An exposure device is provided, including: a body tube depressurized to produce a vacuum state therein; multiple charged particle beam sources provided in the body tube, and emitting multiple charged particle beams in a direction of extension of the body tube; multiple electromagnetic optical elements, each provided corresponding to one of the multiple charged particle beams in the body tube, and controlling the one of the multiple charged particle beams; first and second partition walls arranged separately from each other in the direction of extension in the body tube, and forming a non-vacuum space between at least parts of the first and second partition walls; and a supporting unit provided in the body tube, and supporting the multiple electromagnetic optical elements for positioning of the multiple electromagnetic optical elements.