Patent classifications
H01J2237/053
ELECTRON GUN AND ELECTRON MICROSCOPE
The electron gun is provided with a first anode electrode and a second anode electrode to generate an acceleration and deceleration electric field. A lens electric field makes it possible to irradiate a sample with an electron beam emitted from a part outside an optical axis of the photoelectric film without being blocked by a differential exhaust diaphragm. A wide range of electron beams off-optical axis can be used even in a high-brightness photocathode that requires high vacuum. As a result, the photoelectric film and the electron gun can be extended in life, can be stabilized, and can be increased in brightness. Further, it is possible to facilitate a control of emitting electron beams from a plurality of positions on the photoelectric film, a timing control of emitting electron beams from a plurality of positions, a condition control of an electron beam in an electron microscope using electron beams.
CHARGED PARTICLE DETECTION FOR SPECTROSCOPIC TECHNIQUES
A method and apparatus for detection of charged particles in spectroscopy. Charged particles, received from an energy dispersive spectroscopic analyser as a charged particle beam, are accelerated towards a detector. The accelerated charged particles are received at an array of detecting pixels, the array of detecting pixels forming the detector. The charged particles arriving at the detector have a spread in the energy dispersive direction.
MULTIPLE SECONDARY ELECTRON BEAM ALIGNMENT METHOD, MULTIPLE SECONDARY ELECTRON BEAM ALIGNMENT APPARATUS, AND ELECTRON BEAM INSPECTION APPARATUS
A multiple secondary electron beam alignment method includes scanning a plurality of first detection elements of a multi-detector, which are arrayed in a grid, with multiple secondary electron beams emitted from a surface of a target object on a stage, detecting a plurality of beams including a corner beam located at a corner in the multiple secondary electron beams by the multi-detector, calculating a positional relationship between the plurality of beams including the corner beam and a plurality of second detection elements, which have detected the plurality of beams including the corner beam, in the plurality of first detection elements, calculating, based on the positional relationship, a shift amount for aligning the plurality of first detection elements with the multiple secondary electron beams, and moving, using the shift amount, the multi-detector relatively to the multiple secondary electron beams.
ELECTRON OPTICAL MODULE FOR PROVIDING AN OFF-AXIAL ELECTRON BEAM WITH A TUNABLE COMA
An electron optical module for providing an off-axial electron beam with a tunable coma, according to the present disclosure includes a structure positioned downstream of an electron source and an electron lens assembly positioned between the structure and the electron source. The structure generates a decelerating electric field, and is positioned to prevent the passage of electrons along the optical axis of the electron lens assembly. The electron optical module further includes a micro-lens that is not positioned on the optical axis of the electron lens assembly and is configured to apply a lensing effect to an off-axial election beam. Aberrations applied to the off-axial electron beam by the micro-lens and the electron lens assembly combine so that a coma of the off-axial beam has a desired value in a downstream plane.
BANDPASS CHARGED PARTICLE ENERGY FILTERING DETECTOR FOR CHARGED PARTICLE TOOLS
Methods and systems for detecting charged particles from a specimen are provided. One system includes a first repelling mesh configured to repel charged particles from a specimen having an energy lower than a first predetermined energy and a second repelling mesh configured to repel the charged particles that pass through the first repelling mesh and have an energy that is lower than a second predetermined energy. The system also includes a first attracting mesh configured to attract the charged particles that pass through the first repelling mesh, are repelled by the second repelling mesh, and have an energy that is higher than the first predetermined energy and lower than the second predetermined energy. The system further includes a first detector configured to generate output responsive to the charged particles that pass through the first attracting mesh.
ENERGY DISCRIMINATING ELECTRON DETECTOR AND SCANNING ELECTRON MICROSCOPE USING THE SAME
When an electrode (29) such as a grid applied with a negative voltage is installed in front of an objective lens (23), low energy electrons among secondary electrons (25) generated from a sample (24) by an electron beam or the like is reflected by the electrode to come into a detector (22) installed in the sample (24) side, while electrons of higher energy are not detected, since they are not reflected by the electrode. Accordingly, since only the electrons of lower energy of the secondary electrons can be detected by discriminating the secondary electrons by the energy, it is possible to obtain a detection signal, e.g., rich in the information on the surface state of the sample.
Deceleration apparatus for ribbon and spot beams
A deceleration apparatus capable of decelerating a short spot beam or a tall ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.
ION BEAM IRRADIATION APPARATUS
An ion beam irradiation apparatus is provided. The apparatus includes an ion source, a mass separator, and an energy filter. The mass separator sorts dopant ions having a specific mass number and valence from an ion beam extracted from the ion source, and outputs the dopant ions. The energy filter is formed to define a beam passing region for allowing the ion beam to pass therethrough, and configured to have a given filter potential in response to application of a voltage thereto to separate passable ions capable of passing through the beam passing region and non-passable ions incapable of passing through the beam passing region, from each other by a difference in ion energy. The given filter potential is set such that the dopant ions are included in the passable ions, and a portion of unwanted ions which cannot be separated from the dopant ions by the mass separator are included in the non-passable ions.
Bandpass charged particle energy filtering detector for charged particle tools
Methods and systems for detecting charged particles from a specimen are provided. One system includes a first repelling mesh configured to repel charged particles from a specimen having an energy lower than a first predetermined energy and a second repelling mesh configured to repel the charged particles that pass through the first repelling mesh and have an energy that is lower than a second predetermined energy. The system also includes a first attracting mesh configured to attract the charged particles that pass through the first repelling mesh, are repelled by the second repelling mesh, and have an energy that is higher than the first predetermined energy and lower than the second predetermined energy. The system further includes a first detector configured to generate output responsive to the charged particles that pass through the first attracting mesh.
Electrostatic filter providing reduced particle generation
Provided herein are approaches for decreasing particle generation in an electrostatic lens. In some embodiments, an ion implantation system may include an electrostatic lens including an entrance for receiving an ion beam and an exit for delivering the ion beam towards a target, the electrostatic lens including a first terminal electrode, a first suppression electrode, and a first ground electrode disposed along a first side of an ion beamline, wherein the first ground electrode is grounded and positioned adjacent the exit. The electrostatic lens may further include a second terminal electrode, a second suppression electrode, and a second ground electrode disposed along a second side of the ion beamline, wherein the second ground electrode is grounded and positioned adjacent the exit. The implantation system may further include a power supply operable to supply a voltage and a current to the electrostatic lens for controlling the ion beam.