An ion implantation device (20) comprising an energy filter (25), wherein the energy filter (25) has a thermal energy dissipation surface area, wherein the energy filter (25) comprises a membrane with a first surface and a second surface disposed opposite to the first surface, the first surface being a structured surface.

A method of producing an implantation ion energy filter, suitable for processing a power semiconductor device. In one example, the method includes creating a preform having a first structure; providing an energy filter body material; and structuring the energy filter body material by using the preform, thereby establishing an energy filter body having a second structure.

There is provided a gas analyzer apparatus including: a sample chamber which is equipped with a dielectric wall structure and into which only sample gas to be measured is introduced; a plasma generation mechanism that generates plasma inside the sample chamber, which has been depressurized, using an electric field and/or a magnetic field applied through the dielectric wall structure; and an analyzer unit that analyzes the sample gas via the generated plasma. By doing so, it is possible to provide a gas analyzer apparatus capable of accurately analyzing sample gases, even those including corrosive gas, over a long period of time.

There is provided an electron microscope in which a crossover position can be kept constant. The electron microscope (100) includes: an electron source (110) for emitting an electron beam; an acceleration tube (170) having acceleration electrodes (170a-170f) and operative to accelerate the electron beam; a first electrode (160) operative such that a lens action is produced between this first electrode (160) and the initial stage of acceleration electrode (170a); an accelerating voltage supply (112) for supplying an accelerating voltage to the acceleration tube (170); a first electrode voltage supply (162) for supplying a voltage to the first electrode (160); and a controller (109b) for controlling the first electrode voltage supply (162). The lens action produced between the first electrode (160) and the initial stage of acceleration electrode (170a) forms a crossover (CO2) of the electron beam. The controller (109b) controls the first electrode voltage supply (162) such that, if the accelerating voltage is modified, the ratio between the voltage applied to the first electrode (160) and the voltage applied to the initial stage of acceleration electrode (170a) is kept constant.

An electrode structure for guiding and, for example, for splitting a beam of charged particles, for example an electron beam, along a longitudinal path has multipole electrode arrangements that are spaced apart from one another along the longitudinal path and that have DC voltage electrodes. The electrode arrangements are configured to generate static multipole fields centered around the path in transverse planes oriented perpendicular to the longitudinal path, wherein the field strengths of the static multipole fields in the transverse planes each have a local minimum at the location of the path and increase as the distance from the location of the path increases. Field directions of the static multipole fields vary periodically with a period length along the path so that the particles propagating along the path are subjected to an inhomogeneous alternating electric field due to their intrinsic movement and experience a transverse return force towards the longitudinal path on average over time.

Proposed is a charged particle beam apparatus for the purpose of detecting a charged particle emitted from a sample in a specific direction by discriminating between the charged particle and a charged particle emitted in another direction. As one aspect of achieving the above purpose, proposed is a charged particle beam apparatus including an objective lens configured to focus a beam emitted from a charged particle source, a detector (8) configured to detect at least one of a first charged particle (23) emitted from a sample by irradiating the sample with the beam and a second charged particle emitted from a charged particle collided member by causing the first charged particle to collide with the charged particle collision member disposed on a trajectory of the first charged particle, and an electrostatic lens (12) including a plurality of electrodes disposed between the objective lens and the detector, in which the electrostatic lens is a Butler type.

The present disclosure relates to a method includes generating ions with an ion source of an ion implantation apparatus based on an ion implantation recipe. The method includes accelerating the generated ions based on an ion energy setting in the ion implantation recipe and determining an energy spectrum of the accelerated ions. The method also includes analyzing a relationship between the determined energy spectrum and the ion energy setting. The method further includes adjusting at least one parameter of a final energy magnet (FEM) of the ion implantation apparatus based on the analyzed relationship.

A method, a non-transitory computer readable medium and a three-dimensional evaluation system for providing three dimensional information regarding structural elements of a specimen. The method can include illuminating the structural elements with electron beams of different incidence angles, where the electron beams pass through the structural elements and the structural elements are of nanometric dimensions; detecting forward scattered electrons that are scattered from the structural elements to provide detected forward scattered electrons; and generating the three dimensional information regarding structural elements based at least on the detected forward scattered electrons.

An ion implantation system comprising: a sample platform; an ion gun; an electrostatic linear accelerator; a direct current (DC) final energy magnet (FEM); and a processor. The processor is programmed to control: a wafer acceptance test instrument, a DC recipe calculator, a DC real energy calculator, and a tool energy shift verifier. The wafer acceptance test instrument is configured to apply a wafer acceptance test (WAT) recipe to a test sample on the sample platform. The DC recipe calculator is configured to calculate a recipe for the DC FEM. The DC real energy calculator is configured to calculate a real energy of the DC FEM. The tool energy shift verifier is configured to verify a tool energy shift of the DC FEM. The ion implantation system is configured to tune the DC FEM based on the verified tool energy shift, and obtain a peak magnetic field of the DC FEM.

Substrate processing systems, such as ion implantation systems, deposition systems and etch systems, having textured silicon liners are disclosed. The silicon liners are textured using a chemical treatment that produces small features, referred to as micropyramids, which may be less than 20 micrometers in height. Despite the fact that these micropyramids are much smaller than the textured features commonly found in graphite liners, the textured silicon is able to hold deposited coatings and resist flaking. Methods for performing preventative maintenance on these substrate processing systems are also disclosed.