In the present invention, at the time of measuring, using a CD-SEM, a length of a resist that shrinks when irradiated with an electron beam, in order to highly accurately estimate a shape and dimensions of the resist before shrink, a shrink database with respect to various patterns is previously prepared, said shrink database containing cross-sectional shape data obtained prior to electron beam irradiation, a cross-sectional shape data group and a CD-SEM image data group, which are obtained under various electron beam irradiation conditions, and models based on such data and data groups, and a CD-SEM image of a resist pattern to be measured is obtained (S102), then, the CD-SEM image and data in the shrink database are compared with each other (S103), and the shape and dimensions of the pattern before the shrink are estimated and outputted (S104).

A pattern writing method for charged-particle lithography apparatuses using an improved correction for thermal distortion of the substrate includes determining an exposure position where the beam impinges on the substrate and the power of the beam at the exposure position; calculating heating of the substrate at the exposure position, and calculating, for a plurality of locations over the substrate, and the thermal diffusion and radiative cooling; calculating, for the same or a reduced plurality of locations on the substrate, the positional change of the substrate due to thermal expansion; determining a displacement distance which compensates the positional change at the exposure position, updating the structure to be written by shifting the exposure position of the beam by said displacement distance, and writing the updated structures on the substrate with the beam. These steps are repeated as a function of time and/or varying exposure position of the beam substrate position.

Methods and systems for direct lithographic pattern definition based upon electron beam induced alteration of the surface chemistry of a substrate are described. The methods involve an initial chemical treatment for global definition of a specified surface chemistry (SC). Electron beam induced surface reactions between a gaseous precursor and the surface are then used to locally alter the SC. High resolution patterning of stable, specified surface chemistries upon a substrate can thus be achieved. The defined patterns can then be utilized for selective material deposition via methods which exploit the specificity of certain SC combinations or by differences in surface energy. It is possible to perform all steps in-situ without breaking vacuum.

The present invention relates to methods of electron beam lithography using ice resist to fabricate nanostructures on a substrate and, more particularly, to a method of fabricating desired three-dimensional nanostructures on a substrate. The method involves two main strategies: grayscale ice lithography and stacking layered structures. Moreover, these two strategies can be combined in one fabrication process to produce more complex 3D nanostructures.

Methods and systems for direct lithographic pattern definition based upon electron beam induced alteration of the surface chemistry of a substrate are described. The methods involve an initial chemical treatment for global definition of a specified surface chemistry (SC). Electron beam induced surface reactions between a gaseous precursor and the surface are then used to locally alter the SC. High resolution patterning of stable, specified surface chemistries upon a substrate can thus be achieved. The defined patterns can then be utilized for selective material deposition via methods which exploit the specificity of certain SC combinations or by differences in surface energy. It is possible to perform all steps in-situ without breaking vacuum.

Methods and systems for direct lithographic pattern definition based upon electron beam induced alteration of the surface chemistry of a substrate are described. The methods involve an initial chemical treatment for global definition of a specified surface chemistry (SC). Electron beam induced surface reactions between a gaseous precursor and the surface are then used to locally alter the SC. High resolution patterning of stable, specified surface chemistries upon a substrate can thus be achieved. The defined patterns can then be utilized for selective material deposition via methods which exploit the specificity of certain SC combinations or by differences in surface energy. It is possible to perform all steps in-situ without breaking vacuum.

A conductive contact point pin includes a pin body, and a plurality of convex portions formed in a tip portion of the pin body, wherein the conductive contact point pin breaks, by pressing a substrate where a film to be broken is formed on a conductive film from above the film to be broken, the film to be broken in order to be electrically connected to the conductive film.

A method for nanometre etching or printing using an electron beam in a humid environment, which belongs to the field of electronic exposure. The method comprises: first, attaching a solution, humid atmosphere or humid environment curing layer to the surface of a substrate required to be etched and printed; then placing same in an electron beam exposure device to conduct electron beam exposure, so that a required nanometre micromachining pattern can be etched and printed on the substrate. The humid environment solution used in the method is mostly deionized water, solution containing metal ions, complex or other environment-friendly solutions. In this method, a nanoscale micromachining finished product can be obtained after electron beam exposure without chemical components such as photoresist, etc. required in the traditional electron beam etching or printing process and complicated machining processes such as fixation, rinsing, etching, gold-plating, etc. Moreover, the electron beam exposure rate is fast, the line width of electron beam photoetching or printing is uniform, and the size of the line width is the same as that of the electron beam. Therefore, the production efficiency can be greatly increased, thereby reducing nanoscale micromachining production costs.

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA is a non-universal cutter.

A conductive contact point pin includes a pin body, and a plurality of convex portions formed in a tip portion of the pin body, wherein the conductive contact point pin breaks, by pressing a substrate where a film to be broken is formed on a conductive film from above the film to be broken, the film to be broken in order to be electrically connected to the conductive film.