A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam configured to hit the target.

This invention pertains to an imaging method, the purpose of which is to reveal, over a wide range, information about a plurality of layers contained in a multilayer structure, or form an image of the revealed applicable layers. The method proposed includes: a step in which, while rotating the sample with the axis of the normal line of the sample surface as the axis of rotation, the sample is irradiated with an ion beam from a direction inclined with respect to the normal line direction, via a mask having an opening which selectively allows the passage of an ion beam and which is disposed at a position distant from the sample, thereby forming a hole with a band-shaped sloped surface that is inclined with respect to the sample surface; and a step in which a first image viewed from a direction intersecting with the sloped surface of the applicable layer is formed, on the basis of a signal obtained by irradiating, with a charged particle beam, the applicable layer contained in the band-shaped sloped surface.

A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric-field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy greater than 500 keV.

The invention relates to a method for processing a substrate with a focussed particle beam which incidents on the substrate, the method comprising the steps of: (a) generating at least one reference mark on the substrate using the focused particle beam and at least one processing gas, (b) determining a reference position of the at least one reference mark, (c) processing the substrate using the reference position of the reference mark, and (d) removing the at least one reference mark from the substrate.

Methods and systems for creating TEM lamella using image restoration algorithms for low keV FIB images are disclosed. An example method includes irradiating a sample with an ion beam at low keV settings, generating a low keV ion beam image of the sample based on emissions resultant from irradiation by the ion beam, and then applying an image restoration model to the low keV ion beam image of the sample to generate a restored image. The sample is then localized within the restored image, and a low keV milling of the sample is performed with the ion beam based on the localized sample within the restored image.

A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric-field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy greater than 500 keV.

This invention pertains to an imaging method, the purpose of which is to reveal, over a wide range, information about a plurality of layers contained in a multilayer structure, or form an image of the revealed applicable layers. The method proposed includes: a step in which, while rotating the sample with the axis of the normal line of the sample surface as the axis of rotation, the sample is irradiated with an ion beam from a direction inclined with respect to the normal line direction, via a mask having an opening which selectively allows the passage of an ion beam and which is disposed at a position distant from the sample, thereby forming a hole with a band-shaped sloped surface that is inclined with respect to the sample surface; and a step in which a first image viewed from a direction intersecting with the sloped surface of the applicable layer is formed, on the basis of a signal obtained by irradiating, with a charged particle beam, the applicable layer contained in the band-shaped sloped surface.

The present application discloses a scanning electron microscopic direct-write lithography system based on a compliant nano servo motion system, which includes an electron chamber, an ion chamber, a specimen chamber and a control system, wherein the electron chamber includes an electron chamber housing, an electron gun, an anode, an electron beam blanker, an electromagnetic lens and an electron beam deflection coil, the ion chamber includes an ion chamber housing, an ion source, an ion beam-scanning deflection electrode and the like, the specimen chamber includes a specimen chamber housing, a secondary electron detector, a nanoscale-precision compliant servo motion stage system and the like; control system includes a computer, an electron beam scanning controller, an ion beam scanning controller and the like. An electron beam generated by the electron chamber and an ion beam generated by the ion chamber can each perform the nano direct-write fabrication, and the nanoscale-precision compliant motion stage in the specimen chamber can perform synchronized motions with the electron beam/ion beam, thereby, stitching errors are prevented from occurring in the direct-write fabrication, and thus nano direct-write lithographic fabrication can be implemented on a large area without a stitching error. In addition, the system is capable of performing an in-situ inspection during the fabrication process, thereby facilitating the real-time observation on the result of the fabrication.

A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam configured to hit the target.

Methods and systems for creating TEM lamella using image restoration algorithms for low keV FIB images are disclosed. An example method includes irradiating a sample with an ion beam at low keV settings, generating a low keV ion beam image of the sample based on emissions resultant from irradiation by the ion beam, and then applying an image restoration model to the low keV ion beam image of the sample to generate a restored image. The sample is then localized within the restored image, and a low keV milling of the sample is performed with the ion beam based on the localized sample within the restored image.