A multi-beam charged particle inspection system and a method of operating a multi-beam charged particle inspection system for wafer inspection can provide high throughput with high resolution and high reliability. The method and the multi-beam charged particle beam inspection system can be configured to extract from a plurality of sensor data a set of control signals to control the multi-beam charged particle beam inspection system and thereby maintain the imaging specifications including a movement of a wafer stage during the wafer inspection task.

A nanoscale positioning system for positioning a positionable component includes a motion platform including a first end, a second end, a shuttle positioned between the first end and the second end and configured to support the positionable component, a flexure member, and a fluid passage extending through the flexure member from the first end to the second end of the motion platform, and a pressure controller coupled to the motion platform and fluidically connected to the fluid passage, wherein the pressure controller is configured to selectably provide a fluid pressure in the fluid passage to flex the flexure member whereby the shuttle is displaced along a motion axis of the motion platform.

The present invention provides: a stage device that can suppress bending deformation of a mirror, and that can reduce the positioning error of a stage by reducing the measurement error of the position of the stage; and a charged particle beam device comprising this stage device. The stage device according to the present invention comprises: a table (105) on which a sample (106) is placed; a bar mirror (111) installed on the table (105); a laser interferometer (104) that irradiates the bar mirror (111) with laser light and receives reflected light from the bar mirror (111), thereby measuring the position of the table (105); a drive mechanism (103) that moves the table (105); and a plurality of elastic members (203) installed between the bar mirror (111) and the table (105)

A 3D nanoprinter electron beam lithography module for a lithography system, such as a scanning electron microscope (SEM) or an environmental SEM (ESEM) with a beam blanker and electron beam lithography attachment, but generally applicable to any electron beam lithography capable system. The module is comprised of an in-situ spin-coating stage that is compatible with a cooling-SEM stage, with a spin-coating motor, a spin-coating sample stub, a liquid waste collector cup, a liquid dispensing arm holding a tube bundle that is connected via tubing to micro-syringe pumps or a pressure driven flow controller or pumps connected to fluid reservoirs, an electron beam scan generator control box, electrical feedthroughs, control electronics, and a computing system responsible for controlling the entire module. The dispensing arm can be controlled by a servo motor.

A semiconductor analysis system includes a machining device that machines a semiconductor wafer to prepare a thin film sample for observation, a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample, and a host control device that controls the machining device and the transmission electron microscope device. The host control device evaluates the thin film sample based on the transmission electron microscope image, updates acquisition conditions of the transmission electron microscope image based on an evaluation result of the thin film sample, and outputs the updated acquisition conditions to the transmission electron microscope device

The mark position is measured with a multi-beam with high accuracy. A multi charged particle beam writing method includes forming a multi-beam (30a-30e) in which charged particle beams are arranged with a predetermined pitch, irradiating a mark (M) with beams in an on-beam region while shifting irradiation positions of the charged particle beams by sequentially changing the on-beam region in which beams in a partial region of the multi-beam (30a-30e) are set to ON, the mark (M) being provided at a predetermined position and having a width greater than the predetermined pitch, detecting a reflected charged particle signal from the mark (M), and calculating a position of the mark (M), and adjusting the irradiation positions of the multi-beam based on the calculated position of the mark (M), and writing a pattern.

An improved leveling sensor and method for adjusting a sample height in a charged-particle beam inspection system are disclosed. An improved leveling sensor comprises a light source configured to project a first pattern onto a sample and a detector configured to capture an image of a projected pattern after the first pattern is projected on the sample. The first pattern can comprise an irregularity to enable a determination of a vertical displacement of the sample.

The present invention relates to a process and apparatus for the preparation of a bonded substrate. More particularly, the present invention relates to a PDMS bonding apparatus. More specifically, the present invention relates to a PDMS bonding apparatus which uses plasma to bond PDMS to a substrate.

The present invention discloses a PDMS bonding apparatus and process for using said apparatus, the apparatus comprising: a process chamber (100) forming a sealed processing space (S) for bonding of PDMS (polydimethylsiloxane); a first support (200) installed in the process chamber (100) and which supports the PDMS (1); a second support (300) installed in the process chamber (100) opposing the first support (200) and which supports a bonding object (2) which is bonded to the PDMS (1); a gas injection unit (400) which ejects process gas between the first support (200) and the second support (300), and; a plasma generator (500) which creates a plasma atmosphere within the process chamber (100).

Apparatuses and methods for automated grid validation are disclosed herein. An example method at least includes imaging a grid, the grid including a support portion and a plurality of posts extending from the support portion, wherein each post of the plurality of posts has a designated weld location, and determining, based on the image, whether the designated weld location of each post of the plurality of posts is valid.

Provided is a technique capable of shortening observation throughput of a sample. A transfer device 2 includes a holder 24 configured to hold a mesh MS on which a sample to be analyzed using a charged particle beam device 3 is mounted, a position information acquisition function configured to acquire first information about a positional relationship between the mesh MS and the holder 24, and a position information output function configured to output the first information to the charged particle beam device 3.