The present invention generally relates to a field emission light source and specifically to a miniaturized field emission light source that is possible to manufacture in large volumes at low cost using the concept of wafer level manufacturing, i.e. a similar approach as used by IC's and MEMS. The invention also relates to a lighting arrangement comprising at least one field emission light source. The field emission light source comprises: a field emission cathode (106) comprising a plurality of nanostructures (104) formed on a substrate; an electrically conductive anode structure (108) comprising a first wavelength converting material (118) arranged to cover at least a portion of the anode structure, wherein the first wavelength converting material is configured to receive electrons emitted from the field emission cathode and to emit light of a first wavelength range, and means for forming an hermetically sealed and subsequently evacuated cavity (106) between the substrate of the field emission cathode and the anode structure, including a spacer structure (302, 110) arranged to encircle the plurality of nano structures, wherein the substrate for receiving the plurality of nanostructures is a wafer (102′).

The present invention generally relates to a field emission light source and specifically to a miniaturized field emission light source that is possible to manufacture in large volumes at low cost using the concept of wafer level manufacturing, i.e., a similar approach as used by integrated circuits (IC) and microelectromechanical systems (MEMS). The invention also relates to a lighting arrangement comprising at least one field emission light source.

An ultraviolet light emitting device without the use of a p-type semiconductor layer is described. For generating ultraviolet light, an electron beam generator is provided, and an electron beam generated in the electron beam generator is guided to an active layer of an ultraviolet light generator. In the active layer, the electron beam is collided, and electron-hole pairs generated by the collisions are confined in well layers due to barrier layers of the active layer. The confined electrons and holes generate ultraviolet light through recombination.

A cathode-ray ultraviolet light source comprising: an elongated glass envelope having a first end and second end, the glass envelope defining an evacuated volume; an electron gun positioned within the evacuated volume proximate to the first end and being capable of developing an electron beam; a target disposed within the evacuated volume between the first and second end of the glass envelope, the target comprising a phosphor material covered with a reflective metal film; and an electron beam focusing and deflecting mechanism disposed within the evacuated volume between the electron gun and the target to direct the electron beam towards the reflective metal film of the target.

An ultraviolet light emitting device without the use of a p-type semiconductor layer is described. For generating ultraviolet light, an electron beam generator is provided, and an electron beam generated in the electron beam generator is guided to an active layer of an ultraviolet light generator. In the active layer, the electron beam suffers collisions, and electron-hole pairs generated by the collisions are confined in well layers due to barrier layers of the active layer. The confined electrons and holes generate ultraviolet light through recombination.

A cathode-ray ultraviolet light source comprising: an elongated glass envelope having a first end and second end, the glass envelope defining an evacuated volume; an electron gun positioned within the evacuated volume proximate to the first end and being capable of developing an electron beam; a target disposed within the evacuated volume between the first and second end of the glass envelope, the target comprising a phosphor material covered with a reflective metal film; and an electron beam focusing and deflecting mechanism disposed within the evacuated volume between the electron gun and the target to direct the electron beam towards the reflective metal film of the target.