A Register Transfer Level (RTL) representation is recovered from a netlist representing an integrated circuit (IC). The netlist is converted to a graph comprising nodes belonging to a set of node types and edges connecting the nodes. The set of node types includes an instance node type representing an electronic component and a wire node type representing signal transfer between components. The graph is converted to a standardized graph by replacing subgraphs of the graph with standardized subgraphs. An RTL representation of the standardized graph is generated by operations including building signal declarations in a hardware description language (HDL) from the wire nodes of the standardized graph and building signal assignments in the HDL from instance nodes of the standardized graph.

Provided is an assembly for inspecting the surface of a sample. The assembly includes two or more multi-beam electron column units. Each unit has: a single thermal field emitter for emitting a diverging electron beam towards a beam splitter; wherein the beam splitter includes a first multi-aperture plate having multiple apertures for creating multiple primary electron beams; a collimator lens for collimating the diverging electron beam from the emitter; an objective lens unit for focusing said multiple primary electron beams on said sample; and a multi-sensor detector system for separately detecting the intensity of secondary electron beams created by each one of said focused primary electron beams on said sample. The two or more multi-beam electron column units are arranged adjacent to each other for inspecting different parts of the surface of the sample at the same time.

A includes arranging a substrate in a working region of a first particle beam column and a second particle beam column; producing a desired target structure on the substrate by directing a first particle beam generated by the first particle beam column at a multiplicity of sites of the substrate to deposit material thereon or to remove material therefrom;

repeatedly interrupting the production of the desired target structure and producing a marking on the substrate by directing the first particle beam onto the substrate and continuing the production of the desired target structure; and capturing positions of the markings on the substrate by directing a second particle beam produced by the second particle beam column onto the markings on the substrate, and detecting particles or radiation which are produced in the process by the second particle beam on the substrate.

In one embodiment, a multi charged particle beam evaluation method includes writing a plurality of evaluation patterns on a substrate by using multi charged particle beams, with a design value of a line width changed by a predetermined change amount at a predetermined pitch, measuring the line widths of the plurality of evaluation patterns thus written, and extracting a variation in a specific period of a distribution of differences between results of a measurement value and the design value of each of the line widths of the plurality of evaluation patterns. The predetermined change amount is equal to or larger than data resolution and smaller than a size of each of pixels, each of which is a unit region to be irradiated with one of the multi charged particle beams.

A Register Transfer Level (RTL) representation is recovered from a netlist representing an integrated circuit (IC). The netlist is converted to a graph comprising nodes belonging to a set of node types and edges connecting the nodes. The set of node types includes an instance node type representing an electronic component and a wire node type representing signal transfer between components. The graph is converted to a standardized graph by replacing subgraphs of the graph with standardized subgraphs. An RTL representation of the standardized graph is generated by operations including building signal declarations in a hardware description language (HDL) from the wire nodes of the standardized graph and building signal assignments in the HDL from instance nodes of the standardized graph.

An anomaly determination method of the present embodiment includes: measuring a first resistance value of a processing target via a first grounding member when the first grounding member is attached to the processing target in a first chamber; bringing the first grounding member into contact with a grounded second grounding member to measure a second resistance value of the processing target via the first and second grounding members in a second chamber; and determining an anomaly of the second grounding member with an arithmetic processing unit based on a trend of a resistance difference between the first resistance value and the second resistance value for a plurality of processing targets.

A Register Transfer Level (RTL) representation is recovered from a netlist representing an integrated circuit (IC). The netlist is converted to a graph comprising nodes belonging to a set of node types and edges connecting the nodes. The set of node types includes an instance node type representing an electronic component and a wire node type representing signal transfer between components. The graph is converted to a standardized graph by replacing subgraphs of the graph with standardized subgraphs. An RTL representation of the standardized graph is generated by operations including building signal declarations in a hardware description language (HDL) from the wire nodes of the standardized graph and building signal assignments in the HDL from instance nodes of the standardized graph.

A Register Transfer Level (RTL) representation is recovered from a netlist representing an integrated circuit (IC). The netlist is converted to a graph comprising nodes belonging to a set of node types and edges connecting the nodes. The set of node types includes an instance node type representing an electronic component and a wire node type representing signal transfer between components. The graph is converted to a standardized graph by replacing subgraphs of the graph with standardized subgraphs. An RTL representation of the standardized graph is generated by operations including building signal declarations in a hardware description language (HDL) from the wire nodes of the standardized graph and building signal assignments in the HDL from instance nodes of the standardized graph.

The purpose of the present invention is to provide a charged particle beam device with which it is possible to identify, to a high degree of accuracy, repeat patterns generated by a multiple exposure method such as SADP or SAQP. In order to achieve this purpose, there is proposed a charged particle beam device for: irradiating a first position on a sample with a charged particle beam to form an irradiation mark on the sample; after the formation of the irradiation mark, scanning the charged particle beam on a first visual field which includes the first position and which is larger than the irradiation mark, and thereby acquiring a first image; scanning the charged particle beam on a second visual field which includes the first position, which is larger than the irradiation mark, and which is in a different position from the first visual field, thereby acquiring a second image; and synthesizing the first image and the second image so as to overlap the irradiation marks included in the first image and the second image.

A wafer topography measurement system can be paired with a scanning electron microscope. A topography threshold can be applied to wafer topography data about the wafer, which was obtained with the wafer topography measurement system. A metrology sampling plan can be generated for the wafer. This metrology sampling plan can include locations in the wafer topography data above the topography threshold. The scanning electron microscope can scan the wafer using the metrology sampling plan and identify defects.