The invention relates to an electron source comprising a conductive substrate, a conductor disposed facing the substrate, the electron source emitting an electron beam when the conductor is positively biased with respect to the substrate, and an electrically insulating crystal arranged on the substrate, facing the conductor, the substrate defining with the crystal a void including at least one peak located at a distance from the crystal, the crystal having, in a plane parallel to the substrate, dimensions of less than 100 nm and a thickness of less than 50 nm.

The present disclosure provides a charged particle beam device capable of simultaneously achieving protection of a charged particle source against electrical discharging inside a charged particle gun and highly accurate control of the charged particle gun, for both DC and AC components. A charged particle gun according to the present disclosure is configured such that an extraction voltage and an acceleration voltage are superposed and supplied to a charged particle beam source, a wiring between the charged particle beam source and a voltage circuit is covered with first and second enclosures, the first enclosure is configured to be connected to an extraction electrode, and the second enclosure is configured to be connected to an acceleration electrode and to a reference voltage of the voltage circuit.

The present invention provides a simpler method for sharpening a tip of an emitter. In addition, the present invention provides an emitter including a nanoneedle made of a single crystal material, an emitter including a nanowire made of a single crystal material such as hafnium carbide (HfC), both of which stably emit electrons with high efficiency, and an electron gun and an electronic device using any one of these emitters. A method for manufacturing the emitter according to an embodiment of the present invention comprises processing a single crystal material in a vacuum using a focused ion beam to form an end of the single crystal material, through which electrons are to be emitted, into a tapered shape, wherein the processing is performed in an environment in which a periphery of the single crystal material fixed to a support is opened.

It is a CNT device (1) (carbon-metal structure) equipped with a carbon nanotube layer (2) (CNT layer 2; same hereafter) on a metal pedestal (4). The metal pedestal (4) is brazed to the CNT layer (2) with a brazing material layer (3) interposed therebetween. When manufacturing the CNT device (1), firstly, the CNT layer (2) is formed on a heat-resistant textured substrate (6). Next, the metal pedestal (4) is brazed to the CNT layer (2) that is on the heat-resistant textured substrate (6) with the brazing material layer (3) interposed therebetween. Then, the metal pedestal (4) (and the CNT layer 2) is peeled off the heat-resistant textured substrate (6) to transfer the CNT layer (2) from the heat-resistant textured substrate (6) to the metal pedestal (4).

The invention relates to a particle beam device (100) for imaging, analyzing and/or processing an object (114). The particle beam device (100) comprises a first particle beam generator (300) for generating a first particle beam, wherein the first particle beam generator (300) has a first generator beam axis (301), wherein an optical axis (OA) of the particle beam device (100) and the first generator beam axis (301) are identical; a second particle beam generator (400) for generating a second particle beam, wherein the second particle beam generator (400) has a second generator beam axis (401), wherein the optical axis (OA) and the second generator beam axis (401) are arranged at an angle being different from 0° and 180°; a deflection unit (500) for deflecting the second particle beam from the second generator beam axis (401) to the optical axis (OA) and along the optical axis (OA), wherein the deflection unit (500) has a first opening (501) and a second opening (502) being different from the first opening (501), wherein the optical axis (OA) runs through the first opening (501), wherein the second generator beam axis (401) runs through the second opening (502); an objective lens (107) for focusing the first particle beam or the second particle beam onto the object (114), wherein the optical axis (OA) runs through the objective lens (107); and at least one detector (116, 121, 122) for detecting interaction particles and/or interaction radiation.

A thermal field emitter, an apparatus, and a method for generating multiple beams for an e-beam tool are provided. The thermal field emitter includes an electron emitting portion configured to emit an electron beam and a nano-aperture array (NAA) having a plurality of openings. The NAA is positioned in a path of the electron beam. The NAA is configured to form multiple beams. The multiple beams include electrons from the electron beam that pass through the plurality of openings.

The present invention provides an apparatus of electron beam comprising an electron gun with a pinnacle limiting plate having at least one current-limiting aperture. The pinnacle limiting plate is located between a bottom (or lowest) anode and a top (or highest) condenser within the electron gun. A current (ampere) of the electron beam that has passed through the current-limiting aperture remains the same (unchanged) after the electron beam travels through the top condenser and an electron optical column and arrives at a sample space. Electron-electron interaction of the electron beam is thus reduced.

A system and corresponding method for electron cryomicroscopy, comprising: a field-emission gun for generating an electron beam, the field-emission gun being energized, in use, to generate a 80 keV to 120 keV electron beam which is emitted into a vacuum enclosure and towards a specimen holder; the vacuum enclosure containing, at least in part: an objective lens for focusing an image of the specimen, the objective lens being disposed in the path of the electron beam and having a chromatic aberration coefficient, Cc, selected to achieve a resolution value better than a desired amount; the specimen holder for holding a specimen, the specimen holder being disposed in the path of the electron beam; a cryostage for cooling a specimen; a cryo-shield for surrounding a specimen and reducing an ice contamination rate of the specimen; and a direct electron detector comprising an array of pixels, each pixel capable of detecting an incident electron that has passed through a sample and struck the pixel.

Electron emitters and methods of fabricating the electron emitters are disclosed. According to certain embodiments, an electron emitter includes a tip with a planar region having a diameter in a range of approximately (0.05-10) micrometers. The electron emitter tip is configured to release field emission electrons. The electron emitter further includes a work-function-lowering material coated on the tip.

A vacuum container is configured so that an opening on one side and an opening on another side in the longitudinal direction of a cylindrical insulating body are sealed with an emitter unit and a target unit respectively; and a vacuum chamber is provided on the inner peripheral side of the insulating body. The emitter unit is provided with: a moving body located on the one side in the longitudinal direction in the vacuum chamber and supported so as to be movable in the longitudinal direction via a bellows; and a guard electrode located on the outer peripheral side of the moving body. An emitter section having an electron generating section is formed at a tip section of the moving body on the other side in the longitudinal direction by subjecting the surface of the tip section to film formation processing.