H01J2237/244

Particle beam system for adjusting the current of individual particle beams

A particle beam system includes: a particle source to generate a beam of charged particles; a first multi-lens array including a first multiplicity of individually adjustable and focusing particle lenses so that at least some of the particles pass through openings in the multi-lens array in the form of a plurality of individual particle beams; a second multi-aperture plate including a multiplicity of second openings downstream of the first multi-lens array so that some of the particles which pass the first multi-lens array impinge on the second multi-aperture plate and some of the particles which pass the first multi-lens array pass through the openings in the second multi-aperture plate; and a controller configured to supply an individually adjustable voltage to the particle lenses of the first multi-lens array and thus individually adjust the focusing of the associated particle lens for each individual particle beam.

DEFECTIVE PIXEL MANAGEMENT IN CHARGED PARTICLE MICROSCOPY
20230005702 · 2023-01-05 · ·

Disclosed herein are methods, apparatuses, systems, and computer-readable media related to defective pixel management in charged particle microscopy. For example, in some embodiments, a charged particle microscope support apparatus may include: first logic to identify a defective pixel region of a charged particle camera, wherein the charged particle camera cannot detect charged particle events in the defective pixel region; second logic to generate a first charged particle event indicator that identifies a first time and a first location of a first charged particle event outside the defective pixel region, wherein the first charged particle event is detected by the charged particle camera; third logic to generate a second charged particle event indicator that identifies a second time and a second location in the defective pixel region; and fourth logic to output data representative of the charged particle event indicators.

APPARATUS TO DETECT AND QUANTIFY RADICAL CONCENTRATION IN SEMICONDUCTOR PROCESSING SYSTEMS
20220392812 · 2022-12-08 ·

Embodiments disclosed herein include a processing tool for measuring neutral radical concentrations. In an embodiment, the processing tool comprises a processing chamber, and a neutral radical mass spectrometry (NRMS) analyzer fluidically coupled to the processing chamber. In an embodiment, the NRMS analyzer comprises a first chamber fluidically coupled to the processing chamber, where the first chamber comprises a modulator, and a second chamber fluidically coupled to the first chamber, where the second chamber is a residual gas analyzer or a mass spectrometer. In an embodiment, an unobstructed line of sight passes from the processing chamber to the second chamber.

SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING SYSTEM
20220384147 · 2022-12-01 · ·

Disclosed is a substrate treating apparatus. The substrate treating apparatus includes an index part having a load port, and a process executing part that receives a substrate from the index part and treats the substrate, the load port includes a housing having an interior space, a seating part disposed on an upper side of the housing, and on which a container that receives a substrate type sensor is positioned, and a charging unit that charges a power source device installed in the container in a wireless charging scheme.

CHARGED PARTICLE ASSESSMENT TOOL, INSPECTION METHOD
20230054632 · 2023-02-23 · ·

A charged particle assessment tool including: an objective lens configured to project a plurality of charged particle beams onto a sample, the objective lens having a sample-facing surface defining a plurality of beam apertures through which respective ones of the charged particle beams are emitted toward the sample; and a plurality of capture electrodes, each capture electrode adjacent a respective one of the beam apertures, configured to capture charged particles emitted from the sample.

Electron Microscope and Specimen Contamination Prevention Method
20220328280 · 2022-10-13 ·

A contamination prevention irradiation device includes a generation unit and a mirror unit. The generation unit generates a laser beam. The mirror unit has a mirror surface for reflecting a laser beam. The laser beam reflected on the mirror surface is applied to a specimen disposed inside an objective lens. The laser beam is composed of a pulse train. Once a laser beam is applied to the specimen before observation of the specimen, deposition of contaminants on the specimen can be prevented for a predetermined subsequent period.

Apparatus of charged-particle beam such as scanning electron microscope comprising plasma generator, and method thereof

The present invention provides an apparatus of charged-particle beam e.g. an electron microscope comprising a plasma generator for selectively cleaning BSE detector. In various embodiments, the plasma generator is located between a sample stage and a sample table having one or more openings or holes. The plasma generator generates plasma and distributes or dissipates the plasma through the openings of the sample table toward and onto surface of the BSE detector. Cleaning contaminants on the surface of the BSE detector frequently and selectively with in-situ generated plasma can prevent the detectors from performance deterioration such as losing resolution and contrast in imaging at high levels of magnification.

ATOM PROBE WITH VACUUM DIFFERENTIAL
20170372868 · 2017-12-28 ·

In an atom probe having a vacuum chamber containing a specimen mount and a detector for receiving ions emitted from the specimen, a high vacuum subchamber is provided about the specimen mount, with an aperture in the subchamber allowing passage of emitted ions to the detector. The high vacuum subchamber may be pumped to higher vacuum (lower pressure) than the vacuum chamber, and so long as the pressure in the vacuum chamber is below about 10.sup.−1 Pa, very little gas diffusion takes place through the aperture, allowing higher vacuum to be maintained in the subchamber despite the aperture opening to the chamber. The higher vacuum in the subchamber about the specimen assists in reducing noise in atom probe image data. The aperture may conveniently be provided by the aperture in a counter electrode, such as a local electrode, as commonly used in atom probes.

Defective pixel management in charged particle microscopy
11742175 · 2023-08-29 · ·

Disclosed herein are methods, apparatuses, systems, and computer-readable media related to defective pixel management in charged particle microscopy. For example, in some embodiments, a charged particle microscope support apparatus may include: first logic to identify a defective pixel region of a charged particle camera, wherein the charged particle camera cannot detect charged particle events in the defective pixel region; second logic to generate a first charged particle event indicator that identifies a first time and a first location of a first charged particle event outside the defective pixel region, wherein the first charged particle event is detected by the charged particle camera; third logic to generate a second charged particle event indicator that identifies a second time and a second location in the defective pixel region; and fourth logic to output data representative of the charged particle event indicators.

Adjustment method and electron beam device

An adjustment method for adjusting a path of an electron beam passing through an electron beam device including at least one unit having at least one lens and at least one aligner electrode, and a detector configured to detect the electron beam, the method including: a step of measuring, by a coordinate measuring machine, an assembly tolerance for each of a plurality of the units constituting the electron beam device; a step of determining a shift amount of the electron beam at a position of the at least one of the lenses; a step of determining an electrode condition for each of a plurality of the aligner electrodes included in the units in a manner such that a shift amount of the electron beam is to be the determined shift amount; and a step of setting each of the aligner electrodes to the corresponding determined electrode condition.