A difference between a calculated amount of drift and an actual amount of drift is reduced. According to one aspect of the present invention, a charged particle beam writing apparatus includes a deflector adjusting an irradiation position of the charged particle beam with respect to a substrate placed on a stage, a shot data generator generating shot data from writing data, the shot data including a shot position and beam ON and OFF times for each shot, a drift corrector referring to a plurality of pieces of the generated shot data, calculating an amount of drift of the irradiation position of the charged particle beam with which the substrate is irradiated, and generating correction information for correcting an irradiation position deviation based on the amount of drift, a deflection controller controlling a deflection amount achieved by the deflector based on the shot data and the correction information, and a dummy irradiation instructor instructing execution of dummy irradiation in a writing process to irradiate with the charged particle beam in a predetermined irradiation amount at a position different from the substrate on the stage.

A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a portion that extends beyond the workpiece, referred to as a halo. The halo may be independently heated to compensate for etch rate non-uniformities. In some embodiments, the halo may be independently biased such that its potential is different from the potential applied to the workpiece. In certain embodiments, the halo may be divided into a plurality of thermal zones that can be separately controlled. In this way, various etch rate non-uniformities may be addressed by controlling the potential and/or temperature of the various thermal zones of the halo.

In one embodiment, a multi charged-particle beam writing apparatus includes a plurality of blankers switching between ON and OFF state of a corresponding beam among multiple beams, a main deflector deflecting beams having been subjected to blanking deflection to a writing position of the beams in accordance with movement of a stage, a detector scanning a mark on the stage with each of the beams having been deflected by the main deflector and detecting a beam position from a change in intensity of reflected charged particles and a position of the stage, and a beam shape calculator switching an ON beam, scanning the mark with the ON beam, and calculating a shape of the multiple beams from a beam position. A shape of a deflection field of the main deflector is corrected by using a polynomial representing an amount of beam position shift that is dependent on a beam deflection position of the main deflector and then the mark is scanned with the ON beam. The polynomial is different for each ON beam.

A multi charged particle beams exposure method includes assigning, with respect to plural times of shots of multi-beams using a charged particle beam, each shot to one of plural groups, depending on a total current value of beams becoming in an ON condition in a shot concerned in the multi-beams, changing the order of the plural times of shots so that shots assigned to the same group may be continuously emitted for each of the plural groups, correcting, for each group, a focus position of the multi-beams to a focus correction position for a group concerned corresponding to the total current value, and performing the plural times of shots of the multi-beams such that the shots assigned to the same group are continuously emitted in a state where the focus position of the multi-beams has been corrected to the focus correction position for the group concerned.

A beam current density distribution adjustment device is provided. The device includes member pairs in a long side direction of a ribbon beam, the member pairs adjusting a beam current density distribution in the long side direction of the ribbon beam by using an electric field or a magnetic field, members of each of the member pairs being disposed with the ribbon beam in-between the members. Opposing surfaces of the member pairs adjacent to each other in the long side direction of the ribbon beam are partially not parallel to a traveling direction of the ribbon beam.

A charged particle beam writing method includes acquiring a pair of a reference dose and a backscatter coefficient for proximity effect correction using a first settling time, acquiring a first relation between a temperature rise amount and a critical dimension variation amount using a second settling time shorter than the first settling time, the backscatter coefficient and the reference dose acquired, calculating a temperature correction parameter depending on a temperature rise amount, for correcting a dose, by using the first relation, and a second relation on a dose and a pattern critical dimension in a case of using the first settling time, calculating a beam irradiation dose by the reference dose and a dose coefficient obtained from the backscatter coefficient of the pair acquired, and the temperature correction parameter, and writing a pattern with a beam based on the dose calculated using the second settling time.

Drift correction is performed with high accuracy while reducing the calculation amount. According to one aspect of the present invention, a charged particle beam writing apparatus includes an emitter emitting a charged particle beam, a deflector adjusting an irradiation position of the charged particle beam with respect to a substrate placed on a stage, a shot data generator generating shot data from writing data, the shot data including a shot size, a shot position, and a beam ON⋅OFF time per shot, a drift corrector referring to a plurality of pieces of the shot data for every predetermined area irradiated with the charged particle beam, or for every predetermined number of shots of the charged particle beam irradiated, calculating a drift amount of the irradiation position of the charged particle beam with which the substrate is irradiated, based on the shot size, the shot position and the beam ON⋅OFF time, and generating correction information for correcting an irradiation position displacement based on the drift amount, and a deflection controller controlling a deflection amount achieved by the deflector based on the shot data and the correction information.

A thin-sample-piece fabricating device is provided with a focused-ion-beam irradiation optical system, a stage, a stage driving mechanism, and a computer. The focused-ion-beam irradiation optical system performs irradiation with a focused ion beam (FIB). The stage holds a sample piece (Q). The stage driving mechanism drives the stage. The computer sets a thin-piece forming region serving as a treatment region, as well as a peripheral section surrounding the entire periphery of the thin-piece forming region, on the sample piece (Q). The computer causes irradiation with the focused ion beam (FIB) from a direction crossing the irradiated face of the sample piece (Q) so as to perform etching treatment such that the thickness of the thin-piece forming region becomes less than the thickness of the peripheral section.

An ion implanter includes a beam generation device that generates an ion beam with which a workpiece is irradiated, a control device that sets a plurality of operation parameters for controlling an operation of the beam generation device, a measurement device that measures at least one of beam characteristics of the ion beam, a storage device that accumulates data sets in each of which a set of set values of the plurality of operation parameters and a measurement value of the at least one of the beam characteristics of the ion beam are associated with each other, and an analysis device that generates a function for estimating the at least one of the beam characteristics from a set value of at least one of specific parameters included in the plurality of operation parameters, based on a plurality of the data sets accumulated in the storage device.

An ion implantation method includes generating a first scan beam, based on a first scan signal, measuring a beam current of the first scan beam by using a beam measurement device at a plurality of measurement positions, calculating a beam current matrix, based on a time waveform of the beam current measured by the beam measurement device and a time waveform of the scan command values determined in the first scan signal, calculating a first beam current density distribution of the first scan beam in a predetermined direction by performing time integration on the measured beam current, correcting a value of each component of the beam current matrix, based on the first beam current density distribution, and generating a second scan signal for realizing a target beam current density distribution in the predetermined direction, based on the corrected beam current matrix.