Patent classifications
H01J2237/20278
Multi-Zone Platen Temperature Control
A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a plurality of independently controlled thermal zones so that the temperature of different regions of the workpiece may be separately controlled. In certain embodiments, etch rate uniformity may be a function of distance from the center of the workpiece, also referred to as radial non-uniformity. Further, when the workpiece is scanned, there may also be etch rate uniformity issues in the translated direction, referred to as linear non-uniformity. The present workpiece holder comprises a plurality of independently controlled thermal zones to compensate for both radial and linear etch rate non-uniformity.
SEMICONDUCTOR MACHINE SYSTEM AND MANUFACTURING METHOD USING THEREOF
A semiconductor machine system comprises a plurality of working chambers, wherein the working chambers process materials separately; a control host coupled to the plurality of working chambers, comprising: a main control module coupled to the plurality of working chambers; an analog control module coupled to the plurality of working chambers, and the analog control module is detachably coupled to one or more external devices by serial interface coupling; a digital control module coupled to the plurality of working chambers, and the main control module, the analog control module and the digital control module are coupled to each other; and a plurality of operating units coupled to at least one of the main control module, the analog control module and the digital control module, respectively, to control the plurality of working chambers for processing the materials by the main control module, the analog control module and the digital control module.
Systems and methods of clamp compensation
A method of producing a compensation signal to compensate for misalignment of a drive unit clamp element can include applying a clamp element drive signal to a drive unit clamp element to engage a mover element. A first displacement of the mover element can be determined. A first compensation signal to be applied to one or more drive unit shear elements can be determined based at least in part on the first displacement. The first compensation signal can be applied to the one or more drive unit shear elements and the clamp element drive signal can be applied to the drive unit clamp element. A second displacement can be determined in response to the application of the first compensation signal and the clamp element drive signal. The second displacement can then be compared to a preselected threshold. For a second displacement less than the preselected threshold, combining the first compensation signal with an initial shear element drive signal to produce a modified shear element drive signal, and for a second displacement greater than the preselected threshold, determining a second compensation signal to be applied to the one or more drive unit shear elements.
SUBSTRATE PROCESSING SYSTEM
Embodiments disclosed herein generally relate to a system and, more specifically, a substrate processing system. The substrate processing system includes one or more cooling systems. The cooling systems are configured to lower and/or control the temperature of a body of the substrate processing system. The cooling systems include features to cool the body disposed in the substrate processing system using gas and/or liquid cooling systems. The cooling systems disclosed herein can be used when the body is disposed at any height.
SUBSTRATE SUPPORTS, SEMICONDUCTOR PROCESSING SYSTEMS HAVING SUBSTRATE SUPPORTS, AND METHODS OF MAKING SUBSTRATE SUPPORTS FOR SEMICONDUCTOR PROCESSING SYSTEMS
A substrate support includes a heater body, a heater element, and a heater terminal. The heater body is formed from a ceramic material and has upper and lower surfaces separated by a thickness. The heater element is arranged between the upper and lower surfaces and is embedded within the ceramic material forming the heater body. The heater terminal is arranged between the upper and lower surfaces, is electrically connected to the heater element, and has an electrode surface and a rounded surface. The electrode surface opposes the lower surface to flow an electric current to the heater element. The rounded surface opposes the upper surface and is embedded within the ceramic material to limit stress within the ceramic material during heating of a substrate seated on the upper surface of the heater body. Semiconductor processing systems and methods of making substrate supports for semiconductor processing systems are also described.
Plasma processing system and operating method of the same
Embodiments of the present disclosure provide a plasma processing system, comprising: a transfer chamber, the transfer chamber including a plurality of sidewalls, each sidewall being connected with a plurality of process chambers; each process chamber including a base therein, the base including a central point; wherein at least two process chambers connected to a same sidewall form one process chamber group, wherein a first distance is provided between the central points of two bases in a first process chamber group, and a second distance is provided between the central points of two bases in a second process chamber group, the first distance being greater than the second distance; and the transfer chamber comprises a mechanical transfer device; a rotating pedestal includes two independently movable robot arms thereon, the two robot arms; and the two robot arms both include a plurality of rotating shafts and a plurality of rotating arms, wherein a remote rotating arm of each robot arm further includes an end effector for holding a substrate. The mechanical transfer device according to the present disclosure may simultaneously retrieve and place the substrate in the process chamber group with the first distance and the substrate in the process chamber group with the second distance.
Electron Beam Inspection System
There is provided an electron beam inspection system which can enhance the safety of the whole system if servo valves are deactivated in the event of a power failure or an emergency stop. The electron beam inspection system has a beam source, a stage mechanism, and a pump. The stage mechanism has a guide shaft, a slider, a first servo valve, a second servo valve, a first exhaust pipe, a second exhaust pipe, and an exhaust valve. The slider is movably supported to the guide shaft via a hydrostatic bearing and has a first pressure subchamber and a second pressure subchamber. The exhaust valve is mounted in the first exhaust pipe. When the servo valves are in operation, the exhaust valve is opened. When supply of electric power to the servo valves is ceased, the exhaust valve is closed.
SYSTEMS AND METHODS FOR MEDICAL PACKAGING
Exemplary methods of forming a coating of material on a substrate may include forming a plasma of a first precursor and an oxygen-containing precursor. The first precursor and the oxygen-containing precursor may be provided in a first flow rate ratio. The methods may include depositing a first layer of material on the substrate. While maintaining the plasma, the methods may include adjusting the first flow rate ratio to a second flow rate ratio. The methods may include depositing a second layer of material on the substrate.
SYSTEMS AND METHODS OF CLAMP COMPENSATION
A method of producing a compensation signal to compensate for misalignment of a drive unit clamp element can include applying a clamp element drive signal to a drive unit clamp element to engage a mover element, determining a first displacement of the mover element, and determining a first compensation signal based at least in part on the first displacement. The method can further comprise applying the first compensation signal to the drive unit shear elements and the clamp element drive signal to the drive unit clamp element and determining a second displacement of the mover element. If the second displacement is less than a preselected threshold, the first compensation signal can be combined with an initial shear element drive signal to produce a modified shear element drive signal. If the second displacement is greater than the preselected threshold, a second compensation signal can be determined.
SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD
The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having an entrance for taking in and taking out a substrate at a side wall; a support unit provided inside of the chamber and supporting the substrate; an imaging unit for imaging a substrate being taken in by a transfer robot through the entrance; and a controller is configured to control a position of the transfer robot based on an image data from the imaging unit.