The present invention relates to a device for generating a dielectric barrier discharge for treatment of an object (1) to be activated with non-thermal atmospheric pressure plasma, comprising a dielectric working chamber (2) which has a wall (3) of a dielectric material and which encloses a working space (4), wherein a metallization (6) is applied to an outer side (5) of the wall (3) facing away from the working space (4), wherein the working space (4) is an open volume, and a high-voltage source (9) which is configured to apply a high voltage to the metallization (6) or to the object (1) to be activated when the object (1) to be activated is in the working space (4). According to a further aspect, the invention relates to a method of treatment of an object (1) to be activated with a non-thermal atmospheric pressure plasma.

A technique for treating the surface of one or more accelerator cavities of an accelerator module. This technique relies on the use of a particle beam to at least partially scan the inner surface of the one or more accelerator cavities. Such a technique offers a treatment solution that is more suitable for accelerator cavities, with better control of the implantation parameters.

A differential pumping apparatus for creating a high vacuum inside a processing space includes a displacement drive unit configured to move a substrate to be processed or a head, to adjust parallelism and distance between a surface to be processed and a surface of the head. Gap measurement devices are placed at three or more locations along the periphery of the surface of the head to provide distance information. A gap control unit is configured to control the displacement drive unit in response to the distance information between the surface to be processed and the surface adapted to face the surface to be processed, so that the surface to be processed and the surface adapted to face the surface to be processed are parallel.

An electron microscope includes a charged particle beam generator, a detector, a film and a bearing unit. The charged particle beam generator generates a first charged particle beam to bomb an object. The detector detects a second charged particle from the object to form an image. The film disposes on downstream of charged particle beam generator and has a first surface and a second surface. A space between charged particle beam generator and the first surface of film is a vacuum environment. The bearing unit disposes at a side of second surface of film and has a bearing surface and a back surface. The object disposes on the bearing surface of the bearing unit and a distance between an analyzed surface of the object and the film is less than a predetermined spacing. A liquid space exists between the analyzed surface and the film to be filled a liquid.

A plasma treatment chamber comprises a chamber body having an opening in a top surface thereof. A rotatable pedestal is within the chamber body having a support surface to hold and rotate a workpiece in a processing region. A cross-flow pumping ring is over the opening in the chamber body to inject a gas flow in a direction generally parallel to and across a surface of the workpiece. A lid is over the cross-flow pumping ring, the lid having a plurality of microwave resonators to ignite the gas flow and form plasma.

Specimen control means are disclosed for use with multipurpose particle beam instruments, such as with SEM, ESEM, TESEM, TEM, ETEM and ion microscopes. It provides a control stage located outside a chamber with a flexible wall that allows specimen movement inside the chamber. The same stage can open or close the bottom of the chamber base carrying a specimen stub, which is transferred to and from a conveyor belt or carousel supplied with a multitude of stubs filled with new specimens for examination. The chamber is further supplied with directed gas controls to regulate its gaseous environment. There is a supply of clean gas to maintain the instrument and specimen free of contamination, or to provide a reactant gas for microfabrication, or to enhance signal detection in a microscope. Stationary charged particle beam instruments are equipped with micro-mechanical specimen scanning for use in ultra-high resolution particle beam technologies.

A vacuum condition processing apparatus is provided, the top of which is connected to an external charged particle beam generating device, and the apparatus includes: a suction cup in contact with the specimen to be observed or the stage holding the specimen, a first gas controlling device connected to an external gas supplying system, and a second gas controlling device connected to an external pumping system; a window is deployed at the top of the apparatus, through which the particle beam can go into the apparatus; the first gas controlling device is arranged to connect the gas supplying system and the suction cup; the second gas controlling device is arranged to connect the gas pumping system and the suction cup. Also disclosed is a specimen observation system and method.

A vacuum condition processing apparatus is provided, the top of which is connected to an external charged particle beam generating device, and the apparatus includes: a suction cup in contact with the specimen to be observed or the stage holding the specimen, a first gas controlling device connected to an external gas supplying system, and a second gas controlling device connected to an external pumping system; a window is deployed at the top of the apparatus, through which the particle beam can go into the apparatus; the first gas controlling device is arranged to connect the gas supplying system and the suction cup; the second gas controlling device is arranged to connect the gas pumping system and the suction cup. Also disclosed is a specimen observation system and method.

Provided are new techniques for fault analysis in IC semiconductor devices, including system designs and methods to enable the probing of circuitry within an IC device under test (DUT) using electron beam (e-beam) techniques while the DUT is being stimulated electrically, or while the device is active on its own or within a host system mounted in a circuit board or other module. The DUT could be a packaged IC, or an IC in some unpackaged form. To create a local evacuated volume immediately outside the e-beam tool, a sealing element is sealed against or around the DUT for a localized seal. Such an arrangement obviates the need for vacuum feedthroughs of possibly thousands of signals required to operate and monitor the DUT, and further enables probing of a DUT while it is operating in its normal environment, such as installed on a circuit board in its system, or on a tester.

Provided are new techniques for fault analysis in IC semiconductor devices, including system designs and methods to enable the probing of circuitry within an IC device under test (DUT) using electron beam (e-beam) techniques while the DUT is being stimulated electrically, or while the device is active on its own or within a host system mounted in a circuit board or other module. The DUT could be a packaged IC, or an IC in some unpackaged form. To create a local evacuated volume immediately outside the e-beam tool, a sealing element is sealed against or around the DUT for a localized seal. Such an arrangement obviates the need for vacuum feedthroughs of possibly thousands of signals required to operate and monitor the DUT, and further enables probing of a DUT while it is operating in its normal environment, such as installed on a circuit board in its system, or on a tester.