A charged particle system generates a charged particle multi beam along a multi beam path. The charged particle system comprises an aperture array, a beam limit array and a condenser lens. In the aperture array are an array of apertures to generate from an up-beam charged particle source charged particle paths down-beam of the aperture array. The beam-limit array is down-beam of the aperture array. Defined in the beam-limit array is an array of beam-limit apertures for shaping the charged particle multi beam path. The condenser lens system is between the aperture array and the beam-limit array. The condenser lens system selectively operates different of rotation settings that define different ranges of beam paths between the aperture array and the beam-limit array. At each rotation setting of the condenser lens system, each beam-limit aperture of the beam-limit array lies on a beam path down-beam of the aperture array.

Methods include holding a sample with a movement stage configured to rotate the sample about a rotation axis, directing an imaging beam to a first sample location with the sample at a first rotational position about the rotation axis and detecting a first transmitted imaging beam image, rotating the sample using the movement stage about the rotation axis to a second rotational position, and directing the imaging beam to a second sample location by deflecting the imaging beam in relation to an optical axis of the imaging beam and detecting a second transmitted imaging beam image, wherein the second sample location is spaced apart from the first sample location at least at least in relation to the optical axis. Related systems and apparatus are also disclosed.

An improved system and method for inspection of a sample using a particle beam inspection apparatus, and more particularly, to systems and methods of scanning a sample with a plurality of charged particle beams. An improved method of scanning an area of a sample using N charged particle beams, wherein Nis an integer greater than or equal to two, and wherein the area of the sample comprises a plurality of scan sections of N consecutive scan lines, includes moving the sample in a first direction. The method also includes scanning, with a first charged particle beam of the N charged particle beams, first scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the first charged particle beam. The method further includes scanning, with a second charged particle beam of the N charged particle beams, second scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the second charged particle beam.

The present disclosure concerns an electron microscopy method, including the emission of a precessing electron beam and the acquisition, at least partly simultaneous, of an electron diffraction pattern and of intensity values of X rays.

Methods include holding a sample with a movement stage configured to rotate the sample about a rotation axis, directing an imaging beam to a first sample location with the sample at a first rotational position about the rotation axis and detecting a first transmitted imaging beam image, rotating the sample using the movement stage about the rotation axis to a second rotational position, and directing the imaging beam to a second sample location by deflecting the imaging beam in relation to an optical axis of the imaging beam and detecting a second transmitted imaging beam image, wherein the second sample location is spaced apart from the first sample location at least at least in relation to the optical axis. Related systems and apparatus are also disclosed.

An improved system and method for inspection of a sample using a particle beam inspection apparatus, and more particularly, to systems and methods of scanning a sample with a plurality of charged particle beams. An improved method of scanning an area of a sample using N charged particle beams, wherein N is an integer greater than or equal to two, and wherein the area of the sample comprises a plurality of scan sections of N consecutive scan lines, includes moving the sample in a first direction. The method also includes scanning, with a first charged particle beam of the N charged particle beams, first scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the first charged particle beam. The method further includes scanning, with a second charged particle beam of the N charged particle beams, second scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the second charged particle beam.

The invention relates to a method for producing a sample on an object using a material processing device. The invention further relates to a computer program product and a material processing device for carrying out the method. The method comprises guiding a light beam over a surface of the object in a first direction along a first line, with material of the object being ablated when the light beam is guided over the surface of the object, changing the first direction into a second direction, guiding the light beam over the surface of the object in the second direction along a second line, with material of the object being ablated when the light beam is guided over the surface of the object along the second line, wherein the light beam is provided in pulsed fashion and is guided onto the surface of the object in such a way that the light beam ablates material from the object in a first operational state of the light beam device and that the light beam is not guided onto the object in a second operational state, and wherein the sample is produced in the first operational state by ablating material from the object.

Provided is a transmission electron microscope capable of obtaining a hollow-cone dark-field image and visually displaying irradiation conditions thereof. The transmission electron microscope is provided with an irradiation unit for irradiating a specimen with an electron beam, an objective lens for causing the electron beam transmitted through the specimen to form an image, beam deflectors for deflecting the electron beam, said beam deflectors being positioned higher than a position where the specimen is to be placed, an objective movable aperture for passing only a portion of the electron beam transmitted through the specimen, and a deflection coil control unit. The deflection coil control unit controls a deflection angle of the electron beam using the beam deflectors such that the specimen is irradiated with the electron beam at a predetermined angle with respect to an optical axis while the electron beam is moving in a precessional manner and such that only a diffracted wave and/or a scattered wave having a desired angle among diffracted waves and/or scattered waves generated when the electron beam is transmitted through the specimen passes through the objective movable aperture.

A method of measuring a relative rotational angle includes: shifting an electron beam on a specimen plane by using a deflector; tilting the electron beam with respect to the specimen plane by using the deflector; acquiring a first STEM image including information of a scattering azimuth angle and a second STEM image not including the information of the scattering azimuth angle, before the shifting and the tilting; acquiring a third STEM image including the information of the scattering azimuth angle and a fourth STEM image not including the information of the scattering azimuth angle, after the shifting and the tilting; and obtaining the relative rotational angle based on the first STEM image, the second STEM image, the third STEM image and the fourth STEM image.

A particle beam system includes a multi-beam particle source for generating a multiplicity of charged individual particle beams, and a magnetic multi-deflector array for deflecting the individual particle beams in the azimuthal direction. The magnetic multi-deflector array includes a magnetically conductive multi-aperture plate having a multiplicity of openings, which is arranged in the beam path of the particle beams such that the individual particle beams substantially pass through the openings of the multi-aperture plate. The magnetic multi-deflector array also includes a magnetically conductive aperture plate having an individual opening. The aperture plate is arranged in the beam path of the particle beams such that the individual particle beams substantially pass through the first aperture plate. The multi-aperture plate and the first aperture plate are connected to each other such that a cavity is formed between the two plates. A first coil for generating a magnetic field is arranged in the cavity between the first aperture plate and the multi-aperture plate such that the multiplicity of individual particle beams substantially pass through the coil.