Ion implantation systems and methods implant varying energies of an ion beam across a workpiece in a serial single-workpiece end station, where electrodes of an acceleration/deceleration stage, bend electrode and/or energy filter control a final energy or path of the ion beam to the workpiece. The bend electrode or an energy filter can form part of the acceleration/deceleration stage or can be positioned downstream. A scanning apparatus scans the ion beam and/or the workpiece, and a power source provides varied electrical bias signals to the electrodes. A controller selectively varies the electrical bias signals concurrent with the scanning of the ion beam and/or workpiece through the ion beam based on a desired ion beam energy at the workpiece. A waveform generator can provide the variation and synchronize the electrical bias signals supplied to the acceleration/deceleration stage, bend electrode and/or energy filter.

Embodiments presented provide for a distributed ground single antenna ion source used in scientific experimentation.

An ion implanter may include an ion source, arranged to generate a continuous ion beam, a DC acceleration system, to accelerate the continuous ion beam, as well as an AC linear accelerator to receive the continuous ion beam and to output a bunched ion beam. The ion implanter may also include an energy spreading electrode assembly, to receive the bunched ion beam and to apply an RF voltage between a plurality of electrodes of the energy spreading electrode assembly, along a local direction of propagation of the bunched ion beam.

Embodiments presented provide for a distributed ground single antenna ion source used in scientific experimentation

The charged particle beam apparatus includes: a charged particle source configured to generate charged particles; a plurality of scanning electrodes configured to generate electric fields for deflecting charged particles that are emitted by applying an acceleration voltage to the charged particle source, and applying an extraction voltage to an extraction electrode configured to extract the charged particles; an electrostatic lens, which is provided between the plurality of scanning electrodes and a sample table, and is configured to focus a charged particle beam deflected by the plurality of scanning electrodes; and a processing unit configured to obtain a measurement condition, and set each of scanning voltages to be applied to the plurality of scanning electrodes based on the obtained measurement condition.

An ion implantation system, including an ion source, and a buncher to receive a continuous ion beam from the ion source, and output a bunched ion beam. The buncher may include a drift tube assembly, having an alternating sequence of grounded drift tubes and AC drift tubes. The drift tube assembly may include a first grounded drift tube, arranged to accept a continuous ion beam, at least two AC drift tubes downstream to the first grounded drift tube, a second grounded drift tube, downstream to the at least two AC drift tubes. The ion implantation system may include an AC voltage assembly, coupled to the at least two AC drift tubes, and comprising at least two AC voltage sources, separately coupled to the at least two AC drift tubes. The ion implantation system may include a linear accelerator, comprising a plurality of acceleration stages, disposed downstream of the buncher.

A method of doping a wafer includes implanting ions into a wafer by irradiating the wafer with an ion beam using an implantation device. The implantation device includes a filter frame and a filter held by the filter frame, wherein the filter is irradiated by the ion beam passing through the filter to the wafer, and the filter is arranged such that protruding microstructures of the filter face away from the wafer and towards the ion beam.

Methods and apparatus for inspecting features on a substrate including exposing at least a portion of the substrate to a first electron beam landing energy to obtain a first image; exposing the at least a portion of the substrate to a second electron beam landing energy to obtain a second image, wherein the second electron beam landing energy is different from the first electron beam landing energy; realigning the first image and the second image to a feature on the substrate; and determining from at least one measurement from the first image associated with the feature and at least one measurement from the second image associated with the feature if the feature is leaning or twisting.

An immersion objective lens is configured below a stage such that multiple detectors can be configured above sample for large beam current application, particularly for defect inspection. Central pole piece of the immersion objective lens thus can be provided that a magnetic monopole-like field can be provided for electron beam. Auger electron detector thus can be configured to analyze materials of sample in the defect inspection.

A particle beam system includes first and second particle beam columns. In a first operating mode, an end cap having an opening therein is outside a beam path of a first particle beam. In a second operating mode, the beam path of the first particle beam can extend through the opening of the end cap so that secondary particles coming from a work region can pass through the opening of the end cap to a detector in the interior of the first particle beam column. While the particle beam system is in the first operating mode, an image of an object arranged in the work region is recorded using the first particle beam column. While the particle beam system is in the second operating mode, the object is processed using a second particle beam.