An ion implantation system and method that selectively varies an ion beam energy to a workpiece in sequential passes thereof in front of the beam. The implantation system has an ion source for generating the ion beam and an acceleration/deceleration stage for varying the energy of the ion beam based on an electrical bias supplied to the acceleration deceleration stage. A workpiece support is provided immediately downstream of the acceleration/deceleration stage to support a workpiece through the selectively varied energy ion beam, and can be thermally controlled to control a temperature of the workpiece during the variation of energy of the beam. The energy can be varied while the workpiece is positioned in front of the beam, and a controller can control the electrical bias to control the variation in energy of the ion beam, where a plurality of process recipes can be attained during a single positioning of the workpiece on the workpiece support.

The present invention relates to a monochromator device. The monochromator device includes a first radiofrequency cavity positioned to receive an output beam from an electron source. A second radiofrequency cavity is positioned to receive the output beam from the first radiofrequency cavity. The first radiofrequency cavity and the second radiofrequency cavity are configured to, in combination, in combination, correct one or more energy deviations in time and space of the output beam.

For an electron beam system, a Wien filter is in the path of the electron beam between a transfer lens and a stage. The system includes a ground electrode between the Wien filter and the stage, a charge control plate between the ground electrode and the stage, and an acceleration electrode between the ground electrode and the charge control plate. The system can be magnetic or electrostatic.

An ion implanter may include an ion source, arranged to generate a continuous ion beam, a DC acceleration system, to accelerate the continuous ion beam, as well as an AC linear accelerator to receive the continuous ion beam and to output a bunched ion beam. The ion implanter may also include an energy spreading electrode assembly, to receive the bunched ion beam and to apply an RF voltage between a plurality of electrodes of the energy spreading electrode assembly, along a local direction of propagation of the bunched ion beam.

A method of producing an implantation ion energy filter, suitable for processing a power semiconductor device. In one example, the method includes creating a preform having a first structure; providing an energy filter body material; and structuring the energy filter body material by using the preform, thereby establishing an energy filter body having a second structure.

The focused ion beam apparatus includes: an ion source configured to generate ions; a first electrostatic lens configured to accelerate and focus the ions to form an ion beam; a beam booster electrode configured to accelerate the ion beam to a higher level; one or a plurality of electrodes, which are placed in the beam booster electrode, and are configured to electrostatically deflect the ion beam; a second electrostatic lens, which is provided between the one or plurality of electrodes and a sample table, and is configured to focus the ion beam applied with a voltage; and a processing unit configured to obtain a measurement condition, and set at least one of voltages to be applied to the one or plurality of electrodes or a voltage to be applied to each of the first electrostatic lens and the second electrostatic lens, based on the obtained measurement condition.

An ion implantation method includes changing an ion acceleration energy and/or an ion beam current density of an ion beam while effecting a relative movement between a semiconductor substrate and the ion beam impinging on a surface of the semiconductor substrate.

Provided is a scanning electron microscope provided with an energy selection and detection function for a SE.sub.1 generated on a sample while suppressing the detection amount of a SE.sub.3 excited due to a BSE in the scanning electron microscope that does not apply a deceleration method. Provided are: an electron optical system that includes an electron source 21 generating an irradiation electron beam and an objective lens 12 focusing the irradiation electron beam on a sample; a detector 13 that is arranged outside an optical axis of the electron optical system and detects a signal electron generated when the sample is irradiated with the irradiation electron beam; a deflection electrode that forms a deflection field 26 to guide the signal electron to the detector; a disk-shaped electrode 23 that is arranged to be closer to the electron source than the deflection field and has an opening through which the irradiation electron beam passes; and a control electrode arranged along the optical axis to be closer to the sample than the deflection field. The sample and the objective lens are set to a reference potential. A potential lower than the reference potential is applied to the disk-shaped electrode, and a potential higher than the reference potential is applied to the control electrode.

A method of doping a wafer includes implanting ions into a wafer by irradiating the wafer with an ion beam using an implantation device. The implantation device includes a filter frame and a filter held by the filter frame, wherein the filter is irradiated by the ion beam passing through the filter to the wafer, and the filter is arranged such that protruding microstructures of the filter face away from the wafer and towards the ion beam.

The invention relates to an implantation device, an implantation system and a method. The implantation device includes a filter frame and a filter held by the filter frame, and a collimator structure. The filter is designed to be irradiated by an ion beam passing through the filter. The collimator structure is arranged on the filter, in the transmitted beam downstream of the filter, or on the target substrate.