The present application discloses detector assembly for a charged particle assessment apparatus, the detector assembly comprising a plurality of electrode elements, each electrode element having a major surface configured to be exposed to signal particles emitted from a sample, wherein between adjacent electrode elements is a recess that is recessed relative to the major surfaces of the electrode elements, and wherein at least one of the electrode elements is a detection element configured to detect signal particles and the recess extends laterally behind the detection element. Charged particle assessment devices and apparatus, and corresponding methods are also provided.

Disclosed is an x-ray tube including a hybrid electron emission source, which uses, as an electron emission source, a cathode including both a field electron emission source and a thermal electron emission source. An x-ray tube includes an electron emission source emitting an electron beam, and a target part including a target material that emits an x-ray as the emitted electron beam collides with the target part, wherein the electron emission source includes a thermal electron emission source and a field electron emission source, and emits the electron beam by selectively using at least one of the thermal electron emission source and the field electron emission source.

An X-ray generation device which can be efficiently used is provided. The X-ray generation device has an electron gun, a target unit, a tubular portion, a reflected electron detector, and a coil unit. The target unit includes a plurality of targets and a plurality of mark portions having a predetermined relationship with the targets, wherein each mark portion having a surface area larger than a surface area of the target when said target unit is viewed from a direction which is normal to principal faces of the target unit.

One or more embodiments described herein generally relate to methods for chucking and de-chucking a substrate to/from an electrostatic chuck used in a semiconductor processing system. Generally, in embodiments described herein, the method includes: (1) applying a first voltage from a direct current (DC) power source to an electrode disposed within a pedestal; (2) introducing process gases into a process chamber; (3) applying power from a radio frequency (RF) power source to a showerhead; (4) performing a process on the substrate; (5) stopping application of the RF power; (6) removing the process gases from the process chamber; and (7) stopping applying the DC power.

An object of the present disclosure is to obtain an active gas generation apparatus capable of supplying a highly concentrated active gas from a gas ejection port to a processing space at a subsequent stage. Then, in the active gas generation apparatus (51) of the present disclosure, in a main dielectric space being a space in which an electrode dielectric film (30) and an electrode dielectric film (40) face each other, a region where electrode conductive films (31) and (41) overlap each other in a plan view is defined as a main discharge space (50). In an auxiliary dielectric space being a space where the electrode dielectric film 30 and a shield dielectric film 8 face each other, a region including a dielectric through hole (14) and a cover through hole (15) is defined as an auxiliary discharge space (58). The auxiliary discharge space (58) includes a part of a buffer space (9) above the shield dielectric film (8), and a path leading from the auxiliary discharge space (58) to the gas ejection port (61.62) is defined as an active gas flow path.

A tunable plasma exclusion zone in semiconductor fabrication is provided. A semiconductor wafer is provided within a chamber of a plasma processing apparatus between a first plasma electrode and a second plasma electrode. A plasma is generated from a process gas within the chamber and an electric field between the first plasma electrode and the second plasma electrode. The plasma is at least partially excluded from an edge region of the semiconductor wafer by a plasma exclusion zone (PEZ) ring within the chamber. The plasma may be tuned toward a center of the semiconductor wafer by electrically coupling an electrode ring of the PEZ ring to a voltage potential.

A cathode for an X-ray tube, an X-ray tube, a system for X-ray imaging, and a method for an assembly of a cathode for an X-ray tube include a filament, a support structure, a body structure, and a filament frame structure. The filament is provided to emit electrons towards an anode in an electron emitting direction, and the filament at least partially includes a helical structure. Further, the filament is held by the support structure which is fixedly connected to the body structure. The filament frame structure is provided for electron-optical focusing of the emitted electrons, and the filament frame structure is provided adjacent to the outer boundaries of the filament. The filament frame structure includes frame surface portions arranged transverse to the emitting direction, and the filament frame structure is held by the support structure.

Provided is a substrate processing apparatus. The positions of a first electrode and a second electrode are adjusted in advance in consideration of differences in coefficients of thermal expansion so that a short circuit created by contact between the first electrode and the second electrode is prevented even in the case in which the first electrode and the second electrode are thermally expanded during processing. Even in the case in which the first electrode and the second electrode are thermally expanded due to an increase in temperature during processing, a short circuit between the first electrode and the second electrode can be prevented, and the uniformity of a thin film can be maintained in the substrate processing apparatus for processing a large substrate.

A thickness of a bonding material (8) is varied in a radial direction orthogonal to a central axis (P) of the tubular anode member (6), the bonding material (8) being used for bonding a transmitting substrate (7) for supporting a target layer (9) and a tubular anode member (6) in a direction along the central axis (P). Thus, a region in which a circumferential tensile stress of the bonding material (8) is alleviated is formed in the direction along the central axis (P) to prevent a crack from developing in the bonding material (8).

Disclosed is an x-ray tube including a hybrid electron emission source, which uses, as an electron emission source, a cathode including both a field electron emission source and a thermal electron emission source. An x-ray tube includes an electron emission source emitting an electron beam, and a target part including a target material that emits an x-ray as the emitted electron beam collides with the target part, wherein the electron emission source includes a thermal electron emission source and a field electron emission source, and emits the electron beam by selectively using at least one of the thermal electron emission source and the field electron emission source.