An automatic adjustment method and an automatic adjustment device of a beam of a semiconductor apparatus, and a training method of a parameter adjustment model are provided. The automatic adjustment method of the beam of the semiconductor apparatus includes the following steps. The semiconductor apparatus generates the beam. A wave curve of the beam is obtained. The wave curve is segmented into several sections. The slope of each of the sections is obtained. Several environmental factors of the semiconductor apparatus are obtained. According to the slopes and the environmental factors, at least one parameter adjustment command of the semiconductor apparatus is analyzed through the parameter adjustment model.

An automatic adjustment method and an automatic adjustment device of a beam of a semiconductor apparatus, and a training method of a parameter adjustment model are provided. The automatic adjustment method of the beam of the semiconductor apparatus includes the following steps. The semiconductor apparatus generates the beam. A wave curve of the beam is obtained. The wave curve is segmented into several sections. The slope of each of the sections is obtained. Several environmental factors of the semiconductor apparatus are obtained. According to the slopes and the environmental factors, at least one parameter adjustment command of the semiconductor apparatus is analyzed through the parameter adjustment model.

A low-erosion radio frequency ion source is disclosed having a hollow body with conductive interior walls that define a cylindrical cavity, with a gas supply inlet for plasma-forming gases and a power supply inlet for injecting radio frequency energy into the cavity; an expansion chamber connected to the cavity by means of a plasma outlet hole; an ion-extraction aperture in contact with the expansion chamber; coaxial conductor disposed in the cavity, parallel to the longitudinal axis thereof, one or both ends of the coaxial conductor being in contact with a circular interior wall of the body, forming a coaxial resonant cavity; the coaxial conductor having a conductive protuberance opposite the plasma outlet hole and which extends radially into the cavity. It substantially reduces the erosion of the conductive materials.

An apparatus may include a cyclotron to receive an ion beam as an incident ion beam at an initial energy, and output the ion beam as an accelerated ion beam at an accelerated ion energy. The apparatus may further include an RF source to output an RF power signal to the cyclotron chamber, the RF power source comprising a variable power amplifier, and a movable stripper, translatable to intercept the ion beam within the cyclotron at a continuum of different positions.

An apparatus may include a cyclotron to receive an ion beam as an incident ion beam at an initial energy, and output the ion beam as an accelerated ion beam at an accelerated ion energy. The apparatus may further include an RF source to output an RF power signal to the cyclotron chamber, the RF power source comprising a variable power amplifier, and a movable stripper, translatable to intercept the ion beam within the cyclotron at a continuum of different positions.

A negative ion source includes a plasma chamber, a microwave source, a negative ion converter, a magnetic filter and a beam formation mechanism. The plasma chamber contains gas to be ionized. The microwave source transmits microwaves to the plasma chamber to ionize the gas into atomic species including hyperthermal neutral atoms. The negative ion converter converts the hyperthermal neutral atoms to negative ions. The magnetic filter reduces a temperature of electrons provided between the plasma chamber and the negative ion converter. The beam formation mechanism extracts the negative ions.

A negative ion source includes a plasma chamber, a microwave source, a negative ion converter, a magnetic filter and a beam formation mechanism. The plasma chamber contains gas to be ionized. The microwave source transmits microwaves to the plasma chamber to ionize the gas into atomic species including hyperthermal neutral atoms. The negative ion converter converts the hyperthermal neutral atoms to negative ions. The magnetic filter reduces a temperature of electrons provided between the plasma chamber and the negative ion converter. The beam formation mechanism extracts the negative ions.

The presently disclosed ion sources include one or more electromagnets for changing the distribution of plasma within a discharge space of an ion source. At least one of the electromagnets is oriented about an outer periphery of a tubular sidewall of the ion source and changes a distribution of the plasma in a peripheral region of the discharge space.

Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric plate that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.

Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric plate that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.