An apparatus comprising a set of pixels configured to shape a beamlet approaching the set of pixels and a set of pixel control members respectively associated with each of the set of pixels, each pixel control member being arranged and configured to apply a signal to the associated pixel for shaping the beamlet.

A detector substrate (or detector array) for use in a charged particle multi-beam assessment tool to detect charged particles from a sample. The detector substrate defines an array of apertures for beam paths of respective charged particle beams of a multi-beam. The detector substrate includes a sensor unit array. A sensor unit of the sensor unit array is adjacent to a corresponding aperture of the aperture array. The sensor unit is configured to capture charged particles from the sample. The detector array may include an amplification circuit associated with each sensor unit in the sensor unit array and proximate to the corresponding aperture in the aperture array. The amplification circuit may include a Trans Impedance Amplifier and/or an analogue to digital converter.

This charged particle beam device comprises: a charged particle beam source that generates charged particle beams; an objective lens in which coil current is inputted to focus the charged particle beams on a sample; a control unit that controls the coil current; a hysteresis characteristics storage unit that stores hysteresis characteristics information of the objective lens; a history information storage unit that stores history information relating to the coil current; and an estimating unit that estimates the magnetic field generated by the objective lens based on the coil current, the history information, and the hysteresis characteristic information, and has a magnetic field correction unit that, when the absolute value of the change amount of the coil current is greater than a prescribed value, further adds to the magnetic field estimated by the estimating unit a correction value according to the coil current and its change amount, correcting the magnetic field generated by the objective lens.

It is provided a charged particle beam manipulation device for a plurality of charged particle beamlets, the charged particle beam manipulation device including a lens having a main optical axis, the lens including at least a first array of multipoles, each multipole of the first array of multipoles configured to compensate for a lens deflection force on a respective charged particle beamlet of the plurality of charged particle beamlets, the lens deflection force being a deflection force produced by the lens on the respective charged particle beamlet towards the main optical axis of the lens.

An electrostatic device includes a top and a bottom silicon layer, around an insulating buried layer. A beam opening allows a beam of charged particles to travel through. The device is encapsulated in an insulating layer. One or more electrodes and ground planes are deposited on the insulating layer. These also cover the inside of the beam opening. Electrodes and ground planes are physically and electrically separated by micro-trenches and micro-undercuts that provide shadow areas when the conductive areas are deposited. Electrodes may be shaped as elongated islands and may include portions overhanging the top silicon layer, supported by electrode-anchors. Manufacturing starts from a single wafer including the top, buried, and bottom layers, or it starts from two separate silicon wafers. Manufacturing includes steps to form the top and bottom beam openings and microstructures, to encapsulate the device in an insulating layer, and to deposit electrodes and ground areas.

An improved system is disclosed for wafer outer portion inspection in a charged particle beam system, such as a scanning electron microscope (SEM). The system uses multiple conductive rings around the wafer to correct an e-field distortion occurring at the wafer outer portion. The rings are applied with different complimentary voltages in order achieve a precise compensation of the e-field distortion.

A charged-particle assessment tool comprising a plurality of beam columns. Each beam column comprises: a charged-particle beam source configured to emit charged particles; a plurality of condenser lenses configured to form charged particles emitted from the charged-particle beam source into a plurality of charged-particle beams; and a plurality of objective lenses, each configured to project one of the plurality of charged-particle beams onto a sample. The beam columns are arranged adjacent one-another so as to project the charged particle beams onto adjacent regions of the sample.

Certain improvements of multi-beam raster units such as multi-beam generating units and multi-beam deflector units of a multi-beam charged particle microscopes are provided. The improvements include design, fabrication and adjustment of multi-beam raster units including apertures of specific shape and dimensions. The improvements can enable multi-beam generation and multi-beam deflection or stigmation with higher precision. The improvements can be relevant for routine applications of multi-beam charged particle microscopes, for example in semiconductor inspection and review, where high reliability and high reproducibility and low machine-to-machine deviations are desirable.

A charged particle assessment tool including: an objective lens configured to project a plurality of charged particle beams onto a sample, the objective lens having a sample-facing surface defining a plurality of beam apertures through which respective ones of the charged particle beams are emitted toward the sample; and a plurality of capture electrodes, each capture electrode adjacent a respective one of the beam apertures, configured to capture charged particles emitted from the sample.

The invention provides a charged particle beam device capable of reducing a positional shift between secondary beams generated in a beam separator. The charged particle beam device includes a charged particle beam source configured to irradiate a sample with a plurality of primary beams, a plurality of detectors configured to detect secondary beams emitted from the sample in correspondence to the primary beams, and a beam separator configured to deflect the secondary beams in a direction different from that of the primary beams. The charged particle beam device further includes a deflector provided between the beam separator and the detector to correct a positional shift between the secondary beams generated in the beam separator.