H01J2237/31747

Tomography-assisted TEM prep with requested intervention automation workflow
11004651 · 2021-05-11 · ·

Provided is a process for lamella thinning and endpointing that substitutes a series of automated small angle tilts for the motions in the conventional endpointing sequence. STEM images or through-surface BSE scans are acquired at each tilt. The results are analyzed automatically to determine feature depths, and an intervention request is made requesting a user decision based on marked-up images and summary information displayed.

TOMOGRAPHY-ASSISTED TEM PREP WITH REQUESTED INTERVENTION AUTOMATION WORKFLOW
20200027692 · 2020-01-23 · ·

Provided is a process for lamella thinning and endpointing that substitutes a series of automated small angle tilts for the motions in the conventional endpointing sequence. STEM images or through-surface BSE scans are acquired at each tilt. The results are analyzed automatically to determine feature depths, and an intervention request is made requesting a user decision based on marked-up images and summary information displayed.

Method and apparatus for transmission electron microscopy

The disclosure is related to a method and apparatus for transmission electron microscopy wherein a TEM specimen is subjected to at least one thinning step by scratching at least an area of the specimen with an SPM probe, and wherein the thinned area is subjected to an SPM acquisition step, using the same SPM probe or another probe.

Method for sample orientation for TEM lamella preparation

A substrate is alignable for ion beam milling or other inspection or processing by obtaining an electron channeling pattern (ECP) or other electron beam backscatter pattern from the substrate based on electron beam backscatter from the substrate. The ECP is a function of substrate crystal orientation and tilt angles associated with ECP pattern values at or near a maximum, minimum, or midpoint are used to determine substrate tilt. Such tilt is then compensated or eliminated using a tilt stage coupled the substrate, or by adjusting an ion beam axis. In typical examples, circuit substrate chunks are aligned for ion beam milling to reveal circuit features for evaluation of circuit processing.

Tomography-assisted TEM prep with requested intervention automation workflow
10453646 · 2019-10-22 · ·

Provided is a process for lamella thinning and endpointing that substitutes a series of automated small angle tilts for the motions in the conventional endpointing sequence. STEM images or through-surface BSE scans are acquired at each tilt. The results are analyzed automatically to determine feature depths, and an intervention request is made requesting a user decision based on marked-up images and summary information displayed.

Bulk nanofabrication with single atomic plane precision via atomic-level sculpting of crystalline oxides

A method for sculpting crystalline oxide structures for bulk nanofabrication is provided. The method includes the controlled electron beam induced irradiation of amorphous and liquid phase precursor solutions using a scanning transmission electron microscope. The atomically focused electron beam includes operating parameters (e.g., location, dwell time, raster speed) that are selected to provide a higher electron dose in patterned areas and a lower electron dose in non-patterned areas. Concurrently with the epitaxial growth of crystalline features, the present method includes scanning the substrate to provide information on the size of the crystalline features with atomic resolution. This approach provides for atomic level sculpting of crystalline oxide materials from a metastable amorphous precursor and the liquid phase patterning of nanocrystals.

METHOD FOR SAMPLE ORIENTATION FOR TEM LAMELLA PREPARATION

A substrate is alignable for ion beam milling or other inspection or processing by obtaining an electron channeling pattern (ECP) or other electron beam backscatter pattern from the substrate based on electron beam backscatter from the substrate. The ECP is a function of substrate crystal orientation and tilt angles associated with ECP pattern values at or near a maximum, minimum, or midpoint are used to determine substrate tilt. Such tilt is then compensated or eliminated using a tilt stage coupled the substrate, or by adjusting an ion beam axis. In typical examples, circuit substrate chunks are aligned for ion beam milling to reveal circuit features for evaluation of circuit processing.

TOMOGRAPHY-ASSISTED TEM PREP WITH REQUESTED INTERVENTION AUTOMATION WORKFLOW
20190139735 · 2019-05-09 · ·

Provided is a process for lamella thinning and endpointing that substitutes a series of automated small angle tilts for the motions in the conventional endpointing sequence. STEM images or through-surface BSE scans are acquired at each tilt. The results are analyzed automatically to determine feature depths, and an intervention request is made requesting a user decision based on marked-up images and summary information displayed.

METHOD AND APPARATUS FOR TRANSMISSION ELECTRON MICROSCOPY
20180240642 · 2018-08-23 · ·

The disclosure is related to a method and apparatus for transmission electron microscopy wherein a TEM specimen is subjected to at least one thinning step by scratching at least an area of the specimen with an SPM probe, and wherein the thinned area is subjected to an SPM acquisition step, using the same SPM probe or another probe.

BULK NANOFABRICATION WITH SINGLE ATOMIC PLANE PRECISION VIA ATOMIC-LEVEL SCULPTING OF CRYSTALLINE OXIDES

A method for sculpting crystalline oxide structures for bulk nanofabrication is provided. The method includes the controlled electron beam induced irradiation of amorphous and liquid phase precursor solutions using a scanning transmission electron microscope. The atomically focused electron beam includes operating parameters (e.g., location, dwell time, raster speed) that are selected to provide a higher electron dose in patterned areas and a lower electron dose in non-patterned areas. Concurrently with the epitaxial growth of crystalline features, the present method includes scanning the substrate to provide information on the size of the crystalline features with atomic resolution. This approach provides for atomic level sculpting of crystalline oxide materials from a metastable amorphous precursor and the liquid phase patterning of nanocrystals.