An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.

Provided is a charged particle beam device capable of improving the accuracy of measurement and processing. The charged particle beam device includes an electrostatic chuck that adsorbs an inspection object, a voltage generation unit that generates a voltage to be supplied to the electrostatic chuck, and a state determination unit that determines a state of the inspection object. Here, the state determination unit includes a current waveform simulation unit that simulates a time-series change of an electrostatic chuck current flowing through the voltage generation unit when the electrostatic chuck normally adsorbs the inspection object, a difference integration unit that acquires an integration value of a difference between a time-series change of a simulation current generated by the current waveform simulation unit and the time-series change of the electrostatic chuck current flowing through the voltage generation unit, and a difference determination unit that determines an adsorption state of the inspection object and a shape feature of the inspection object based on the integration value of the difference.

An ion beam profiling system include a beam profiling element, an ion sensitive element electrically isolated from the beam profiling element, an ion source configured to emit an ion beam at the beam profiling element and the ion sensitive element, and a current measuring device coupled to the ion sensitive element. The beam profiling element includes a plate of material having two parallel major surfaces, a first slit aperture extending through the plate of material and having a first longitudinal length extending in a direction parallel to the two parallel major surfaces, and a second slit aperture extending through the plate of material and having a second longitudinal length extending in a direction parallel to the two parallel major surfaces, wherein the first longitudinal length of the first slit aperture is perpendicular to the second longitudinal length of the second slit aperture.

An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.

Provided is a charged particle beam device capable of improving the accuracy of measurement and processing. The charged particle beam device includes an electrostatic chuck that adsorbs an inspection object, a voltage generation unit that generates a voltage to be supplied to the electrostatic chuck, and a state determination unit that determines a state of the inspection object. Here, the state determination unit includes a current waveform simulation unit that simulates a time-series change of an electrostatic chuck current flowing through the voltage generation unit when the electrostatic chuck normally adsorbs the inspection object, a difference integration unit that acquires an integration value of a difference between a time-series change of a simulation current generated by the current waveform simulation unit and the time-series change of the electrostatic chuck current flowing through the voltage generation unit, and a difference determination unit that determines an adsorption state of the inspection object and a shape feature of the inspection object based on the integration value of the difference.

An ion beam profiling system include a beam profiling element, an ion sensitive element electrically isolated from the beam profiling element, an ion source configured to emit an ion beam at the beam profiling element and the ion sensitive element, and a current measuring device coupled to the ion sensitive element. The beam profiling element includes a plate of material have two parallel major surfaces, a first slit aperture extending through the plate of material and having a first longitudinal length extending in a direction parallel to the two parallel major surfaces, and a second slit aperture extending through the plate of material and having a second longitudinal length extending in a direction parallel to the two parallel major surfaces, wherein the first longitudinal length of the first slit aperture is perpendicular to the second longitudinal length of the second slit aperture.

An apparatus includes an electron source coupled to provide an electron beam, a beam deflector arranged to provide a pulsed electron beam from the electron beam, a detector arranged to receive the pulsed electron beam after transmitting through a sample, and a controller coupled to control at least the beam deflector and the detector, the controller coupled to or including code that, when executed by the controller, causes the apparatus to establish the pulsed electron beam with pulse characteristics based on control of at least the beam deflector, wherein an illumination window is formed based on the pulse characteristics, the illumination window being a time frame when the sample is illuminated with a pulse of the pulsed electron beam, and to form a detection window for the detector and synchronize the detection window in relation to the illumination window, wherein detection events occurring in the detection window form the basis of an image, wherein the detection window determines a time frame when the detector converts the pulse of the pulsed electron beam transmitted through the sample to an electron induced signal.

A scanning electron microscope. The scanning electron microscope may include a sliding vacuum seal between the electron optical imaging system and the sample carrier with a first plate having a first aperture associated with the electron optical imaging system and resting against a second plate having a second aperture associated with the sample carrier. The first plate and/or the second plate includes a groove circumscribing the first and/or second aperture. The scanning electron microscope may include a detector movable relative to the electron beam. The scanning electron microscope may include a motion control unit for moving a sample carrier along a collision free path.

A scanning electron microscope. The scanning electron microscope may include a sliding vacuum seal between the electron optical imaging system and the sample carrier with a first plate having a first aperture associated with the electron optical imaging system and resting against a second plate having a second aperture associated with the sample carrier. The first plate and/or the second plate includes a groove circumscribing the first and/or second aperture. The scanning electron microscope may include a detector movable relative to the electron beam. The scanning electron microscope may include a motion control unit for moving a sample carrier along a collision free path.

Embodiments of the disclosure include apparatus and methods for modifying a surface of a substrate using a surface modification process. The process of modifying a surface of a substrate generally includes the alteration of a physical or chemical property and/or redistribution of a portion of an exposed material on the surface of the substrate by use of one or more energetic particle beams while the substrate is disposed within a particle beam modification apparatus. Embodiments of the disclosure also provide a surface modification process that includes one or more pre-modification processing steps and/or one or more post-modification processing steps that are all performed within one processing system.