An electrode arrangement for acting on a charged particle beam in a charged particle beam apparatus is described. The electrode arrangement includes a first electrode with a first opening for the charged particle beam; a first spacer element positioned in a first recess provided in the first electrode on a first electrode side for aligning the first electrode relative to a second electrode, the first spacer element having a first blind hole; a first conductive shield provided in the first blind hole; and a contact assembly protruding from the first electrode into the first blind hole for ensuring an electrical contact between the first electrode and the first conductive shield. Further, a contact assembly for such an electrode arrangement, a charged particle beam device with such an electrode arrangement, as well as a method of reducing an electrical field strength in an electrode arrangement are described.

A tunable plasma exclusion zone in semiconductor fabrication is provided. A semiconductor wafer is provided within a chamber of a plasma processing apparatus between a first plasma electrode and a second plasma electrode. A plasma is generated from a process gas within the chamber and an electric field between the first plasma electrode and the second plasma electrode. The plasma is at least partially excluded from an edge region of the semiconductor wafer by a plasma exclusion zone (PEZ) ring within the chamber. The plasma may be tuned toward a center of the semiconductor wafer by electrically coupling an electrode ring of the PEZ ring to a voltage potential.

Provided is a substrate processing apparatus. The positions of a first electrode and a second electrode are adjusted in advance in consideration of differences in coefficients of thermal expansion so that a short circuit created by contact between the first electrode and the second electrode is prevented even in the case in which the first electrode and the second electrode are thermally expanded during processing. Even in the case in which the first electrode and the second electrode are thermally expanded due to an increase in temperature during processing, a short circuit between the first electrode and the second electrode can be prevented, and the uniformity of a thin film can be maintained in the substrate processing apparatus for processing a large substrate.

The present invention provides an electron microscope and an observation method capable of observing secondary electrons in the atmosphere. In detail, a charged particle microscope of the invention includes: a partition wall that separates a non-vacuum space in which a sample is loaded from a vacuum space inside a charged particle optical lens barrel; an upper electrode; a lower electrode on which the sample is loaded; a power supply for applying a voltage to at least one of the upper electrode and the lower electrode; a sample gap adjusting mechanism for adjusting a gap between the sample and the partition wall; and an image forming unit for forming an image of the sample based on the current absorbed by the lower electrode. The secondary electrons are selectively measured by using an amplification effect due to ionization collision between electrons and gas molecules generated when a voltage is applied between the upper electrode and the lower electrode. As a detection method, a method is used which measures a current value flowing in a substrate.

A thickness of a bonding material (8) is varied in a radial direction orthogonal to a central axis (P) of the tubular anode member (6), the bonding material (8) being used for bonding a transmitting substrate (7) for supporting a target layer (9) and a tubular anode member (6) in a direction along the central axis (P). Thus, a region in which a circumferential tensile stress of the bonding material (8) is alleviated is formed in the direction along the central axis (P) to prevent a crack from developing in the bonding material (8).

A charged particle beam device for inspecting a specimen is described. The charged particle beam device includes a beam source for emitting a charged particle beam, an electrode for influencing the charged particle beam, and a damping unit provided on the electrode for damping vibrations of the electrode. Further, an objective lens module with an electrode is described, wherein a damping unit is provided on the electrode. Further, an electrode device is described, wherein a mass damper is mounted on a disk-shaped electrode body of the electrode device.

A charged particle beam device for inspecting a specimen is described. The charged particle beam device includes a beam source for emitting a charged particle beam, an electrode for influencing the charged particle beam, and a damping unit provided on the electrode for damping vibrations of the electrode. Further, an objective lens module with an electrode is described, wherein a damping unit is provided on the electrode. Further, an electrode device is described, wherein a mass damper is mounted on a disk-shaped electrode body of the electrode device.

One or more embodiments described herein generally relate to methods for chucking and de-chucking a substrate to/from an electrostatic chuck used in a semiconductor processing system. Generally, in embodiments described herein, the method includes: (1) applying a first voltage from a direct current (DC) power source to an electrode disposed within a pedestal; (2) introducing process gases into a process chamber; (3) applying power from a radio frequency (RF) power source to a showerhead; (4) performing a process on the substrate; (5) stopping application of the RF power; (6) removing the process gases from the process chamber; and (7) stopping applying the DC power.

The present disclosure provides a charged particle optical device for a charged particle system. The device projects an array of charged particle beams towards a sample. The device comprises a control lens array to control a parameter of the array of beams; and an objective lens array to project the array of beams onto the sample, the objective lens array being down beam of the control lens. The objective lens array comprises: an upper electrode; and a lower electrode arrangement that comprises an up-beam electrode and a down-beam electrode. The device is configured to apply an upper potential to the upper electrode, an up-beam potential to the up-beam electrode and a down-beam potential to the down-beam electrode. The potentials are controlled to control the landing energy of the beams on the sample and. to maintain focus of the beams on the sample at the landing energies.

A method of sustained self-sputtering of lithium in a sputtering station having a lithium metal target, the method comprising initiating a lithium sputtering reaction in the sputtering station by igniting an initial plasma comprising a majority fraction of inert gas ions and inducing a sustained lithium self-sputtering reaction by reducing supply of an inert gas to the sputtering station under conditions that provide a sustained self-sputtering lithium plasma comprising a majority fraction of lithium ions.