The present invention relates to a composition for atopy or psoriasis treatment comprising a plasma-treated liquid material. More particularly, the present invention relates to a method for producing a plasma-treated liquid material for preventing or treating atopic dermatitis or psoriasis, a pharmaceutical composition for preventing or treating a topic dermatitis or psoriasis using a plasma-treated liquid material produced according to the method, and a method for preventing or treating atopic dermatitis or psoriasis using the plasma-treated liquid material.

A liquid treatment apparatus includes a water pump and a plasma jet generating device. A liquid inlet of the water pump is immersed in a liquid. A liquid outlet of the water pump is configured to eject the liquid from the liquid inlet out of the water pump without artificial bubbles in the liquid. A gas inlet of the plasma jet generating device is configured to be located out of the liquid. A pair of electrodes of the plasma jet generating device is configured to generate plasma jet by the gas from the gas inlet. The plasma jet outlet is configured to be immersed in the liquid and in proximity to the liquid outlet of the water pump so that the gas is automatically entrained into the gas inlet of the plasma jet generating device when the liquid is ejected out from the liquid outlet.

Exemplary substrate processing systems may include a lid plate. The systems may include a gas splitter seated on the lid plate. The gas splitter may include a top surface and side surfaces. The gas splitter may define a first and second gas inlets, with each gas inlet extending through one side surface. The gas splitter may define first and second gas outlets extending through the top surface. The gas splitter may define first and second gas lumens that extend between and fluidly couple each gas inlet with corresponding gas outlets. The gas splitter may define mixing channels that include a mixing outlet extending through a side surface and a mixing inlet extending through the top surface. The systems may include output manifolds seated on the lid plate. The systems may include output weldments that fluidly couple each mixing outlet with a respective one of the output manifolds.

Using electrostatic means, such as plasma, webs can be cut, and webs can be bonded together. A plasma is created and directed at an intervening poly or a nonwoven to sever the fabric, either continuously or intermittently, or to bond and sever two more material layers together.

A liquid treatment apparatus includes a water pump and a plasma jet generating device. A liquid inlet of the water pump is immersed in a liquid. A liquid outlet of the water pump is configured to eject the liquid from the liquid inlet out of the water pump without artificial bubbles in the liquid. A gas inlet of the plasma jet generating device is configured to be located out of the liquid. A pair of electrodes of the plasma jet generating device is configured to generate plasma jet by the gas from the gas inlet. The plasma jet outlet is configured to be immersed in the liquid and in proximity to the liquid outlet of the water pump so that the gas is automatically entrained into the gas inlet of the plasma jet generating device when the liquid is ejected out from the liquid outlet.

A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises a coil disposed within a conductive plate, which may comprise nested conductive rings. The coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.

Provided are apparatuses for manufacturing semiconductor devices. An apparatus includes a reaction chamber having a stage to be loaded on a substrate, wherein set plasma is formed over the stage, a plurality of gas supply lines connected to the reaction chamber, flow controllers formed on the plurality of gas supply lines, respectively, to control the amount of a gas supplied to the reaction chamber, and a gas splitter configured to supply a mixed gas to the flow controllers. The apparatus may be a thin film deposition apparatus using plasma and further include a flow control unit connected to the gas splitter and a gas supply source connected to the flow control unit.

Examples of a substrate processing apparatus include a signal transmitter that outputs a command signal, and an RF generator that receives the command signal, starts to output traveling wave power simultaneously with a first transition of the command signal, measures a delay time, which is a time period after the first transition of the command signal until a predetermined power-applied state is achieved on a receiving side of the traveling wave power, and stops outputting the traveling wave power when the delay time elapses after a second transition of the command signal.

A microwave energy source that generates a microwave energy is disclosed. The microwave energy source has an on-state and an off-state. A control circuit is coupled to the microwave energy source and includes an output to generate a control signal that adjusts a pulse frequency of the microwave energy. A voltage generator applies a non-zero voltage to the microwave energy source during the off-state. A frequency and a duty cycle of the non-zero voltage is based on a frequency and a duty cycle of the control signal. A waveguide is coupled to the microwave energy source. The waveguide has a supply gas inlet that receives a supply gas, a reaction zone that generates a plasma, a process inlet that injects a raw material into the reaction zone, and an outlet that outputs a powder based on a mixture of the supply gas and the raw material within the plasma.

A discharge electrode E in an electrode chamber C is formed of a pair of electrode members 8 and 9 having lengths equal to or greater than a width of a film F. Also, the pair of electrode members 8 and 9 are disposed facing each other so as to sandwich a support member 4 there-between, which has nearly the same length as to electrode members; a gap is formed in a section in which the pair of electrode members 8 and 9 face each other; and this gap is open at a tip of the discharge electrode so as to serve as a gas pathway 15. Meanwhile, in the aforementioned support member 4, a plurality of gas guiding holes 5 are formed in a longitudinal direction thereof, and the gas guiding holes are in communication with a gas supplying system.