A multi-beam apparatus for observing a sample with high resolution and high throughput and in flexibly varying observing conditions is proposed. The apparatus uses a movable collimating lens to flexibly vary the currents of the plural probe spots without influencing the intervals thereof, a new source-conversion unit to form the plural images of the single electron source and compensate off-axis aberrations of the plural probe spots with respect to observing conditions, and a pre-beamlet-forming means to reduce the strong Coulomb effect due to the primary-electron beam.

A multiple-charged particle-beam irradiation apparatus includes a shaping aperture array substrate that causes a charged particle beam to pass through a plurality of first apertures to form multi-beams, a plurality of blanking aperture array substrates each provided with a plurality of second apertures, which enable corresponding beams to pass, and including a blanker arranged at each of the second apertures, a movable table on which the blanking aperture array substrates are mounted so as to be spaced apart from each other in a second direction, which is orthogonal to a first direction along an optical axis, and that moves in the second direction to position one of the blanking aperture array substrates on the optical axis, and an alignment mechanism that performs an alignment adjustment between the blanking aperture array substrate on the optical axis and the shaping aperture array substrate.

The present invention provides a plasma generating system that includes: a waveguide; a plasma cavity coupled to the waveguide and configured to generate a plasma therewithin by use of microwave energy; a hollow cylinder protruding from a wall of the waveguide and having a bottom cap that has an aperture; a detection unit for receiving the light emitted by the plasma through the aperture and configured to measure intensities of the light in an ultraviolet (UV) range and an infrared (IR) range; and a controller for controlling the detection unit.

The present invention provides a plasma generating system that includes: a waveguide; a plasma cavity coupled to the waveguide and configured to generate a plasma therewithin by use of microwave energy; a hollow cylinder protruding from a wall of the waveguide and having a bottom cap that has an aperture; a detection unit for receiving the light emitted by the plasma through the aperture and configured to measure intensities of the light in an ultraviolet (UV) range and an infrared (IR) range; and a controller for controlling the detection unit.

A multiple particle beam system comprises a magnetic immersion lens and a detection system. A cross-over of the second individual particle beams is provided in the secondary path between the beam switch and the detection system, and a contrast aperture with a central cutout for cutting out the secondary beams is arranged in the region of the cross-over. A contrast correction lens system with a first magnetic contrast correction lens is arranged between the objective lens and the contrast aperture. The contrast correction lens system is configured to generate a magnetic field with an adjustable strength and correct beam tilts of the secondary beams in the cross-over in relation to the optical axis of the multiple particle beam system. It is possible to obtain a more uniform contrast for different individual images and the contrast can be improved overall.

The invention relates to a charged particle beam exposure apparatus configured to expose cut patterns or via patterns on a substrate having a plurality of line patterns 81a arranged on an upper surface of the substrate at a constant pitch by irradiating the substrate with a plurality of charged particle beams B1 to Bn while moving a one-dimensional array beam A1 in an X direction parallel to the line patterns 81a, the one-dimensional array beam A1 being a beam in which the charged particle beams B1 to Bn are arranged in an Y direction orthogonal to the line patterns 81a.

By irradiating a sample with an unfocused ion beam, processing accuracy of an ion milling device for processing a sample or reproducibility accuracy of a shape of a processed surface is improved. Therefore, the ion milling device includes a sample chamber, an ion source position adjustment mechanism provided at the sample chamber, an ion source attached to the sample chamber via the ion source position adjustment mechanism and configured to emit an ion beam, and a sample stage configured to rotate around a rotation center. When a direction in which the rotation center extends when an ion beam center of the ion beam matches the rotation center is set as a Z direction, and a plane perpendicular to the Z direction is set as an XY plane, the ion source position adjustment mechanism is capable of adjusting a position of the ion source on the XY plane and a position of the ion source in the Z direction.

A multi-beam apparatus for observing a sample with high resolution and high throughput and in flexibly varying observing conditions is proposed. The apparatus uses a movable collimating lens to flexibly vary the currents of the plural probe spots without influencing the intervals thereof, a new source-conversion unit to form the plural images of the single electron source and compensate off-axis aberrations of the plural probe spots with respect to observing conditions, and a pre-beamlet-forming means to reduce the strong Coulomb effect due to the primary-electron beam.

A plasma processing apparatus includes a plasma processing chamber; a substrate support disposed in the plasma processing chamber and including an electrostatic chuck; a first ring disposed on the electrostatic chuck to surround a substrate on the electrostatic chuck and including an inner annular portion, an intermediate annular portion, and an outer annular portion, a top surface of the inner annular portion being higher than that of the intermediate annular portion, a top surface of the outer annular portion being higher than that of the inner annular portion; a second ring disposed on the intermediate annular portion; and an actuator configured to vertically move the second ring to maintain a top surface of the second ring at a first height greater than a height of the top surface of the inner annular portion and less than a height of the top surface of the outer annular portion.

In a charged particle beam device including a deceleration optical system, a change in a deceleration electric field and an axis shift due to a structure between an objective lens and a sample are prevented to reduce adverse effects on an irradiation system and detection system. The charged particle beam device includes an electron source, an objective lens configured to focus a probe electron beam from the electron source on the sample, an acceleration electrode configured to accelerate the probe electron beam, a first detector provided in the acceleration electrode, a deceleration electrode configured to form a deceleration electric field for the probe electron beam with the acceleration electrode, the probe electron beam being configured to pass through an opening of the deceleration electrode, and a second detector inserted between the deceleration electrode and the sample. The second detector includes an opening portion larger than the opening of the deceleration electrode, and a sensing surface is provided around the opening portion.