Using a segmented detector having detection regions enables an observation of atoms in a specimen with a high contrast. A scanning transmission electron microscope system 100 scans an electron beam EB over a specimen S, uses a segmented detector 105 having detection regions disposed in a bright-field area to detect electrons transmitted through and scattered from the specimen S for each detection region, generates segmented images based on results of detecting the electrons in the detection regions, and applies filters determined based on a signal-to-noise ratio to the segmented images to generate a reconstructed image. The signal-to-noise ratio is proportional to an absolute value of a total phase contrast transfer function normalized by a noise level, the total phase contrast transfer function being defined by product-sum operation of complex phase contrast transfer functions and weight coefficients for the detection regions. The filters are determined based on the weight coefficients that yield a maximum of the signal-to-noise ratio.

A method and a system are for sparse sampling utilizing a programmatically randomized signal for modulating a carrier signal. The system includes a compound sparse sampling pattern generator that generates at least one primary carrier signal, and at least one secondary signal. The at least one secondary signal modulates the at least one primary signal in a randomized fashion.

Provided is a sample image observation device including an SEM and a control system configured to control the SEM. An observation region of a sample is divided into a plurality of sections, and restoration processing is performed on an image which is acquired by irradiating each section with a sparse electron beam, based on scanning characteristics in the section. A reduction in quality of a restored image due to a beam irradiation position deviation caused by a scanning response is prevented and restoration with high accuracy and high throughput under a condition for preventing sample damage is possible.

Provided is an electron microscope for generating a montage image by acquiring images of a plurality of regions in a montage image capturing region set on a specimen, and by connecting the acquired images. The electron microscope includes a specimen surface height calculating unit that calculates a distribution of specimen surface heights in the montage image capturing region by performing curved surface approximation based on the specimen surface heights determined by performing focus adjustment at a plurality of points set in a region including the montage image capturing region, and an image acquiring unit that acquires the images of the plurality of regions based on the calculated distribution of the specimen surface heights.

The present invention relates to a method for acquiring tomographic images of a sample in a microscopy system, wherein the sample comprises a defined region, and wherein the method comprises determining a location in three-dimensional space of the defined region, wherein the method further comprises capturing an image of at least a part of the sample, and wherein the determination of the location in three-dimensional space of the defined region is based, at least in part, on the image of the part of the sample. The present invention also relates to a corresponding microscopy system and a computer program product to perform the method according to the present invention.

Disclosed herein are methods, apparatuses, systems, and computer-readable media related to defective pixel management in charged particle microscopy. For example, in some embodiments, a charged particle microscope support apparatus may include: first logic to identify a defective pixel region of a charged particle camera, wherein the charged particle camera cannot detect charged particle events in the defective pixel region; second logic to generate a first charged particle event indicator that identifies a first time and a first location of a first charged particle event outside the defective pixel region, wherein the first charged particle event is detected by the charged particle camera; third logic to generate a second charged particle event indicator that identifies a second time and a second location in the defective pixel region; and fourth logic to output data representative of the charged particle event indicators.

Disclosed herein are CPM support systems, as well as related apparatuses, methods, computing devices, and computer-readable media. For example, in some embodiments, a charged particle microscope computational support apparatus may include: first logic to, for each angle of a plurality of angles, receive an associated image of a specimen at the angle, and generate an associated scan mask based on one or more regions-of-interest in the associated image; second logic to, for each angle of the plurality of angles, generate an associated data set of the specimen by processing data from a scan, in accordance with the associated scan mask, by a charged particle microscope of the specimen at the angle; and third logic to provide, for each angle of the plurality of angles, the associated data set of the specimen to reconstruction logic to generate a three-dimensional reconstruction of the specimen.

The present disclosure relates to dual beam device and three-dimensional circuit pattern inspection techniques by cross sectioning of inspection volumes with large depth extension exceeding 1 μm below the surface of a semiconductor wafer, as well as methods, computer program products and apparatuses for generating 3D volume image data of a deep inspection volume inside a wafer without removal of a sample from the wafer. The disclosure further relates to 3D volume image generation and cross section image alignment methods utilizing a dual beam device for three-dimensional circuit pattern inspection.

A charged particle beam apparatus acquires a scanned image by scanning a specimen with a charged particle beam, and detecting charged particles emitted from the specimen. The apparatus includes a charged particle beam source that emits the charged particle beam; an irradiation optical system that scans the specimen with the charged particle beam; a plurality of detection units that detects the charged particles emitted from the specimen; and an image processing unit that reconstructs a profile of a specimen surface of the specimen, based on a plurality of detection signals outputted from the plurality of detection units. The image processing unit: determines an inclination angle of the specimen surface, based on the plurality of detection signals; processing to determine a height of the specimen surface, based on the scanned image; and reconstructs the profile of the specimen surface, based on the inclination angle and the height.

A wafer inspection system is disclosed. According to certain embodiments, the system includes an electron detector that includes circuitry to detect secondary electrons or backscattered electrons (SE/BSE) emitted from a wafer. The electron beam system also includes a current detector that includes circuitry to detect an electron-beam-induced current (EBIC) from the wafer. The electron beam system further includes a controller having one or more processors and a memory, the controller including circuitry to: acquire data regarding the SE/BSE; acquire data regarding the EBIC; and determine structural information of the wafer based on an evaluation of the SE/BSE data and the EBIC data.