A scanning electron microscope device for a sample to be detected and an electron beam inspection apparatus are provided, the scanning electron microscope device being configured to project electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, and comprising: an electron beam source, a deflection mechanism, and an objective lens assembly. The deflection mechanism comprises a first deflector located downstream the electron beam source and a second deflector located downstream the first deflector. The objective lens assembly comprises: an excitation coil; and a magnetic yoke, formed by a magnetizer material as a housing which opens towards the sample and comprising a hollow body defining an internal chamber where the excitation coil is accommodated, and at least one inclined portion extending nward from the hollow body at an angle with reference to the hollow body and directing towards the optical axis, with an end of the at least one inclined portion being formed into a pole piece. The deflection mechanism further comprises a compensation electrode, which is located between the pole piece and the surface of the sample and is configured to adjust a focusing position of the electron beam at which the electron beam is focused, in a condition of excitation thereof with a voltage being applied thereon, by adjusting the voltage.

It is provided a charged particle beam manipulation device for a plurality of charged particle beamlets, the charged particle beam manipulation device including a lens having a main optical axis, the lens including at least a first array of multipoles, each multipole of the first array of multipoles configured to compensate for a lens deflection force on a respective charged particle beamlet of the plurality of charged particle beamlets, the lens deflection force being a deflection force produced by the lens on the respective charged particle beamlet towards the main optical axis of the lens.

A method for electron microscopy comprises: adjusting at least one of an electron beam and an image beam in such a way that off-axial aberrations inflicted on at least one of the electron beam and the image beam are minimized, the adjusting performed by using a beam adjusting component to obtain at least one modified image beam, wherein the adjusting comprises applying both shifting and tilting to at least one of the electron beam and the image beam and wherein the amount of tilting of at least one of the electron beam and the image beam depends on the amount of shifting of at least one of the electron beam and the image beam respectively and wherein the amount of tilting is computed based on at least one of coma and astigmatism introduced as a consequence of the shift.

An electrostatic device includes a top and a bottom silicon layer, around an insulating buried layer. A beam opening allows a beam of charged particles to travel through. The device is encapsulated in an insulating layer. One or more electrodes and ground planes are deposited on the insulating layer. These also cover the inside of the beam opening. Electrodes and ground planes are physically and electrically separated by micro-trenches and micro-undercuts that provide shadow areas when the conductive areas are deposited. Electrodes may be shaped as elongated islands and may include portions overhanging the top silicon layer, supported by electrode-anchors. Manufacturing starts from a single wafer including the top, buried, and bottom layers, or it starts from two separate silicon wafers. Manufacturing includes steps to form the top and bottom beam openings and microstructures, to encapsulate the device in an insulating layer, and to deposit electrodes and ground areas.

Electrostatic mirror chromatic aberration (Cc) correctors, according to the present disclosure, comprise an electrostatic electron mirror that itself comprises a multipole. The electrostatic electron mirror is positioned within the corrector such that, when the corrector is in use, an electron beam passing through the corrector is not incident on the electrostatic electron mirror along the optical axis of the mirror. The mirror object distance of the electrostatic mirror is equal to the mirror image distance of the electrostatic mirror, and the electrostatic mirror is configured such that the electrostatic mirror applies no dispersion or coma aberration to the electron beam. The multipole is positioned in the mirror plane of the electrostatic electron mirror, and in some embodiments the multipole is a quadrupole.

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.

An improved source conversion unit of a charged particle beam apparatus is disclosed. The source conversion unit comprises a first micro-structure array including a plurality of micro-structures. The plurality of micro-structures is grouped into one or more groups. Corresponding electrodes of micro-structures in one group are electrically connected and driven by a driver to influence a corresponding group of beamlets. The micro-structures in one group may be single-pole structures or multi-pole structures. The micro-structures in one group have same or substantially same radial shifts from an optical axis of the apparatus. The micro-structures in one group have same or substantially same orientation angles with respect to their radial shift directions.

Certain improvements of multi-beam raster units such as multi-beam generating units and multi-beam deflector units of a multi-beam charged particle microscopes are provided. The improvements include design, fabrication and adjustment of multi-beam raster units including apertures of specific shape and dimensions. The improvements can enable multi-beam generation and multi-beam deflection or stigmation with higher precision. The improvements can be relevant for routine applications of multi-beam charged particle microscopes, for example in semiconductor inspection and review, where high reliability and high reproducibility and low machine-to-machine deviations are desirable.

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.

The invention relates to a method for electron microscopy. The method comprises providing an electron microscope, generating an electron beam and an image beam, adjusting one of the beam and of the beam and the image beam to reduce off-axial aberrations and correcting a diffraction pattern of the resulting modified beam. The invention also relates to a method for reducing throughput time in a sample image acquisition session in transmission electron microscopy. The method comprises providing an electron microscope, generating a beam and an image beam, adjusting one of the two to reduce off-axial aberrations and filtering the resulting modified image beam. The invention further relates to an electron microscope and to a non-transient computer-readable medium with a computer program for carrying out the methods.