Patent classifications
H01J2237/31
ION SOURCE AND METHOD
An ion source can have: a multiplicity of electrodes, which are mounted electrically separated from one another and have: a first electrode, which has a depression; a second electrode, which is arranged in the depression; a third electrode, which partially covers the depression and through which a slit passes which exposes the second electrode; one or more than one magnet, which is designed to provide a magnetic field in the slit.
Ion source and method
An ion source can have: a multiplicity of electrodes, which are mounted electrically separated from one another and have: a first electrode, which has a depression; a second electrode, which is arranged in the depression; a third electrode, which partially covers the depression and through which a slit passes which exposes the second electrode; one or more than one magnet, which is designed to provide a magnetic field in the slit.
Broad-Energy Spectrum Electron Gun
Various embodiments of the present technology generally relate to devices and methods for generating and directing energetic electrons toward a target. More specifically, some embodiments relate to devices, systems, and methods for generating and directing energetic electrons based in the photoelectric effect and directing electric field-focused beams of the energetic electrons toward a target. Electron guns according to the present technology include one or more light sources to stimulate electron transmission, and a series of differentially charged stages to provide a hollow path allowing electrons generated by the photoelectric effect of the light irradiated on interior surfaces defining the path through the stages to travel to an exit of the electron gun. Each of the differentially charged stages have a different potential, thereby providing electrons having two or more different and tunable energy levels exiting as a beam from the electron gun.
Methods and apparatus for determining, using, and indicating ion beam working properties
Disclosed are embodiments of an ion beam sample preparation and coating apparatus and methods. A sample may be prepared in one or more ion beams and then a coating may be sputtered onto the prepared sample within the same apparatus. A vacuum transfer device may be used with the apparatus in order to transfer a sample into and out of the apparatus while in a controlled environment. Various methods to improve preparation and coating uniformity are disclosed including: rotating the sample retention stage; modulating the sample retention stage; variable tilt ion beam irradiating means, more than one ion beam irradiating means, coating thickness monitoring, selective shielding of the sample, and modulating the coating donor holder.
Methods and systems for plasma deposition and treatment
An ion beam treatment or implantation system includes an ion source emitting ion beams. The ion source includes a microwave source and a curved waveguide conduit having openings therein. The waveguide conduit is coupled to the microwave source for transmitting microwaves from the microwave source through the plurality of openings. The ion source also includes a curved plasma chamber in communication with the waveguide conduit through the openings. The plasma chamber receives through the openings microwaves from the waveguide conduit. The plasma chamber includes magnets disposed in an outer wall of the plasma chamber for forming a magnetic field in the plasma chamber. The plasma chamber further includes a charged cover at a side of the chamber opposite the side containing the openings. The cover includes extraction holes through which the ion beams are extracted.
Workpiece processing technique
Methods for processing of a workpiece are disclosed. The actual rate at which different portions of an ion beam can process a workpiece, referred to as the processing rate profile, is determined by measuring the amount of material removed from, or added to, a workpiece by the ion beam as a function of ion beam position. An initial thickness profile of a workpiece to be processed is determined. Based on the initial thickness profile, a target thickness profile, and the processing rate profile of the ion beam, a first set of processing parameters are determined. The workpiece is then processed using this first set of processing parameters. In some embodiments, an updated thickness profile is determined after the first process and a second set of processing parameters are determined. A second process is performed using the second set of processing parameters. Optimizations to improve throughput are also disclosed.
Array for processing materials
Materials (e.g., plant biomass, animal biomass, and municipal waste biomass) are processed to produce useful intermediates and products, such as energy, fuels, foods or materials. For example, systems equipment, and methods are described that can be used to treat feedstock materials, such as cellulosic and/or lignocellulosic materials, using an array of vaults.
UPGRADING PROCESS STREAMS
Biomass (e.g., plant biomass, animal biomass, and municipal waste biomass) is processed to produce useful intermediates and products, such as energy, fuels, foods or materials. Systems, methods and equipment are described for upgrading process streams using electrodialysis or electrodialysis reversal.
Processing materials
Materials, such as biomass feedstocks (e.g., plant biomass, animal biomass, and municipal waste biomass) are processed to produce useful products, such as fuels. Conveying systems, such as flowing gas conveying systems and such as closed-loop flowing gas conveying systems are described.
PROCESSING MATERIALS
Biomass feedstocks (e.g., plant biomass, animal biomass, and municipal waste biomass) are processed to produce useful products, such as fuels. For example, novel systems, methods and equipment for conveying and/or cooling treated biomass are described.