Patent classifications
H01J2237/055
ELECTRON GUN AND ELECTRON MICROSCOPE
The electron gun is provided with a first anode electrode and a second anode electrode to generate an acceleration and deceleration electric field. A lens electric field makes it possible to irradiate a sample with an electron beam emitted from a part outside an optical axis of the photoelectric film without being blocked by a differential exhaust diaphragm. A wide range of electron beams off-optical axis can be used even in a high-brightness photocathode that requires high vacuum. As a result, the photoelectric film and the electron gun can be extended in life, can be stabilized, and can be increased in brightness. Further, it is possible to facilitate a control of emitting electron beams from a plurality of positions on the photoelectric film, a timing control of emitting electron beams from a plurality of positions, a condition control of an electron beam in an electron microscope using electron beams.
PARTICLE BEAM DEVICE HAVING A DEFLECTION UNIT
The invention relates to a particle beam device (100) for imaging, analyzing and/or processing an object (114). The particle beam device (100) comprises a first particle beam generator (300) for generating a first particle beam, wherein the first particle beam generator (300) has a first generator beam axis (301), wherein an optical axis (OA) of the particle beam device (100) and the first generator beam axis (301) are identical; a second particle beam generator (400) for generating a second particle beam, wherein the second particle beam generator (400) has a second generator beam axis (401), wherein the optical axis (OA) and the second generator beam axis (401) are arranged at an angle being different from 0° and 180°; a deflection unit (500) for deflecting the second particle beam from the second generator beam axis (401) to the optical axis (OA) and along the optical axis (OA), wherein the deflection unit (500) has a first opening (501) and a second opening (502) being different from the first opening (501), wherein the optical axis (OA) runs through the first opening (501), wherein the second generator beam axis (401) runs through the second opening (502); an objective lens (107) for focusing the first particle beam or the second particle beam onto the object (114), wherein the optical axis (OA) runs through the objective lens (107); and at least one detector (116, 121, 122) for detecting interaction particles and/or interaction radiation.
ION PRODUCTION SYSTEM WITH EFFICIENT ION COLLECTION
A system includes an ion source configured to generate ions having a first polarity, one or more extraction electrodes configured to extract the ions from the ion source as an ion beam having an extraction energy, a mass resolving slit or aperture configured to select a desired isotope from the ion beam such that a desired isotopic ion beam passes through the mass resolving slit or aperture, a target positioned relative to the mass resolving slit or aperture so that the desired isotopic ion beam is incident on the target, and a voltage source coupled to the target and configured to hold the target at a first voltage having the first polarity. The first voltage causes a reduction of the extraction energy as the desired isotopic ion beam approaches the target to minimize sputtering and maximize collection of the ions on the target to reconstitute an ionized material.
MULTIPLE SECONDARY ELECTRON BEAM ALIGNMENT METHOD, MULTIPLE SECONDARY ELECTRON BEAM ALIGNMENT APPARATUS, AND ELECTRON BEAM INSPECTION APPARATUS
A multiple secondary electron beam alignment method includes scanning a plurality of first detection elements of a multi-detector, which are arrayed in a grid, with multiple secondary electron beams emitted from a surface of a target object on a stage, detecting a plurality of beams including a corner beam located at a corner in the multiple secondary electron beams by the multi-detector, calculating a positional relationship between the plurality of beams including the corner beam and a plurality of second detection elements, which have detected the plurality of beams including the corner beam, in the plurality of first detection elements, calculating, based on the positional relationship, a shift amount for aligning the plurality of first detection elements with the multiple secondary electron beams, and moving, using the shift amount, the multi-detector relatively to the multiple secondary electron beams.
Mass analyzing electromagnet and ion beam irradiation apparatus
A mass analyzing electromagnet is provided. The mass analyzing electromagnet includes an analysis tube having an internal zone formed as a passage for the ion beam; and a shield member mounted to an inner wall surface of the analyzing tube, a portion of the shield member intersecting with a direction perpendicular to a traveling direction of an ion beam and a mass-based separation direction of the ion beam so as to block a portion of the ion beam.
Apparatus for multiple charged-particle beams
Systems and methods of observing a sample in a multi-beam apparatus are disclosed. The multi-beam apparatus may include an electron source configured to generate a primary electron beam, a pre-current limiting aperture array comprising a plurality of apertures and configured to form a plurality of beamlets from the primary electron beam, each of the plurality of beamlets having an associated beam current, a condenser lens configured to collimate each of the plurality of beamlets, a beam-limiting unit configured to modify the associated beam current of each of the plurality of beamlets, and a sector magnet unit configured to direct each of the plurality of beamlets to form a crossover within or at least near an objective lens that is configured to focus each of the plurality of beamlets onto a surface of the sample and to form a plurality of probe spots thereon.
APPARATUS FOR MULTIPLE CHARGED-PARTICLE BEAMS
Systems and methods of observing a sample in a multi-beam apparatus are disclosed. The multi-beam apparatus may include an electron source configured to generate a primary electron beam, a pre-current limiting aperture array comprising a plurality of apertures and configured to form a plurality of beamlets from the primary electron beam, each of the plurality of beamlets having an associated beam current, a condenser lens configured to collimate each of the plurality of beamlets, a beam-limiting unit configured to modify the associated beam current of each of the plurality of beamlets, and a sector magnet unit configured to direct each of the plurality of beamlets to form a crossover within or at least near an objective lens that is configured to focus each of the plurality of beamlets onto a surface of the sample and to form a plurality of probe spots thereon.
ION IMPLANTER AND ION SELECTION METHOD
An ion implanter according to an embodiment of the present disclosure includes: an ion source that includes a plurality of kinds of ions; an extraction electrode that extracts the plurality of kinds of ions from the ion source and generates an ion beam; an ion beam transport tube that transports the ion beam to an object to be irradiated with the ion beam; and an interaction section that is disposed inside the ion beam transport tube, extends substantially parallel to an extending direction of the ion beam transport tube, and is fixed at a predetermined electric potential.
Charged particle beam application apparatus
A charged particle beam application apparatus includes a beam separator. The beam separator includes a first magnetic pole, a second magnetic pole facing the first magnetic pole, a first electrode and a second electrode that extend along an optical axis of a primary beam and are arranged in a first direction perpendicular to the optical axis, on a first surface of the first magnetic pole which faces the second magnetic pole, and a third electrode and a fourth electrode that extend along the optical axis and face the first electrode and the second electrode, respectively, on a second surface of the second magnetic pole which faces the first magnetic pole.
SPECIFIC TYPE ION SOURCE AND PLASMA FILM FORMING APPARATUS
A specific type ion source 10 includes a chamber 11; a source gas supply 12 configured to supply an O.sub.2 gas into the chamber 11; a plasma forming device 13 configured to form plasma within the chamber 11 by applying a high frequency power to the O.sub.2 gas supplied into the chamber 11; an accelerator 14 configured to extract ions of an O element included in the plasma formed within the chamber 11 to an outside of the chamber 11, and configured to accelerate the extracted ions in a direction indicated by an arrow AR14; and a sorting device 15 configured to sort out a specific type ion O.sup.− from the ions accelerated by the accelerator 14 and configured to output the sorted specific type ion in a direction indicated by an arrow AR12.