A method of depositing material over a sample in a deposition region of the sample with a charged particle beam column, the method comprising: positioning a sample within a vacuum chamber such that the deposition region is under a field of view of the charged particle beam column; cooling the deposition region by contacting the sample with a cyro-nanomanipulator tool in an area adjacent to the deposition region; injecting a deposition precursor gas into the vacuum chamber at a location adjacent to the deposition region; generating a charged particle beam with a charged particle beam column and focusing the charged particle beam on the sample; and scanning the focused electron beam across the localized region of the sample to activate molecules of the deposition gas that have adhered to the sample surface in the deposition region and deposit material on the sample within the deposition region

A 3D nanoprinter electron beam lithography module for a lithography system, such as a scanning electron microscope (SEM) or an environmental SEM (ESEM) with a beam blanker and electron beam lithography attachment, but generally applicable to any electron beam lithography capable system. The module is comprised of an in-situ spin-coating stage that is compatible with a cooling-SEM stage, with a spin-coating motor, a spin-coating sample stub, a liquid waste collector cup, a liquid dispensing arm holding a tube bundle that is connected via tubing to micro-syringe pumps or a pressure driven flow controller or pumps connected to fluid reservoirs, an electron beam scan generator control box, electrical feedthroughs, control electronics, and a computing system responsible for controlling the entire module. The dispensing arm can be controlled by a servo motor.

A sample stand includes a base portion that is made of a first material and has an arcuate outer edge in a plane having a first direction and a second direction orthogonal to the first direction, a first portion that is provided on an upper portion of the base portion in the second direction and in which a second material is embedded, a second portion that is provided on the upper portion of the base portion in the second direction and in which a third material is embedded, and a sample holding portion on which a sample is to be held. The sample holding portion is provided on the upper portion of the base portion in the second direction, between the first portion and the second portion in a third direction orthogonal to each of the first direction and the second direction.

The present disclosure relates to systems and methods of additive manufacturing that reduce or eliminates defects in the bulk deposition material microstructure resulting from the additive manufacturing process. An additive manufacturing system comprises evaporating a deposition material to form an evaporated deposition material and ionizing the evaporated deposition material to form an ionized deposition material flux. After forming the ionized deposition material flux, the ionized deposition material flux is directed through an aperture, accelerated to a controlled kinetic energy level and deposited onto a surface of a substrate. The aperture mechanism may comprise a physical, electrical, or magnetic aperture mechanism. Evaporation of the deposition material may be performed with an evaporation mechanism comprised of resistive heating, inductive heating, thermal radiation, electron heating, and electrical arc source heating.

Methods for repairing a defect of a lithographic mask with a particle beam are described. One such method can comprise the following steps: Processing the defect with the particle beam with a first set of processing parameters; processing the defect with the particle beam with a second set of processing parameters; wherein at least one parameter from the first set of processing parameters differs from the second set of processing parameters.

The present invention relates to an automatic sequence for repeatedly performing SEM observation and FIB processing by using a low acceleration voltage for a long time. In order to realize very accurate three-dimensional structure/composition analysis, in the automatic sequence for repeatedly performing sample observation using a scanning electron microscope using a CFE electron source and sample processing using a FIB device, low temperature flushing using the CFE electron source is performed at predetermined timing except for a SEM observation time. According to the present invention, the automatic sequence for repeatedly performing the sample observation using the scanning electron microscope using the CFE electron source and the sample processing using the FIB device can be performed for a long time. Therefore, it is possible to acquire a SEM image which achieves high resolution and improved current stability while the low acceleration voltage is used.

Beam-induced deposition decomposes a precursor at precise positions on a surface. The surface is processed to provide linker groups on the surface of the deposit, and the sample is processed to attach nano-objects to the linker groups. The nano-objects are used in a variety of application. When a charged particle beam is used to decompose the precursor, the charged particle beam can be used to form an image of the surface with the nano-objects attached.

The present application relates to an apparatus for processing a photolithographic mask, said apparatus comprising: (a) at least one time-varying particle beam, which is embodied for a local deposition reaction and/or a local etching reaction on the photolithographic mask; (b) at least one first means for providing at least one precursor gas, wherein the precursor gas is embodied to interact with the particle beam during the local deposition reaction and/or the local etching reaction; and (c) at least one second means, which reduces a mean angle of incidence (φ) between the time-varying particle beam and a surface of the photolithographic mask.

A deposition method is implemented in a focused ion beam system that supplies a compound gas to a specimen, and applies an ion beam to the specimen to deposit a deposition film, the deposition method including: a first deposition film-depositing step that deposits a first deposition film on the specimen using the ion beam that is defocused with respect to the specimen; and a second deposition film-depositing step that deposits a second deposition film on the first deposition film using the ion beam that is smaller in defocus amount than that used in the first deposition film-depositing step.

A beam processing system and method of operating are described. In particular, the beam processing system includes a beam source having a nozzle assembly that is configured to introduce a primary gas through the nozzle assembly to a vacuum vessel in order to produce a gaseous beam, such as a gas cluster beam, and optionally, an ionizer positioned downstream from the nozzle assembly, and configured to ionize the gaseous beam to produce an ionized gaseous beam. The beam processing system further includes a process chamber within which a substrate is positioned for treatment by the gaseous beam, and a secondary gas source, wherein the secondary gas source includes a secondary gas supply system that delivers a secondary gas, and a secondary gas controller that operatively controls the flow of the secondary gas injected into the beam processing system downstream of the nozzle assembly.