The present inventive concept relates to a substrate processing device and a substrate processing method. The substrate processing device comprises: a chamber; a substrate support part rotatably installed in a process space inside the chamber so as to allow at least one substrate to be seated thereon; a first gas spray unit for spraying, to a first region of the process space, a source gas and a first purge gas for purging the source gas; a source gas supply source for supplying the source gas to the first gas spray unit; a first purge gas supply source for supplying the first purge gas to the first gas spray unit; a second gas spray unit spatially separated from the first region and configured to spray, to a second region of the process space, a reactant gas reacting with the source gas and a second purge gas for purging the reactant gas; a reactant gas supply source for supplying the reactant gas to the second gas spray unit; and a second purge gas supply source for supplying the second purge gas to the second gas spray unit.

The present disclosure provides a sample rotation system and method. The sample rotation system includes a rotation device, and the rotation device includes: a first carrier connected to a sample; a drive portion connected to the first carrier, wherein the drive portion is configured to drive the first carrier to rotate; and the first carrier drives the sample to rotate from an initial position to a target position; an acquisition device, configured to acquire a rotation state of the sample; and a control unit, electrically connected to the drive portion, and configured to control operation of the drive portion.

The invention concerns a crucible assembly for physical vapor deposition on a surface comprising: a base (22) to support and drive in rotation a crucible (18) around a rotational axis (A), the base comprising a base upper surface (34) having a first alignment relief (30), a crucible (18) comprising: at least one cavity (24) disposed at a peripheral area (38) of the crucible (18) with regard to the rotational axis (A), a crucible bottom surface (25) intended to contact the base upper surface (34) of the base (22), the crucible bottom surface (25) having a second alignment relief (32) which is complementary shaped with regard to the first alignment relief (30), the second (32) alignment relief being disposed at a central area (36) of the crucible (18) with regard to the rotation axis (A).

A method of scanning a substrate includes immobilizing a substrate on a substrate holder within a processing chamber and performing a pass of a parallel raster pattern by synchronously driving a first rotary drive and a second rotary drive to move the substrate relative to a processing apparatus focused on a localized spot on the substrate, the first rotary drive being coupled to a proximal end of a pendulum arm and the second rotary drive being mounted at a distal end of the pendulum arm and to the substrate holder. Driving the first rotary drive during the pass includes moving the pendulum arm in a first arc motion for a first portion of the pass while the localized spot is on the substrate, and then moving the pendulum arm in an opposite second arc motion for a second portion of the pass while the localized spot is on the substrate.

A deposition apparatus including: a processing chamber; a rotary table provided in the processing chamber; a first processing region provided at a predetermined position in a circumferential direction of the rotary table; a second processing region provided downstream of the first processing region in the circumferential direction of the rotary table; a third processing region provided downstream of the second processing region in the circumferential direction of the rotary table; a first heater provided above the rotary table in the second processing region; and a plasma generator. The plasma generator includes: a protrusion having a longitudinally elongated shape in a planar view extending along a radius of the rotary table in a portion of an upper surface of the processing chamber, and protruding upward from the upper surface; and a coil wound along a side surface of the protrusion and has a longitudinally elongated shape in a planar view.

A semiconductor machine system comprises a plurality of working chambers, wherein the working chambers process materials separately; a control host coupled to the plurality of working chambers, comprising: a main control module coupled to the plurality of working chambers; an analog control module coupled to the plurality of working chambers, and the analog control module is detachably coupled to one or more external devices by serial interface coupling; a digital control module coupled to the plurality of working chambers, and the main control module, the analog control module and the digital control module are coupled to each other; and a plurality of operating units coupled to at least one of the main control module, the analog control module and the digital control module, respectively, to control the plurality of working chambers for processing the materials by the main control module, the analog control module and the digital control module.

A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter. The wafer is heated to a temperature of more than 200° C. The wafer is a semiconductor wafer including SiC, and the ion beam includes aluminum ions.

Systems and methods for automated sample alignment for microscopy are described herein. In one aspect a method can include: rotating the sample along a first axis by each of a plurality of rotation angles; imaging, with a charged particle beam, the sample for each rotation angle; and determining a first rotation angle based on the image for each rotation angle, wherein the first rotation angle aligns the sample to the charged particle beam in relation to the first axis; and determining a second rotation angle based on the first rotation angle, where the second rotation angle aligns the sample to the charged particle beam in relation to a second axis, and where the second axis is orthogonal to the first axis

A substrate processing apparatus includes: a vacuum transfer chamber including a substrate transfer mechanism provided in a vacuum transfer space thereof to collectively hold and transfer substrates with a substrate holder; and a processing chamber having processing spaces and connected to the vacuum transfer chamber. The processing chamber includes a loading/unloading port provided on a side of the vacuum transfer chamber to allow the vacuum transfer space and the processing spaces to communicate with each other. The processing spaces include a first processing space in which a first process is performed on the substrate and a second processing space in which a second process is performed on the substrate subjected to the first process. The first and second processing spaces are arranged in a direction in which the substrate is loaded and unloaded, and the substrate holder has a length that extends over the first and second processing spaces.

A sample holder system for holding a microscopic sample in a microscope system comprises a first and a second rotation element, which are rotatably connected to one another. The side surfaces of the two rotation elements in each case enclose an angle α, with the result that the rotation elements have a wedge-shaped cross section. The second rotation element is configured to receive a sample, while the first rotation element can be rotatably connected to a holder receiving surface. The rotation elements are each rotatable by an angle β about a rotation axis. The inclination of the third side surface on which the sample can be received is settable by combining all of the involved angles α and β.