To provide an ion milling apparatus adapted to suppress the contamination of a beam forming electrode. The ion milling apparatus includes: an ion gun containing therein a beam forming electrode for forming an ion beam; a specimen holder for fixing a specimen to be processed by irradiation of an ion beam; a mask for shielding a part of the specimen from the ion beam; and an ion gun controller for controlling the ion gun.

To provide an ion gun of a penning discharge type capable of narrowing a beam with a low ion beam current at a low acceleration voltage, an ion milling device including the same, and an ion milling method.

An ion milling device that controls half width of a beam profile of an ion beam with which a sample is irradiated from an ion gun to be in a range of 200 μm to 350 μm. The device includes: the ion gun that ionizes a gas supplied from the outside, and emits an ion beam; a gas-flow-rate varying unit that varies a flow rate of the gas supplied to the ion gun; and a current measurement unit that measures a current value of the ion beam emitted from the ion gun. The gas-flow-rate varying unit sets a gas flow rate to be higher than a gas flow rate at which the ion beam current has a maximum value based on the current value measured by the current measurement unit and the flow rate of the gas determined by the gas-flow-rate varying unit.

To provide an ion gun of a penning discharge type capable of achieving a milling rate which is remarkably higher than that in the related art, an ion milling device including the same, and an ion milling method.

An ion generation unit includes a cathode that emits electrons, an anode that is provided within the ion generation unit and has an inner diameter of 5.2 mm or less, and magnetic-field generation means using a permanent magnet of which a maximum energy product ranges from 110 kJ/m.sup.3 to 191 kJ/m.sup.3.

To provide an ion gun of a penning discharge type capable of achieving a milling rate which is remarkably higher than that in the related art, an ion milling device including the same, and an ion milling method.

An ion generation unit includes a cathode that emits electrons, an anode that is provided within the ion generation unit and has an inner diameter of 5.2 mm or less, and magnetic-field generation means using a permanent magnet of which a maximum energy product ranges from 110 kJ/m.sup.3 to 191 kJ/m.sup.3.

An ion generation apparatus according to the present invention includes an electron emission device, an opposite electrode, and a controller, the electron emission device includes a lower electrode, a surface electrode, and an intermediate layer provided between the lower electrode and the surface electrode, the opposite electrode is provided to be opposite to the surface electrode, and the controller is provided to apply a voltage to the surface electrode, the lower electrode, or the opposite electrode such that a potential of the surface electrode becomes higher than a potential of the lower electrode and a potential of the opposite electrode in a positive ion mode.

A sputter-ion-pump system includes a sputter ion pump and an electronic drive. The electronic drive supplies a voltage across the ion pump to establish, in cooperation with a magnetic field, a Penning trap within the ion pump. A current sensor measures the Penning-trap current across the Penning trap. The Penning trap is used as an indication of pressure within the ion pump or a vacuum chamber including or in fluid communication with the ion pump. The pressure information can be used to determine flow rates, e.g., due to a load, outgassing, and/or leakage from an ambient.

A sputter-ion-pump system includes a sputter ion pump and an electronic drive. The electronic drive supplies a voltage across the ion pump to establish, in cooperation with a magnetic field, a Penning trap within the ion pump. A current sensor measures the Penning-trap current across the Penning trap. The Penning trap is used as an indication of pressure within the ion pump or a vacuum chamber including or in fluid communication with the ion pump. The pressure information can be used to determine flow rates, e.g., due to a load, outgassing, and/or leakage from an ambient.

Provided is an ion gun that is capable of obtaining a higher plasma efficiency. This ion gun comprises: a first cathode 21 that is formed in a disc shape; a second cathode 12 that is formed in a disc shape and has an ion beam extraction hole 101a provided thereto; a first permanent magnet 14 that is disposed between the first cathode and the second cathode, and that is formed in a cylindrical shape; an anode 23 that has a cylindrical region 35a and an extending region 25a provided to one end of the cylindrical region; and an insulating material 26 that keeps the anode electrically insulated from the first cathode, the second cathode, and the first permanent magnet, all of which are electrically connected. The cylindrical region of the anode is disposed inside the inner diametrical position of the first permanent magnet, and the extending region of the anode is disposed so as to cross over the inner diametrical position of the first permanent magnet and to face the first cathode.

A sputter-ion-pump system includes a sputter ion pump and an electronic drive. The electronic drive supplies a voltage across the ion pump to establish, in cooperation with a magnetic field, a Penning trap within the ion pump. A current sensor measures the Penning-trap current across the Penning trap. The Penning trap is used as an indication of pressure within the ion pump or a vacuum chamber including or in fluid communication with the ion pump. The pressure information can be used to determine flow rates, e.g., due to a load, outgassing, and/or leakage from an ambient.

A sputter-ion-pump system includes a sputter ion pump and an electronic drive. The electronic drive supplies a voltage across the ion pump to establish, in cooperation with a magnetic field, a Penning trap within the ion pump. A current sensor measures the Penning-trap current across the Penning trap. The Penning trap is used as an indication of pressure within the ion pump or a vacuum chamber including or in fluid communication with the ion pump. The pressure information can be used to determine flow rates, e.g., due to a load, outgassing, and/or leakage from an ambient.