According to one embodiment, a pattern formation method includes placing an imprint resist film on a substrate, then imprinting a pattern in the imprint resist film. The pattern has a first loop section in a first end portion and a second loop section in a second end portion. After the imprint resist film has been patterned, it is selectively irradiated between the first loop section and the second loop section. The imprint resist film is then etched under conditions leaving the selectively irradiated portion of the imprint resist film and removing the unirradiated portion of the imprint resist film.

A projection exposure apparatus (10) for microlithography has a plurality of optical components (M1-M6) forming an exposure beam path, as well as a distance measurement system (30, 130, 230) configured to measure a distance between at least one of the optical components and a reference element (40, 140, 240). The distance measurement system comprises a frequency comb generator (32, 132, 232), which is configured to generate electromagnetic radiation (36, 236) having a comb-shaped frequency spectrum.

A method for projecting a particle beam onto a substrate, the method includes a step of calculating a correction of the scattering effects of the beam by means of a point spread function modelling the forward scattering effects of the particles; a step of modifying a dose profile of the beam, implementing the correction thus calculated; and a step of projecting the beam, the dose profile of which has been modified, onto the substrate, and being wherein the point spread function is, or comprises by way of expression of a linear combination, a two-dimensional double sigmoid function. A method to e-beam lithography is also provided.

According to one embodiment, a pattern formation method includes placing an imprint resist film on a substrate, then imprinting a pattern in the imprint resist film. The pattern has a first loop section in a first end portion and a second loop section in a second end portion. After the imprint resist film has been patterned, it is selectively irradiated between the first loop section and the second loop section. The imprint resist film is then etched under conditions leaving the selectively irradiated portion of the imprint resist film and removing the unirradiated portion of the imprint resist film.

A method for projecting a particle beam onto a substrate, the method includes a step of calculating a correction of the scattering effects of the beam by means of a point spread function modelling the forward scattering effects of the particles; a step of modifying a dose profile of the beam, implementing the correction thus calculated; and a step of projecting the beam, the dose profile of which has been modified, onto the substrate, and being wherein the point spread function is, or comprises by way of expression of a linear combination, a two-dimensional double sigmoid function. A method to e-beam lithography is also provided.

An e-beam lithography process includes the following steps: implanting into a substrate, or into a dielectric layer deposited on the surface of the substrate, electrons in a first pattern; depositing an e-beam resist on the surface of the substrate or of the sacrificial dielectric layer; and exposing the resist by means of an electron beam in a second pattern, then developing the resist; the first and second patterns being made up of elementary patterns, the elementary patterns of the first pattern at least partially surrounding the elementary patterns of the second pattern.

The invention proposes adjusting the optical imaging system of a charged-particle multi-beam processing apparatus with regard to spatial and angular image distortion of the beam field, which describes the deviation of landing positions and landing angles of beamlets from respective nominal values within the beam field. Starting from a determination of the image distortion, so-called fingerprints are determined, which represent the change of image distortion effected by a unit change of a respective operating parameter of a component of the projection optics; then values of operating parameters are obtained which optimize a corrected distortion obtained from a superposition of the image distortion and a change of operating parameters that causes a variation of the image distortion, as expressed by a linear combination of said fingerprints. The optimizing values thus obtained are applied to the respective optical elements of the projection optics. The procedure may suitable be iterated until the distortion is suitably optimized.

In one embodiment, a BAA apparatus 204 includes apertures 3, each of which being provided to blank charged particle beams 20. The apparatus 204 further includes first electrodes 6a, second electrodes 6b, first via plugs 5a, second via plugs 5c, drivers 2 and comparison circuitries 7 that are provided for each aperture 3, wherein a first electrode 6a and a second electrode 6b are opposite to each other, first and second via plug 5a and 5c are electrically connected to the first electrode 6a, a driver 2 supplies a driving signal to the first electrode 6a via the first via plug 5a, and a comparison circuitry 7 is provided to correspond to the first electrode 6a and compares the driving signal and a signal obtained from the second via 5c plug to output a comparison result signal indicating a result of the comparison.

Fiber feedthrough device (50), for forming a hermetic seal around optical fibers in a flat fiber group (60) with a group width. The device comprises a slotted member and a base (62). The base defines a hole (65) that extends entirely through the base along a feedthrough direction (X), and is adapted to accommodate the slotted member. The slotted member (52) defines first and second surfaces (53) on opposite sides associated with the feedthrough direction, and a side surface (55, 56) facing transverse to the feedthrough direction. The slotted member comprises a slot (58), which extends along the feedthrough direction through the slotted member, and opens into the first and second surfaces and into a longitudinal opening (59) along the side surface. The slot extends transversely into the slotted member up to a slot depth at least equal to the fiber group width.

Fiber feedthrough device (50), for forming a hermetic seal around optical fibers in a flat fiber group (60) with a group width. The device comprises a slotted member and a base (62). The base defines a hole (65) that extends entirely through the base along a feedthrough direction (X), and is adapted to accommodate the slotted member. The slotted member (52) defines first and second surfaces (53) on opposite sides associated with the feedthrough direction, and a side surface (55, 56) facing transverse to the feedthrough direction. The slotted member comprises a slot (58), which extends along the feedthrough direction through the slotted member, and opens into the first and second surfaces and into a longitudinal opening (59) along the side surface. The slot extends transversely into the slotted member up to a slot depth at least equal to the fiber group width.