A Schottky thermal field emitter (TFE) source integrated with a beam splitter by a standoff, which supports the beam splitter above the Schottky TFE extractor faceplate by a distance of 0.05 mm to 2 mm. The beam splitter includes a microhole array integrated with the standoff and being disposed opposite the extractor faceplate, the microhole array having a plurality of microholes that split the electron beam generated by the Schottky TFE into a plurality of beamlets. The support and extractor may be fabricated from the same material or from different materials. The support may be formed from a high temperature resistive material, which causes a potential difference between the extractor and the microhole array. This potential difference creates positively charged electrostatic lenses at the microholes, which increases current in the individual beamlets. Voltage on the microarray plate may be varied to achieve a high beamlet current.

In a Schottky emitter or a thermal field emitter using a hexaboride single crystal, side emission from portions other than an electron emission portion is reduced. An electron source according to the invention includes: a protrusion (40) configured to emit an electron when an electric field is generated; a shank (41) that supports the protrusion (40) and has a diameter decreasing toward the protrusion (40); and a body (42) that supports the shank (41), in which the protrusion (40), the shank (41), and the body (42) are each made of a hexaboride single crystal, and a part including the shank (41) and the body (42) excluding the protrusion (40) is covered with a material having a work function higher than that of the hexaboride single crystal.

The present disclosure is related to a Schottky thermal field (TFE) source for emitting an electron beam. Electron optics can adjust a shape of the electron beam before the electron beam impacts a scintillator screen. Thereafter, the scintillator screen generates an emission image in the form of light. An emission image can be adjusted and captured by a camera sensor in a camera at a desired magnification to create a final image of the Schottky TFE source's tip. The final image can be displayed and analyzed to for defects.

Electron sources can include an electron source crystal coupled in series between opposing electrically conductive supports to form an electrically conductive path, wherein the electrical resistance of each of the electrically conductive supports is lower than the electrical resistance of the electron source crystal. Electron source crystals can include an emitting end and opposing shank end, wherein the shank end includes opposing leg portions. Electrically conductive supports can include foil supports spaced apart across a gap, wherein each of the opposing leg portions is attached to a respective foil support such that the foil supports are electrically connected to form the electrically conductive path. Particle focusing system are also disclosed. Electron sources can include an electron source crystal having an emitting end and opposing shank end, wherein the shank end is formed of a pair of opposing leg portions. Methods of manufacturing and operating electron sources are also disclosed.

A thermal field emitter, an apparatus, and a method for generating multiple beams for an e-beam tool are provided. The thermal field emitter includes an electron emitting portion configured to emit an electron beam and a nano-aperture array (NAA) having a plurality of openings. The NAA is positioned in a path of the electron beam. The NAA is configured to form multiple beams. The multiple beams include electrons from the electron beam that pass through the plurality of openings.

The present disclosure is related to a Schottky thermal field (TFE) source for emitting an electron beam. Electron optics can adjust a shape of the electron beam before the electron beam impacts a scintillator screen. Thereafter, the scintillator screen generates an emission image in the form of light. An emission image can be adjusted and captured by a camera sensor in a camera at a desired magnification to create a final image of the Schottky TFE source's tip. The final image can be displayed and analyzed to for defects.

Electron emitters and methods of fabricating the electron emitters are disclosed. According to certain embodiments, an electron emitter includes a tip with a planar region having a diameter in a range of approximately (0.05-10) micrometers. The electron emitter tip is configured to release field emission electrons. The electron emitter further includes a work-function-lowering material coated on the tip.

An electron gun device that emits an electron beam by heating to a high temperature in a vacuum. The surface of a material, which emits an electron beam, is a hydrogenated metal that is melted and in a liquid state during a high-temperature operation. The liquid hydrogenated metal is contained in a hollow cover tube container, which is in a solid state during the high-temperature operation, in the form of a hydrogenated liquid metal or in the form of a liquid metal before hydrogenation, and heated together with the cover tube container to a high temperature. The hydrogenated liquid metal is exposed from the cover tube container and forms a liquid surface where gravity, the electric field and the surface tension of the liquid surface are balanced; and an electron beam is emitted from the exposed surface of the hydrogenated liquid metal.

An inspection method for a substrate, the inspection method including: providing an electron beam having a first polarization state to a sample of the semiconductor substrate; detecting a first response signal of the sample caused by interaction of the electron beam having the first polarization state with the sample; providing an electron beam having a second polarization state to the sample of the semiconductor substrate; detecting a second response signal of the sample caused by interaction of the electron beam having the second polarization state with the sample; and determining a geometric or material property of the sample, based on the first response signal and the second response signal.

An array of carbon nanotube micro-tip structure includes an insulating substrate and a plurality of patterned carbon nanotube film structures. The insulating substrate includes a surface. The surface includes an edge. A plurality of patterned carbon nanotube film structures spaced from each other. Each of the plurality of patterned carbon nanotube film structures is partially arranged on the surface of the insulating substrate. Each of the plurality of patterned carbon nanotube film structures comprises two strip-shaped arms joined together forming a tip portion protruding and suspending from the edge of the surface of the insulating substrate. Each of the two strip-shaped arms comprises a plurality of carbon nanotubes parallel to the surface of the insulating substrate.