Disclosed are systems and methods for generating a beam of charged particles, such as an ion beam. Such a system may comprise an interaction chamber configured to support a target, one or more electromagnetic radiation sources, a sensor, and at least one processor. The one or more electromagnetic radiation sources may be configured to provide a probe beam at a first energy for determining orientation data of the target and a particle-generating beam at a second energy, which is greater than the first energy, for producing a beam of charged particles. The processor may be configured to receive feedback information from the sensor and to cause a change in a relative orientation between the particle-generating beam and the target.

A method for processing a substrate that includes: applying, at an ionizer, a drive pulse train to an ion source to ionize a gas cluster beam and transfer the drive pulse train to the gas cluster beam; measuring, at a detector exposed to the gas cluster beam, a beam current synchronously with the drive pulse train; obtaining time-of-flight information of the clusters and the monomers in the gas cluster beam based on the beam current and the drive pulse train; determining size information relating to a size distribution of clusters and monomers in the gas cluster ion beam based on the time-of-flight information; adjusting a process parameter of the gas cluster beam based on the size information; and exposing the substrate to the gas cluster beam with the adjusted process parameter.

Nanoclusters are produced in a gas phase using a nanocluster manufacturing section including: a vacuum container; a sputtering source that has a target as a cathode, performs magnetron sputtering by pulse discharge, and generates plasma; a pulse power source that supplies pulsed power to the sputtering source; a first inert gas supply section that supplies a first inert gas to the sputtering source; a nanocluster growth cell that is contained in the vacuum container; and a second inert gas introduction section that introduces a second inert gas into the nanocluster growth cell. A multitude of supports are rolled in the gas phase and each of the supports is sprinkled with a multitude of nanoclusters to cause each support to support the multitude of nanoclusters.

A beam processing system and method of operating are described. In particular, the beam processing system includes a beam source having a nozzle assembly that is configured to introduce a primary gas through the nozzle assembly to a vacuum vessel in order to produce a gaseous beam, such as a gas cluster beam, and optionally, an ionizer positioned downstream from the nozzle assembly, and configured to ionize the gaseous beam to produce an ionized gaseous beam. The beam processing system further includes a process chamber within which a substrate is positioned for treatment by the gaseous beam, and a secondary gas source, wherein the secondary gas source includes a secondary gas supply system that delivers a secondary gas, and a secondary gas controller that operatively controls the flow of the secondary gas injected into the beam processing system downstream of the nozzle assembly.

Disclosed are systems and methods for generating a beam of charged particles, such as an ion beam. Such a system may comprise an interaction chamber configured to support a target, one or more electromagnetic radiation sources, a sensor, and at least one processor. The one or more electromagnetic radiation sources may be configured to provide a probe beam at a first energy for determining orientation data of the target and a particle-generating beam at a second energy, which is greater than the first energy, for producing a beam of charged particles. The processor may be configured to receive feedback information from the sensor and to cause a change in a relative orientation between the particle-generating beam and the target.

A foil liner comprising a plurality of foil layers is disclosed. The foil layers may each be an electrically conductive material that are stacked on top of each other. The spacing between adjacent foil layers may create a thermal gradient such that the temperature of the plasma is hotter than the temperature of the ion source chamber. In other embodiments, the foil layers may be assembly to sink the heat from the plasma so that the plasma is cooler than the temperature of the ion source chamber. In some embodiments, gaps or protrusions are disposed on one or more of the foil layers to affect the thermal gradient. In certain embodiments, one or more of the foil layers may be constructed of an insulating material to further affect the thermal gradient. The foil liner may be easily assembled, installed and replaced from within the ion source chamber.

A foil liner comprising a plurality of foil layers is disclosed. The foil layers may each be an electrically conductive material that are stacked on top of each other. The spacing between adjacent foil layers may create a thermal gradient such that the temperature of the plasma is hotter than the temperature of the ion source chamber. In other embodiments, the foil layers may be assembly to sink the heat from the plasma so that the plasma is cooler than the temperature of the ion source chamber. In some embodiments, gaps or protrusions are disposed on one or more of the foil layers to affect the thermal gradient. In certain embodiments, one or more of the foil layers may be constructed of an insulating material to further affect the thermal gradient. The foil liner may be easily assembled, installed and replaced from within the ion source chamber.

A method of smoothing a solid surface with a gas cluster ion beam includes irradiating the solid surface with the gas cluster ion beam. The irradiating includes, when scratches which can be likened to a line-and-space pattern structure with widths and heights on the order of a submicrometer to micrometer are present on the solid surface, a process of emitting the gas cluster ion beam so as to expose substances, which remain on side-walls of the scratches due to lateral transferal caused by collisions with gas clusters, to other gas clusters, and the gas cluster ion beam diverges non-concentrically and/or non-uniformly.

Nanoclusters are produced in a gas phase using a nanocluster manufacturing section including: a vacuum container; a sputtering source that has a target as a cathode, performs magnetron sputtering by pulse discharge, and generates plasma; a pulse power source that supplies pulsed power to the sputtering source; a first inert gas supply section that supplies a first inert gas to the sputtering source; a nanocluster growth cell that is contained in the vacuum container; and a second inert gas introduction section that introduces a second inert gas into the nanocluster growth cell. A multitude of supports are rolled in the gas phase and each of the supports is sprinkled with a multitude of nanoclusters to cause each support to support the multitude of nanoclusters.